| 1 - 7 |
Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals
Bockowski M, Iwinska M, Amilusik M, Lucznik B, Fijalkowski M, Litwin-Staszewska E, Piotrzkowski R, Sochacki T |
| 8 - 12 |
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth
Liu X, Harada H, Miyamura Y, Han XF, Nakano S, Nishizawa S, Kakimoto K |
| 13 - 17 |
The role of Cr on the electronic and optical properties of InCrN: A first principles study
de Carvalho RP, Miranda GR, da Silva AF |
| 18 - 23 |
Effect of growth temperature on the structural and optoelectronic properties of epitaxial indium oxide films
Du XJ, Man BY |
| 24 - 29 |
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Sonoda M, Nakano T, Shioura K, Shinagawa N, Ohtani N |
| 30 - 34 |
Synthesis and characterization of purple NaAlSi2O6 jadeite under high pressure and high temperature
Zhao L, Ma HA, Fang C, Ding LY, Jia XP |
| 35 - 39 |
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Anderson TJ, Gallagher JC, Luna LE, Koehler AD, Jacobs AG, Xie J, Beam E, Hobart KD, Feigelson BN |
| 40 - 46 |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B |
| 47 - 54 |
Identifying threading dislocation types in ammonothermally grown bulk alpha-GaN by confocal Raman 3-D imaging of volumetric stress distribution
Holmi JT, Bairamov BH, Suihkonen S, Lipsanen H |
| 55 - 61 |
Concept and method to create a distinct low-temperature region in a Si melt for growth of a Si single ingot with a large diameter ratio using the noncontact crucible method
Nakajima K, Ono S, Itoh H |
| 62 - 66 |
Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots
Muramatsu T, Hayama Y, Kutsukake K, Maeda K, Matsumoto T, Kudo H, Fujiwara K, Usami N |
| 67 - 76 |
Influence of alternating electromagnetic field and ultrasonic on calcium carbonate crystallization in the presence of magnesium ions
Han Y, Zhang CX, Wu LC, Zhang QR, Zhu L, Zhao RK |
| 77 - 84 |
Comparison of thermal stress computations in Czochralski and Kyropoulos growth of sapphire crystals
Steilan C, Sen G, Duffar T |
| 85 - 89 |
An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures
Malkowski TF, Speck JS, Denbaars SP, Nakamura S |
| 90 - 97 |
In situ observation of crystal/melt interface and infrared measurement of temperature profile during directional solidification of silicon wafer
Liao TJ, Kang YS, Lan CW |
| 98 - 105 |
Transition from hypereutectic to hypoeutectic for rapid solidification in an undercooled Co-B alloy
He YX, Li JS, Wang J, Beaugnon E |
