1 - 4 |
Synthesis and characterization of lanthanum chloride doped L-alanine maleate single crystals Fentaw DA, Peter ME, Abza T |
5 - 10 |
The regulating effect of cooling water temperature on the axial growth rate of large single crystal diamond under HPHT conditions Li YD, Wang FB, Wang CX, Chen LC, Guo LS, Fang C |
11 - 15 |
Regrown source/drain in InGaAs multi-gate MOSFETs Miyamoto Y, Kanazawad T, Kise N, Kinoshita H, Ohsawa K |
16 - 24 |
Pure SnSe, In and Sb doped SnSe single crystals - Growth, structural, surface morphology and optical bandgap study Patel S, Chaki SH, Vinodkumar PC |
25 - 29 |
Epitaxial growth and characterization of Cd1-xMnx Te films on Si(111) substrates Ghosh S, Rodrigues LN, Moura LG, Ferreira SO |
30 - 36 |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio Anandan D, Nagarajan V, Kakkerla RK, Yu HW, Ko HL, Singh SK, Lee CT, Chang EY |
37 - 44 |
Equilibrium and growth facetted shapes in isothermal solidification of silicon: 3D phase-field simulations Boukellal AK, Elvalli AKS, Debierre JM |
45 - 52 |
Alkali-treated starches as a new class of templates for CaCO3 spherulite formation: Experimental and theoretical studies Prajongtat P, Saparpakorn P, Asamo S, Hongsprabhas P, Israkarn K |
53 - 60 |
Crystallization in small droplets: Competition between homogeneous and heterogeneous nucleation Kozisek Z |
61 - 67 |
Hydrothermal preparation and luminescence properties of Ca9Y(PO4)(7):Eu2+, Mn2+ nanocrystals Zhang HL, Yu XF, Sun HY, Mi XY, Zhou HY, Zhang XY, Bai ZH |
68 - 77 |
Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates Ichikawa S, Funato M, Kawakami Y |
78 - 85 |
Effects of solidification parameters and magnetic field on separation of primary silicon from hypereutectic Ti-85 wt.% Si melt Zhu KS, Hu JF, Ma WH, Wei KX, Lv TL, Dai YN |
86 - 91 |
Deposition of germanium film on monocrystalline silicon substrate with cut-off angle Chen M, Chen NF, Tao QL, Chang ZW, Chen JK |
92 - 102 |
An in vitro evaluation of the effects of Urtica dioica and Fructus Urtica Piluliferae extracts on the crystallization of calcium oxalate Polat S |
103 - 109 |
Investigation on thermally induced crystallization processes in glassy (As2Se3)(100-x)(SbSI)(x) system Skuban F, Siljegovic MV, Skuban SJ, Lukic-Petrovic SR |
110 - 116 |
Growth and physical properties of BiFeO3 thin films directly on Si substrate Yao XK, Wang C, Tian SL, Zhou Y, Li XM, Ge C, Guo EJ, He M, Bai XD, Gao P, Yang GZ, Jin KJ |
117 - 124 |
Secondary phase formation by liquid immiscibility in Ca3Ta(Ga1-xAlx)Si2O14 melt Honda Y, Niinomi H, Nozawa J, Okada J, Uda S |
125 - 127 |
Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Grodecki K, Martyniuk P |
128 - 138 |
Modeling of multistep Ca2+ transfer in the carbonation system of CO2-NH4OH-CaSO4 center dot 2H(2)O-CaCO3 Gong Y, Wu L, Li J, Zhu JH |
139 - 150 |
Kinetic Monte Carlo simulations of coverage effect on Ag and Au monolayers growth on Cu (110) Dardouri M, Hassani A, Hasnaoui A, Arbaoui A, Boughaleb Y, Sbiaai K |
151 - 159 |
Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles Schwanke S, Trempa M, Reimann C, Kuczynski M, Schroll G, Sans J, Friedrich J |
160 - 174 |
Heterogeneous and homogeneous hydrate nucleation in CO2/water systems Kvamme B, Aromada SA, Saeidi N |
175 - 182 |
Synthesis of iron sulfide thin films and powders from new xanthate precursors Almanqur L, Alam F, Whitehead G, Vitorica-yrezabal I, OBrien P, Lewis DJ |
183 - 190 |
Phase field simulation of dendrite sidebranching during directional solidification of Al-Si alloy Zhang B, Zhao Y, Chen W, Xu Q, Wang M, Hou H |
191 - 194 |
Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process Bergfelds K, Pudzs M, Sabanskis A, Virbulis J |
195 - 203 |
Optimization of the controlling recipe in quasi-single crystalline silicon growth using artificial neural network and genetic algorithm Dang YF, Liu LJ, Li ZY |
204 - 209 |
Growth of narrow substrate temperature window on the crystalline quality of InN epilayers on AlN/Si(111) substrates using RF-MOMBE Chen WC, Chen HP, Lin YW, Liu DR |
210 - 213 |
Heteroepitaxial growth of nonlinear optical materials for frequency conversion in the mid and longwave IR Tassev VL, Vangala SR, Tomich D, Dass C |
214 - 220 |
The highly crystalline tellurium doped ZnO nanowires photodetector Khosravi-Nejad F, Teimouri M, Marandi SJ, Shariati M |
221 - 229 |
Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interface Thieme N, Keil M, Meier D, Bonisch P, Dadzis K, Patzold O, Stelter M, Buttner L, Czarske J |
230 - 234 |
Thick hydride vapor phase epitaxial growth of ZnSe on GaAs (100) vicinal and orientation patterned substrates Vangala SR, Brinegar D, Tassev VL, Snure M |
235 - 235 |
Particle engulfment dynamics under oscillating crystal growth conditions (vol 468, pg 24, 2017) Tao YT, Sorgenfrei T, Jauss T, Croll A, Reimann C, Friedrich J, Derby JJ |
236 - 236 |
Analysis of the traveling heater method for the growth of cadmium telluride (vol 454, pg 45, 2016) Peterson JH, Yeckel A, Fiederle M, Derby JJ |