1 - 6 |
Growth of III-N/graphene heterostructures in single vapor phase epitaxial process Lundin WV, Zavarin EE, Sakharov AV, Zakheim DA, Davydov VY, Smirnov AN, Eliseyev IA, Yagovkina MA, Brunkov PN, Lundina EY, Markov LK, Tsatsulnikov AF |
7 - 12 |
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition Liu XF, Yan GG, Liu B, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Sun GS, Zeng YP |
13 - 16 |
Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys Hasegawa Y, Akiyama T, Pradipto AM, Nakamura K, Ito T |
17 - 25 |
Large-area diamond thin film on Q-carbon coated crystalline sapphire by HFCVD Haque A, Pant P, Narayan J |
26 - 30 |
Flux growth of beta-NaGaO2 single crystals Suzuki I, Kakinuma A, Ueda M, Omata T |
31 - 36 |
Thermal stress simulation of optimized SiC single crystal growth crucible structure Yang YB, Wang J, Wang YM |
37 - 40 |
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC Niu YX, Tang XY, Sang L, Li Y, Kong LY, Tian L, Tian HL, Wu PF, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM |
41 - 43 |
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality Yang QK, Zhang DG, Li ZH, Luo WK, Pan L |
44 - 50 |
Spectroscopic, thermal, and laser properties of disordered garnet Nd:CLTGG crystal Ma CY, Wang YM, Cheng XF, Xue M, Zuo CH, Gao CY, Guo SY, He JL |
51 - 55 |
Crystallization of multicrystalline silicon from reusable silicon nitride crucibles: Material properties and solar cell efficiency Bellman MP, Stokkan G, Ciftja A, Denafas J, Kaden T |
56 - 61 |
Effect of gas flow rate on chemical reactions in Czochralski silicon crystal growth Li Y, Gao MM, Li J, Gao A, Liang S, Li HB |
62 - 62 |
RETRACTION: Nucleation and growth behavior of well-aligned ZnO nanorods onorganic substrates in aqueous solutions (Retraction of Vol 283, Pg 141, 2005) Lin CC, Chen SY, Cheng SY |
63 - 63 |
RETRACTION: Growth behavior and microstructure evolution of ZnO nanorods grown on Si in aqueous solution (Retraction of Vol 274, Pg 438, 2004) Liou SC, Hsiao CS, Chen SY |