| 1 - 6 |
Optimization of size uniformity and dot density of InxGa1-xAs/GaAs quantum dots for laser applications in 1 mu m wavelength range
Finke T, Sichkovskyi V, Reithmaier JP |
| 7 - 11 |
Centimeter size BiSeI crystal grown by physical vapor transport method
Xiao B, Zhu MQ, Ji LL, Zhang BB, Dong JP, Yu JY, Sun QH, Jie WQ, Xu YD |
| 12 - 16 |
Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy
Averett KL, Hatch JB, Eyink KG, Bowers CT, Mahalingam K |
| 17 - 23 |
Crystallization of sodium chloride dihydrate (hydrohalite)
Drebushchak VA, Drebushchak TN, Ogienko AG, Yunoshev AS |
| 24 - 27 |
Single crystal growth of transition-metal carbide hexagonal-Mo2C via La-C flux method
Lu FJ, Zhu XD, Zhe J, Tian ML |
| 28 - 34 |
Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs
Siddique A, Ahmed R, Anderson J, Piner EL |
| 35 - 38 |
Effect of pH on formation of single-phase vaterite
Kogo M, Umegaki T, Kojima Y |
| 39 - 47 |
On the effect of the continuous phase on primary crystal nucleation of aqueous KNO3 solution droplets
Selzer D, Frank C, Kind M |
| 48 - 53 |
Recrystallization mechanism of abnormal large grains during long growth of CVD-ZnS
Wei NG, Yang H, Yang DY, Li HW, Huo CS, Li JM, Li DX, Yang JC, Shi JJ, Guo L |
| 54 - 58 |
Revealing influence mechanism of a transverse static magnetic field on the refinement of primary dendrite spacing during directional solidification
Shen Z, Zhou BF, Zhong YB, Zheng TX, Ren WL, Lei ZS, Ren ZM |
| 59 - 63 |
Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
Horiuchi T, Wang L, Sekimoto A, Okano Y, Ujihara T, Dost S |
| 64 - 67 |
Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth
Charles M, Mrad M, Kanyandekwe J, Yon V |
| 68 - 71 |
Kinetics of autoepitaxial crystal growth in amorphous films of Cr2O3
Bagmut AG, Bagmut IA |
