Journal of Crystal Growth

Journal of Crystal Growth, Vol.474 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

1 - 2	Preface Derby JJ, Dupret F
3 - 7	Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth Liu X, Gao B, Nakano S, Kakimoto K
8 - 15	Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon Drikis I, Plate M, Sennikovs J, Virbulis J
16 - 23	Application of enthalpy model for floating zone silicon crystal growth Krauze A, Bergfelds K, Virbulis J
24 - 30	Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system Hur MJ, Han XF, Choi HG, Yi KW
31 - 36	Control of melt-crystal interface shape during sapphire crystal growth by heat exchanger method Wu M, Liu LJ, Ma WC
37 - 42	Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method Ma WC, Zhao WH, Wu M, Ding GQ, Liu LJ
43 - 49	Modeling of dopant segregation in sapphire single crystal fibre growth by Micro-Pulling-Down method Su WJ, Duffar T, Nehari A, Kononets V, Lebbou K
50 - 54	Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method Yamamoto T, Adkar N, Okano Y, Ujihara T, Dost S
55 - 60	Numerical study of the influence of forced melt convection on the impurities transport in a silicon directional solidification process Popescu A, Vizman D
61 - 68	Three-dimensional computations of the hydrodynamics and mass transfer during solution growth of KDP crystal with a planetary motion Hu ZT, Li M, Wang PF, Zhou C, Yin HW
69 - 75	Numerical analysis of impurity separation from waste salt by investigating the change of concentration at the interface during zone refining process Choi HG, Shim M, Lee JH, Yi KW
76 - 80	Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations Wang ZH, Deng XL, Cao K, Wang J, Wu L
81 - 88	3D numerical analysis of influence of the non-uniform deposition rate on the hillock density at HVPE-GaN surface Han XF, Lee JH, Lee YJ, Song JH, Yi KW
89 - 95	Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals Sueoka K, Vanhellemont J, Vanhellemont J
96 - 103	Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt Vanhellemont J, Kamiyama E, Nakamura K, Spiewak P, Sueoka K
104 - 109	Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals Yamaoka S, Kobayashi K, Sueoka K, Vanhellemont J
110 - 120	Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms- Kobayashi K, Yamaoka S, Sueoka K, Vanhellemont J
121 - 129	Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations Gao B, Nakano S, Harada H, Miyamura Y, Kakimoto K
130 - 134	Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells Nakano S, Gao B, Jiptner K, Harada H, Miyamura Y, Sekiguchi T, Fukuzawa M, Kakimoto K
135 - 139	Step bunching and macrostep formation in 1D atomistic scale model of unstable vicinal crystal growth Krzyzewski F, Zaluska-Kotur M, Krasteva A, Popova H, Tonchev V
140 - 145	Molecular dynamics simulations investigating consecutive nucleation, solidification and grain growth in a twelve-million-atom Fe-system Okita S, Verestek W, Sakane S, Takaki T, Ohno M, Shibuta Y
146 - 153	Phase-field-lattice Boltzmann studies for dendritic growth with natural convection Takaki T, Rojas R, Sakane S, Ohno M, Shibuta Y, Shimokawabe T, Aoki T
154 - 159	Multi-GPUs parallel computation of dendrite growth in forced convection using the phase-field-lattice Boltzmann model Sakane S, Takaki T, Rojas R, Ohno M, Shibuta Y, Shimokawabe T, Aoki T
160 - 165	Multi-phase-field study of the effects of anisotropic grain-boundary properties on polycrystalline grain growth Miyoshi E, Takaki T
166 - 170	Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling Chen GY, Lan CW
171 - 177	Validation, verification, and benchmarking of crystal growth simulations Dadzis K, Bonisch P, Sylla L, Richter T
178 - 182	Improvement of dopant distribution in radial direction of single crystals grown by micro-pulling-down method Yokota Y, Kudo T, Chani V, Ohashi Y, Kurosawa S, Kamada K, Zeng Z, Kawazoe Y, Yoshikawa A