Journal of Crystal Growth

Journal of Crystal Growth, Vol.455 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (29 articles)

1 - 5	Growth and optical properties of Pr3+ doped Na3La9O3(BO3)(8) crystal Luo XC, Shan FX, Xu TX, Zhang XY, Zhang GC, Wu YC
6 - 12	Separation behavior of impurities and selenium reduction by the reactive zone refining process using high-frequency induction heating to purify Te Shim M, Kim YM, Lee HH, Hong SJ, Lee JH
13 - 18	Formation of V-grooves in SrRuO3 epitaxial film Liu GJ, Feng HL, Liu B, Wang YQ, Liu W, Zou B, Alford NM, Petrov PK
19 - 28	Morphological stability of a solid liquid interface growing in a cylindrical mold Kato H
29 - 36	Investigation on recalescence temperatures of deeply undercooled melts Xu XL, Liu F, Hou H, Zhao YH, Gu T, Wang SY, Yan F
37 - 42	Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth Riedi S, Reichl C, Berl M, Alt L, Maier A, Wegscheider W
43 - 48	Termination of hollow core nanopipes in GaN by an AN interlayer Contreras O, Ruiz-Zepeda F, Avalos-Borja M, Dadgar A, Krost A
49 - 54	Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space Station Kinoshita K, Arai Y, Inatomi Y, Tsukada T, Miyata H, Tanaka R
55 - 59	Flux growth of MBO3 (M=Fe, Ga, In, Sc, Lu) single crystals Ovchinnikov SG, Rudenko VV
60 - 65	MOF-199: A simple strategy for improvement of crystallinity and photovoltaic property Khajavian R, Ghani K
66 - 70	Growth and magnetic properties of epitaxial Fe4N films on insulators possessing lattice spacing close to Si(001) plane Ito K, Higashikozono S, Takata F, Gushi T, Toko K, Suemasu T
71 - 75	Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond Tsubouchi N, Mokuno Y
76 - 82	Unusual growth macrolayers on {100} faces of diamond crystals from magnesium-based systems Khokhryakov AF, Nechaev DV, Palyanov YN
83 - 89	Peculiarities of strain relaxation in linearly graded InxGa1-xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy Sorokin SV, Klimko GV, Sedova IV, Sitnikova AA, Kirilenko DA, Baidakova MV, Yagovkina MA, Komissarova TA, Belyaev KG, Ivanov SV
90 - 93	Single crystal growth of bis guanidinium hydrogen phosphate monohydrate by Sankaranarayanan-Ramasamy method and investigation of its linear and nonlinear optical properties Jauhar RM, Vinitha G, Murugakoothan P
94 - 98	High pressure crystal growth of the antiperovskite centrosymmetric superconductor SrPt3P Zhigadlo ND
99 - 104	Compact seaweed growth of peritectic phase on confined, flat properitectic dendrites Ludwig A, Mogeritsch J
105 - 110	Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications Young NG, Farrell RM, Iza M, Nakamura S, DenBaars SP, Weisbuch C, Speck JS
111 - 116	Crystallisation of sodium dodecyl sulfate and the corresponding effect of 1-dodecanol addition Summerton E, Zimbitas G, Britton M, Bakalis S
117 - 121	A new perspective on structural, materials, and simulation of flow and cavitation around the propeller with energy saving system Fathololumi S, Hassanabad MG
122 - 128	Growth of Bi2Te3 films and other phases of Bi-Te system by MOVPE Kuznetsov PI, Yapaskurt VO, Shchamkhalova BS, Shcherbakov VD, Yakushcheva GG, Luzanov VA, Jitov VA
129 - 135	Two-temperature synthesis of non-linear optical compound CdGeAs2 Zhu CQ, Verozubova GA, Mironov YP, Lei ZT, Song LC, Ma TH, Okunev AO, Yang CH
136 - 142	The microstructure evolution of hydrogenated microcrystalline germanium promoted by power gradient method Wang XY, Ni J, Li C, Sun XX, Li ZL, Cai HK, Li J, Zhang JJ
143 - 151	High speed growth of SrI2 scintillator crystals by the EFG process Calvert G, Guguschev C, Burger A, Groza M, Derby JJ, Feigelson RS
152 - 156	Synthesis of ZIF-67 and ZIF-8 crystals using DMSO (Dimethyl Sulfoxide) as solvent and kinetic transformation studies Feng XH, Wu T, Carreon MA
157 - 160	Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures Tarala V, Ambartsumov M, Altakhov A, Martens V, Shevchenko M
161 - 167	Photoacoustic and dielectric spectroscopic studies of 4-dimethylamino-nmethyl-4-stilbazolium tosylate single crystal: An efficient terahertz emitter Manivannan M, Dhas SAMB, Jose M
168 - 171	MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 mu m Liu H, Wang Q, Chen J, Liu K, Ren XM
172 - 180	Structural analysis of the 3C vertical bar 4H boundaries formed on prismatic planes in 4H-SiC epitaxial films Yamashita T, Matsuhata H, Naijo T, Momose K, Osawa H