Journal of Crystal Growth

Journal of Crystal Growth, Vol.477 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (59 articles)

1 - 1	Editor's preface Cerutti L, Lemaitre A, Rodriguez JB
2 - 6	Some aspects to the understanding of the droplet epitaxial nano-hole formation Nemcsics A
7 - 11	Optimization of metamorphic buffers for MBE growth of high quality AlInSb/InSb quantum structures: Suppression of hillock formation Shi Y, Gosselink D, Gharavi K, Baugh J, Wasilewski ZR
12 - 18	Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth Ito T, Akiyama T, Nakamura K
19 - 24	Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (001) using molecular beam epitaxy Zhang YC, Eyink KG, Grazulis L, Hill M, Peoples J, Mahalingam K
25 - 29	Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces Kawaharazuka A, Horikoshi Y
30 - 33	Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures Thainoi S, Kiravittaya S, Poempool T, Zon, Nuntawong N, Sopitpan S, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S
34 - 39	Monitoring surface roughness during film growth using modulated RHEED intensity oscillations Braun W
40 - 44	Suppression of twin generation in the growth of GaAs on Ge (111) substrates Kajikawa Y, Son Y, Hayase H, Ichiba H, Mori R, Ushirogouchi K, Irie M
45 - 49	Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration Fahed M, Desplanque L, Troadec D, Patriarche G, Wallart X
50 - 53	Real-time algorithm to determine the period and phase of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during epitaxial growth Braun W
54 - 58	Up-converted photoluminescence in InAs/GaAs heterostructures Zhang YW, Kamiya I
59 - 64	Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE Cortes-Mestizo IE, Briones E, Yee-Rendon CM, Peredo LZ, Espinosa-Vega LI, Droopad R, Mendez-Garcia VH
65 - 71	Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer Rodriguez JB, Cerutti L, Patriarche G, Largeau L, Madiomanana K, Tournie E
72 - 76	Growth and characterization of AlInAsSb layers lattice-matched to GaSb Tournet J, Rouillard Y, Tournie E
77 - 81	Growth rate dependence of boron incorporation into BxGa1-xAs layers Detz H, MacFarland D, Zederbauer T, Lancaster S, Andrews AM, Schrenk W, Strasser G
82 - 85	Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors Chen XY, Zhang YG, Gu Y, Ji XL, Xi SP, Du B, Ma YJ, Ji WY, Shi YH, Li AZ
86 - 90	Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors Patrashin M, Akahane K, Sekine N, Hosako I
91 - 96	Growth of GaP and AlGaP on GaP(111) B using gas-source molecular-beam-epitaxy Barakat JB, Dadgostar S, Hestroffer K, Bierwagen O, Trampert A, Hatami F
97 - 99	InSb/InAs/InGa(Al)As/GaAs(001) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 mu m Chernov MY, Komkov OS, Firsov DD, Meltser BY, Semenov AN, Terent'ev YV, Brunkov PN, Sitnikova AA, Kop'ev PS, Ivanov SV, Solov'ev VA
100 - 103	Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes Jin C, Wang FF, Xu QQ, Yu CZ, Chen JX, He L
104 - 109	Atomistic behaviour of (n x 3)- reconstructed areas of InAs-GaAs(001) surface at the growth condition Konishi T, Tsukamoto S, Ito T, Akiyama T, Kaida R
110 - 113	Interface roughness scattering in InGaAs/InAlAs double quantum wells grown on (100) and (411)A InP substrates at different growth temperatures Alcer D, Semtsiv MP, Masselink WT
114 - 117	CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE Vogt A, Schutt S, Frei K, Fiederle M
118 - 122	Nucleation and formation of Au-catalyzed ZnTe nanowires on (001) GaAs by MBE: From planar to out-of-plane growth Volobuev VV, Groiss H, Halilovic A, Steiner H, Khiar A, Hesser G, Springholz G
123 - 126	Structural and magnetic properties of (Zn,Fe)Te thin films grown by MBE under Zn-rich flux condition Nakamura T, Sugimura Y, Domon T, Ishitsuka S, Kanazawa K, Ofuchi H, Kuroda S
127 - 130	CdTe/Zn(Mg)(Se)Te quantum dots for single photon emitters grown by MBE Sorokin SV, Sedova IV, Gronin SV, Klimko GV, Belyaev KG, Rakhlin MV, Mukhin IS, Toropov AA, Ivanov SV
131 - 134	Light emission enhancement from Ge quantum dots with phosphorous delta-doped neighboring confinement structures Sawano K, Nakama T, Mizutani K, Harada N, Xu X, Maruizumi T
135 - 138	InGaAsBi materials grown by gas source molecular beam epitaxy Ai LK, Zhou SX, Qi M, Xu AH, Wang SM
139 - 143	Influence of growth conditions on the structural and opto-electronic quality of GaAsBi Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z, David JPR
144 - 148	Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys Delorme O, Cerutti L, Tournie E, Rodriguez JB
149 - 153	Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures Wecker T, Jostmeier T, Rieger T, Neumann E, Pawlis A, Betz M, Reuter D, As DJ
154 - 158	Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources Novikov SV, Foxon CT
159 - 163	Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study Hong M, Wan HW, Chang P, Lin TD, Chang YH, Lee WC, Pi TW, Kwo J
164 - 168	Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition Lin YH, Lin KY, Hsueh WJ, Young LB, Chang TW, Chyi JI, Pi TW, Kwo J, Hong M
169 - 173	Epitaxial growth of rocksalt Zn1-xMgxO on MgO (100) substrate by molecular beam epitaxy Wen MC, Lu SA, Chang L, Chou MMC, Ploog KH
174 - 178	Achieving high MgO content in wurtzite ZnO epilayer grown on ScAlMgO4 substrate Wen MC, Yan T, Chang L, Chou MMC, Ye N, Ploog KH
179 - 182	GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 - In comparison with atomic layer deposited Al2O3 Wan HW, Lin KY, Cheng CK, Su YK, Lee WC, Hsu CH, Pi TW, Kwo J, Hong M
183 - 187	Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films Schuffelgen P, Rosenbach D, Neumann E, Stehno MP, Lanius M, Zhao JL, Wang M, Sheehan B, Schmidt M, Gao B, Brinkman A, Mussler G, Schapers T, Grutzmacher D
188 - 192	Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems Lee H, Lee S, Choi S, Bac SK, Lee S, Li X, Liu XY, Dobrowolska M, Furdyna JK
193 - 196	Ultra-low charge and spin noise in self-assembled quantum dots Ludwig A, Prechtel JH, Kuhlmann AV, Houel J, Valentin SR, Warburton RJ, Wieck AD
197 - 200	Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation Kato M, Arimoto K, Yamanaka J, Nakagawa K, Sawano K
201 - 206	Growth of InN/GaN dots on 4H-SiC(0001) 4 degrees off vicinal substrates by molecular beam epitaxy Matsuoka K, Yagi S, Yaguchi H
207 - 211	Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates Jmerik VN, Kuznetsova NV, Nechaev DV, Shubina TV, Kirilenko DA, Troshkov SI, Davydov VY, Smirnov AN, Ivanov SV
212 - 216	Strain and anisotropy effects studied in InAs/GaAs(221) quantum dashes by Raman spectroscopy Espinosa-Vega LI, Eugenio-Lopez E, Gutierrez-Hernandez JM, Gorbatchev AY, Shimomura S, Mendez-Garcia VH
217 - 220	Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer Vorathamrong S, Ratanathammaphan S, Panyakeow S, Praserthdam P, Tongyam C
221 - 224	Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates Lu XM, Kumagai N, Minami Y, Kitada T, Isu T
225 - 229	A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy Sharma N, Reuter D
230 - 234	Growth of quantum three-dimensional structure of InGaAs emitting at similar to 1 mu m applicable for a broadband near-infrared light source Ozaki N, Kanehira S, Hayashi Y, Ohkouchi S, Ikeda N, Sugimoto Y, Hogg RA
235 - 238	GaAs quantum dot molecules filled into droplet etched nanoholes Heyn C, Kuster A, Grafenstein A, Ungeheuer A, Graf A, Hansen W
239 - 242	Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy Elborg M, Noda T, Mano T, Kuroda T, Yao YZ, Sakuma Y, Sakoda K
243 - 248	Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth Okumura S, Tomabechi S, Suzuki R, Matsukura Y, Tsunoda K, Kon JI, Nishino H
249 - 252	Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources Lu XM, Ota H, Kumagai N, Minami Y, Kitada T, Isu T
253 - 257	Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides Gu Y, Zhang YG, Chen XY, Ma YJ, Ji WY, Xi SP, Du B, Shi H, Li AZ
258 - 261	Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers Mathonniere S, Semtsiv MP, Masselink WT
262 - 266	Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation Damilano B, Vezian VS, Portail M, Alloing B, Brault J, Courville A, Brandli BV, Leroux M, Massies J
267 - 271	Enhancement of open circuit voltage in InGaAsP-inverted thin-film solar cells grown by solid-source molecular beam epitaxy Oshima R, Makita K, Tayagaki T, Sugaya T
272 - 276	Laterally biased structures for room temperature operation of quantum-well infrared photodetectors Guzman A, Gargallo-Caballero R, Lu X, Grahn HT
277 - 282	MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures Xu ZC, Chen JX, Wang FF, Zhou Y, Bai ZZ, Xu JJ, Xu QQ, Jin C, He L