Journal of Crystal Growth

Journal of Crystal Growth, Vol.459 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (35 articles)

1 - 12	Theoretical and numerical investigation of diffusive instabilities in multi-component alloys Lahiri A, Choudhury A
13 - 16	Photoluminescence properties of MgxZn1-xO films grown by molecular beam epitaxy Wu TY, Huang YS, Hu SY, Lee YC, Tiong KK, Chang CC, Chou WC, Shen JL
17 - 22	Single crystal fiber growth of cerium doped strontium yttrate, SrY2O4:Ce3+ Philippen J, Guguschev C, Klimm D
23 - 30	Preparation of directionally solidified BaTi2O5-Ba(6)Ti(17)O40 eutectic by the floating zone method Shiga K, Katsui H, Goto T
31 - 37	Study on growth, structural, optical, thermal and mechanical properties of organic single crystal ethyl p-amino benzoate (EPAB) grown using vertical Bridgman technique Muthuraja A, Kalainathan S
38 - 42	Crystal growth kinetics of ultra-thin ZrO2 film on Si by differential scanning calorimetry Faruque SAKM, Debnath D, Giri B, Chakraborty S
43 - 49	Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length Kupers H, Bastiman F, Luna E, Somaschini C, Geelhaar L
50 - 55	Comparative study on ATR-FTIR calibration models for monitoring solution concentration in cooling crystallization Zhang FK, Liu T, Wang XZ, Liu JX, Jiang XB
56 - 60	Growth and characterization of charge carrier spatially confined SrMnO3/La0.7Sr0.3MnO3/SrMnO3 trilayers Galdi A, Sacco C, Orgiani P, Romeo F, Maritato L
61 - 66	Effect of NH4-N/P and Ca/P molar ratios on the reactive crystallization of calcium phosphates for phosphorus recovery from wastewater Vasenko L, Qu H
67 - 75	Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots Trempa M, Kupka I, Kranert C, Lehmann T, Reimann C, Friedrich J
76 - 80	Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy Li B, Xia YP, Ho WK, Xie MH
81 - 86	Chemical vapor transport and characterization of MnBi2Se4 Nowka C, Gellesch M, Borrero JEH, Partzsch S, Wuttke C, Steckel F, Hess C, Wolter AUB, Bohorquez LTC, Buchner B, Hampel S
87 - 94	Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal Abe T, Takahashi T, Shirai K
95 - 99	Orientation of Zn3P2 films via phosphidation of Zn precursors Katsube R, Nose Y
100 - 104	Synthesis and characterization of ZnO/ZnS/MoS2 core-shell nanowires Butanovs E, Kuzmin A, Butikova J, Vlassov S, Polyakov B
105 - 111	Effects of growth parameters on silicon molten zone formed by infrared convergent-heating floating zone method Hossain MM, Watauchi S, Nagao M, Tanaka I
112 - 117	Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC Frye CD, Saw CK, Padavala B, Nikolic RJ, Edgar JH
118 - 123	A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface Bomphrey JJ, Ashwin MJ, Jones TS
124 - 128	Vanadium doped Cd0.9Mn0.1Te crystal and its optical and electronic properties Luan LJ, Zhang JW, Wang T, Jie WQ, Liu ZW
129 - 134	Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C
135 - 145	Convection and macrosegregation in Al-19Cu alloy directionally solidified through an abrupt contraction in cross-section: A comparison with Al-7Si Ghods M, Lauer M, Grugel RN, Tewari SN, Poirier DR
146 - 152	Analysis of Shannon entropy for protein crystallization and prediction of crystallization pH and precipitants Perez-Priede M, Garcia-Granda S
153 - 158	Effects of solution degassing on solubility, crystal growth and dissolution - Case study: Salicylic acid in methanol Seidel J, Ulrich J
159 - 162	Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer Huang J, Niu MT, Zhang JC, Wang W, Wang JF, Xu K
163 - 166	Crystal growth and scintillation characterizations of Tl2LiYCl6: Ce3+ Rooh G, Kim HJ, Park H, Kim S
167 - 172	Shape-Evolution Control of hybrid perovskite CH3NH3PbI3 crystals via solvothermal synthesis Zhang BH, Guo FQ, Yang LH, Jia XL, Liu B, Xie ZL, Chen DJ, Lu H, Zhang R, Zheng YD
173 - 177	Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band Mickevicius J, Dobrovolskas D, Aleksiejunas R, Nomeika K, Grinys T, Kadys A, Tamulaitis G
178 - 184	Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications Zhu JB, Yin ZG, Fu Z, Zhao YJ, Zhang XW, Liu X, You JB, Li XX, Meng JH, Liu H, Wu JL
185 - 188	Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ, Houston PA
189 - 193	Concentration and composition of gas inclusions in some oxide crystals Arhipov P, Tkachenko S, Galenin E, Gerasymov I, Sidletskiy O, Kudin K, Lebbou K
194 - 197	Nucleation and initial radius of self-catalyzed III-V nanowires Dubrovskii VG, Borie S, Dagnet T, Reynes L, Andre Y, Gil E
198 - 202	Synthesis of zirconia (ZrO2) nanowires via chemical vapor deposition Baek MK, Park SJ, Choi DJ
203 - 208	Floating zone growth of alpha-Na0.90MnO2 single crystals Dally R, Clement RJ, Chisnell R, Taylor S, Butala M, Doan-Nguyen V, Balasubramanian M, Lynn JW, Grey CP, Wilson SD
209 - 214	Three-dimensional lattice matching of epitaxially embedded nanoparticles May BJ, Anderson PM, Myers RC