| 1 - 8 |
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
Yang X, Nitta S, Nagamatsu K, Bae SY, Lee HJ, Liu YH, Pristovsek M, Honda Y, Amano H |
| 9 - 14 |
Kinetics of solution crystal growth of strengite, FePO4,2H(2)O
Madsen HEL, Koch CB |
| 15 - 22 |
Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses
O'Reilly AJ, Quitoriano N |
| 23 - 29 |
Facile synthesis of Co3O4 hexagonal plates by flux method
Han JL, Meng QF, Gao SL |
| 30 - 35 |
GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4
Aubin J, Hartmann JM |
| 36 - 43 |
Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials
Lee S, Wen W, Cheek Q, Maldonado S |
| 44 - 55 |
Influences of growth parameters on the reaction pathway during GaN synthesis
Zhang Z, Liu ZY, Fang HS |
| 56 - 60 |
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
Turski H, Muziol G, Siekacz M, Wolny P, Szkudlarek K, Feduniewicz-Zmuda A, Dybko K, Skierbiszewski C |
| 61 - 69 |
MBE growth of few-layer 2H-MoTe2 on 3D substrates
Vishwanath S, Sundar A, Liu XY, Azcatl A, Lochocki E, Woll AR, Rouvimov S, Hwang WS, Lu N, Peng X, Lien HH, Weisenberger J, McDonnell S, Kim MJ, Dobrowolska M, Furdyna JK, Shen K, Wallace RM, Jena D, Xing HG |
| 70 - 74 |
Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes
Lyu YX, Han X, Sun YY, Jiang Z, Guo CY, Xiang W, Dong YN, Cui J, Yao Y, Jiang DW, Wang GW, Xu YQ, Niu ZC |
| 75 - 84 |
In-situ studies of multicrystalline silicon nucleation and growth on alpha- and beta-Si3N4 coated substrates
Undheim E, Maeda K, Arnberg L, Holmestad R, Fujiwara K, Di Sabatino M |
