| 1 - 9 |
Aluminum hydroxide crystallization from aluminate solution using carbon dioxide gas: Effect of temperature and time
Shayanfar S, Aghazadeh V, Saravari A, Hasanpour P |
| 10 - 14 |
Effect of MACE parameters on length of porous silicon nanowires (PSiNWs)
Singh N, Sahoo MK, Kale PG |
| 15 - 17 |
Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity
Kumar VN, Hayakawa Y, Arivanandhan M, Rajesh G, Koyama T, Momose Y, Ozawa T, Okano Y, Inatomi Y |
| 18 - 23 |
The temperature dependence of the pre-exponential factor and interfacial energy for aqueous glycine solutions based on the metastable zone width data
Shiau LD |
| 24 - 30 |
Rapid synthesis of alpha calcium sulfate hemihydrate whiskers in glycerol-water solution by using flue-gas-desulfurization gypsum solid waste
Teng WL, Wang JS, Wu JS, Du YC, Jia XJ, Li HY, Wang TN |
| 31 - 35 |
Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
Li KL, Wang WJ |
| 36 - 42 |
Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates
Predan F, Ohlmann J, Mrabet S, Dimroth F, Lackner D |
| 43 - 50 |
Investigation on crystal growth and characterization of organic nonlinear optical triphenylmethane single crystal by vertical Bridgman technique
Arivazhagan T, Solanki SSB, Rajesh NP |
| 51 - 56 |
Controlled growth and Atomic-scale Characterization of Two-dimensional hexagonal boron nitride crystals
Azizi A, Abu AlSaud M, Alem N |
| 57 - 63 |
Single crystal growth and temperature dependent behaviors of melilite type piezoelectric crystal Ca2Al2SiO7
Jiang C, Long Y, Yu FP, Kong LF, Chen FF, Tian SW, Qin LF, Cheng XF, Zhao X |
| 64 - 68 |
Structure, phase composition, and some properties of melt grown GaSe:Er crystals
Borisenko EB, Timonina AV, Borisenko DN, Nikolaichik VI, Tereshchenko AN, Kolesnikov NN |
| 69 - 73 |
Position effects of mirror-lamp system on the growth of rutile crystal based on the infrared convergent-heating floating zone method
Watauchi S, Suzuki M, Nagao M, Tanaka I |
| 74 - 79 |
Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate
Kambayashi D, Mizuno Y, Takakura H, Maruyama T, Naritsuka S |
| 80 - 80 |
High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy (vol 454, pg 164, 2016)
Kyle ECH, Kaun SW, Wu F, Bonef B, Speck JS |
