Journal of Crystal Growth
Journal of Crystal Growth, Vol.466 Entire volume, number list
ISSN: 0022-0248 (Print)
In this Issue (10 articles)
1 - 5 |
Development of hydroxyapatite crystallization utilizing the contact reaction of a minute droplet with atmospheric plasmas Wada Y, Kudoh K, Matsumoto M, Onoe K |
6 - 15 |
MBE growth and doping of AlGaP Tremblay R, Burin JP, Rohel T, Gauthier JP, Almosni S, Quinci T, Letoublon A, Leger Y, Le Corre A, Bertru N, Durand O, Cornet C |
16 - 21 |
Anisotropic and temperature-dependent thermal conductivity of PbI2 Croll A, Tonn J, Post E, Bottner H, Danilewsky AN |
22 - 29 |
MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers Gutowski P, Sankowska I, Karbownik P, Pierscinska D, Serebrennikova O, Morawiec M, Pruszynska-Karbownik E, Golaszewska-Malec K, Pierscinski K, Muszalski J, Bugajski M |
30 - 38 |
Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes Le Boulbar ED, Priesol J, Nouf-Allehiani M, Naresh-Kumar G, Fox S, Trager-Cowan C, Satka A, Allsopp DWE, Shields PA |
39 - 44 |
Crystal growth and characterization of Eu2+ doped RbCaX3 (X = Cl, Br) scintillators Rebrova NV, Grippa AY, Pushak AS, Gorbacheva TE, Pedash VY, Viagin OG, Cherginets VL, Tarasov VA, Vistovskyy VV, Vas'kiv AP, Myagkota SV |
45 - 55 |
Effects of convection patterns on freckle formation of directionally solidified Nickel-based superalloy casting with abruptly varying cross-sections Qin L, Shen J, Li QD, Shang Z |
56 - 63 |
Microstructure and thermoelectric properties of doped p-type CoSb3 under TGZM effect Wang HQ, Li SM, Li X, Zhong H |
64 - 70 |
Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O) Riberi-Beridot T, Tsoutsouva MG, Regula G, Reinhart G, Perichaud I, Baruchel J, Mangelinck-Noel N |
71 - 71 |
Investigation on recalescence temperatures of deeply undercooled melts (vol 455, pg 29, 2016) Xu XL, Liu F, Hou H, Zhao YH, Gu T, Wang SY, Yan F |