Journal of Crystal Growth

Journal of Crystal Growth, Vol.269, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (27 articles)

1 - 9	Plasma-assisted MBE growth and characterization of InN on sapphire Ivanov SV, Shubina TV, Jmerik VN, Vekshin VA, Kop'ev PS, Monemar B
10 - 14	Ultrafast carrier dynamics in InN epilayers Chen F, Cartwright AN, Lu H, Schaff WJ
15 - 21	MOVPE growth of InN films and quantum dots Maleyre W, Briot O, Ruffenach S
22 - 28	Absorption and Raman scattering processes in InN films and dots Briot O, Maleyre B, Ruffenach S, Gil B, Pinquier C, Demangeot F, Frandon J
29 - 34	Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements Swartz CH, Tompkins RP, Giles NC, Myers TH, Lu H, Schaff WJ, Eastman LF
35 - 40	Electron mobility in indium nitride Nag BR
41 - 49	Vacancy defects in epitaxial InN: identification and electrical properties Laakso A, Oila J, Kemppinen A, Saarinen K, Egger W, Liszkay L, Sperr P, Lu H, Schaff WJ
50 - 58	The potential of ion beam techniques for the development of indium nitride Timmers H, Shrestha SK, Byrne AP
59 - 65	A Raman spectroscopy study of InN Kuball M, Pomeroy JW, Wintrebert-Fouquet M, Butcher KSA, Lu H, Schaff WJ
66 - 71	MBE growth and properties of InN-based dilute magnetic semiconductors Chen PP, Makino H, Yao T
72 - 76	Piezoelectricity in indium nitride Guy IL, Zheng Z, Wintrebert-Fouquet M, Butcher KSA, Chen P, Tansley TL
77 - 86	Absorption and photoluminescence features caused by defects in InN Alexandrov D, Butcher KSA, Wintrebert-Fouquet M
87 - 94	Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods Lan ZH, Wang WM, Sun CL, Shi SC, Hsu CW, Chen TT, Chen KH, Chen CC, Chen YF, Chen LC
95 - 99	Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition Kim HJ, Na H, Kwon SY, Seo HC, Kim HJ, Shin Y, Lee KH, Kim DH, Oh HJ, Yoon S, Sone C, Park Y, Yoon E
100 - 105	The composition dependence of the InxGa1-xN bandgap O'Donnell KP, Fernandez-Torrente I, Edwards PR, Martin RW
106 - 110	Scanning tunneling and cathodoluminescence spectroscopy of indium nitride Phillips MR, Zareie MH, Gelhausen O, Drago M, Schmidtling T, Richter W
111 - 118	The influence of structural properties on conductivity and luminescence of MBE grown InN Specht P, Armitage R, Ho J, Gunawan E, Yang Q, Xu X, Kisielowski C, Weber ER
119 - 127	Optical properties and electronic structure of InN and In-rich group III-nitride alloys Walukiewicz W, Li SX, Wu J, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ
128 - 133	Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates Jain A, Raghavan S, Redwing JM
134 - 138	InN grown by remote plasma-enhanced chemical vapor deposition Wintrebert-Fouquet M, Butcher KSA, Chen PPT
139 - 144	MOVPE growth and photoluminescence of wurtzite InN Matsuoka T, Okamoto H, Takahata H, Mitate T, Mizuno S, Uchiyama Y, Makimoto T
145 - 154	Visible emissions near 1.9-2.2 eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy Yodo T, Kitayama Y, Miyaki K, Yona H, Harada Y, Prince KE, Scott K, Butcher A
155 - 161	The effect of substrate polarity on the growth of InN by RF-MBE Naoi H, Matsuda F, Araki T, Suzuki A, Nanishi Y
162 - 166	Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy Higashiwaki M, Matsui T
167 - 172	Characteristics of InN thin films grown using a PAMBE technique Kinsey RJ, Anderson PA, Kendrick CE, Reeves RJ, Durbin SM
173 - 180	Relationship between the optical properties and superconductivity of InN with high carrier concentration Inushima T, Sakon T, Motokawa M
VII - VII	ONR indium nitride workshop - Proceedings of the First International Indium Nitride workshop - 16-20 November 2003, Fremantle, Australia Butcher KSA