| 1 - 6 |
3C-SiC grown on Si by using a Si1-xGex buffer layer
Zimbone M, Zielinski M, Barbagiovanni EG, Calabretta C, La Via F |
| 7 - 13 |
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
Sabanskis A, Virbulis J |
| 14 - 19 |
Optimization of total resolved shear stress in AlN single crystals homoepitaxially grown by physical vapor transport method
Wang QK, Zhao YT, Huang JL, Fu DY, He GD, Wu L |
| 20 - 24 |
Interface structure and planar defects in the heterostructure of pyrochlore-type (Ca,Ti)(2)(Nb,Ti)(2)O-7 film on SrTiO3 (001) substrate
Wu SQ, Chen YH, Wang Y, Wang H, Liu K, Mi SB |
| 25 - 34 |
Transport and crystallization of NaCl solution in porous silicate materials
Zhao J, Luo HJ |
| 35 - 40 |
Crystal growth and luminescent properties of LiNa5Mo9O30
Sukharev VA, Sadovskiy AP, Sukhanova EA, Dovnarovich AD, Spassky DA, Podurec KM, Kaloyan AA, Nagirnyi V, Omelkov SI, Avetissov IC |
| 41 - 45 |
Effect of point defects trapping characteristics on mobility-lifetime (mu tau) product in CdZnTe crystals
Zhang JX, Liang XY, Min JH, Zhang JJ, Zhang DL, Jin CW, Liang SJ, Chen P, Ling LW, Chen J, Shen Y, Wang LJ |
| 46 - 53 |
Preferred orientations and microstructures of lanthanum phosphate films prepared via laser chemical vapor deposition
Katsui H, Kondo N |
| 54 - 59 |
Nonlinear optical crystals K7CaR2(B5O10)(3) (R = Nd, Yb), growth and properties
Kuznetsov AB, Ezhov DM, Kokh KA, Kononova NG, Shevchenko VS, Uralbekov B, Bolatov A, Svetlichnyi VA, Lapin IN, Simonova EA, Kokh AE |
| 60 - 68 |
Investigation about elliptical region observed on CdZnTe wafers after etching treatment
Zhang DL, Min JH, Liang XY, Sun SW, Zhang JJ, Zhang JX, Jin CW, Liang SJ, Ling LW, Shen Y, Wang LJ |
| 69 - 76 |
Biaxial growth of pentacene on rippled silica surfaces studied by rotating grazing incidence X-ray diffraction
Pachmajer S, Werzer O, Mennucci C, de Mongeot FB, Resel R |
| 77 - 83 |
Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field
Yokoyama R, Nakamura T, Sugimura W, Ono T, Fujiwara T, Kakimoto K |
| 84 - 90 |
GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity
Pelati D, Patriarche G, Mauguin O, Largeau L, Travers L, Brisset F, Glas F, Oehler F |
| 91 - 99 |
Molecular aggregation of L-isoleucine in aqueous solution and its impact on the determination of solubility and nucleation kinetics
Azmi NSM, Anuar N, Roberts KJ, Abu Bakar NF, Aripin NFK |
