1 - 1 |
Introduction to the special issue on photonic materials and devices -Preface Chin MK, Chia CK, Pita K, Teng JH, Ooi BS |
2 - 6 |
The role of monolithic integration in advanced laser products Marsh JH |
7 - 11 |
Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP Tu CW, Chen WM, Buyanova IA, Hwang JS |
12 - 17 |
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy Jiang DS, Qu YH, Ni HQ, Wu DH, Xu YQ, Niu ZC |
18 - 22 |
Depth dependence of optical property beyond the critical thickness of an InGaN film Teng CC, Wang HC, Tang TY, Lu YC, Cheng YC, Yang CC, Ma KJ, Wang WM, Hsu CW, Chen LC |
23 - 26 |
MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N-2 ambient Tang XH, Zhang BL, Bo BX, Mei T, Chin MK |
27 - 31 |
High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD Zhao Q, Pan JQ, Zhang J, Zhu HL, Wang W |
32 - 35 |
Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation Nie D, Mei T, Djie HS, Chin MK, Tang XH, Wang YX |
36 - 39 |
Infrared absorption and current-voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy Li H, Mei T, Zhang DH, Fan WJ, Yoon SF, Loke WK |
40 - 43 |
InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering Djie HS, Ooi BS, Aimez V |
44 - 48 |
Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy Liu HF, Xiang N, Chua SJ, Tripathy S |
49 - 52 |
Plasma-induced quantum well intermixing for the universal high-density photonic integration Djie HS, Mei T |
53 - 56 |
Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing Helmy AS, Martin P, Landesman JP, Bryce AC, Aitchison JS, Marsh JH |
57 - 60 |
Bandgap engineering in semiconductor quantum dots Chia CK, Dong JR, Chua SJ, Tripathy S |
61 - 64 |
Highly strained quantum structures grown on GaAs(001) vicinal substrate by MOCVD Wang BZ, Chua SJ, Dong JR, Wang YJ |
65 - 69 |
Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies Stepikhova MV, Krasil'nikova LV, Krasil'nik ZF, Shengurov VG, Chalkov VY, Svetlov SP, Zhigunov DM, Timoshenko VY, Kashkarov PK |
70 - 74 |
Preparation and characterization of nanocrystalline SnO2 thin films by PECVD Huang H, Tan OK, Lee YC, Tse MS |
75 - 78 |
Violet upconversion emission of sol-gel neodymium-doped GeO2-SiO2 thin films via organically modified silane precursors Que WX, Wang LL, Chen T, Sun Z, Hu X |
79 - 83 |
Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealing Choi WK, Chew HG, Ho V, Ng V, Chim WK, Ho YW, Ng SP |
84 - 86 |
Stability of nanocrystalline silicon particles in solution Shinoda K, Yanagisawa S, Sato K, Hirakuri K |
87 - 91 |
Dielectric functions of SiO2 film embedded with silicon nanocrystals Ding L, Chen TP, Liu Y, Ng CY |
92 - 95 |
Characteristics of mechanically milled silicon nanocrystals embedded in TEOS thin films Lau HW, Tan OK, Ooi BC, Liu Y, Chen TP, Lu D |
96 - 99 |
Characterization and optical properties of ZnSe prepared by hydrothermal method Gong H, Huang H, Ding L, Wang MQ, Liu KP |
100 - 104 |
Polymer devices for photonic applications Wong WH, Liu KK, Chan KS, Pun EYB |
105 - 109 |
Hole injection or blocking? The role of CuPc in Alq(3)-based organic light-emitting devices Divayana Y, Chen BJ, Sun XW, Wong TKS, Sarma KR, Hu X |
110 - 114 |
Performance enhancement of organic light-emitting diode by heat treatment Wong FL, Sun HY, Tong SW, Chan MY, Lee CS, Lee ST |
115 - 118 |
Effect of doping on optical and transport properties of charge carriers in Alq3 Uddin A, Lee CB, Hu X, Wong TKS, Sun XW |
119 - 122 |
A nano-patterned organic light-emitting diode with high extraction efficiency Wang BZ, Ke L, Chua SJ |
123 - 127 |
Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors Ramil AM, Singh TB, Haber NT, Gunes S, Andreev A, Matt GJ, Resel R, Sitter H, Sariciftci S |
128 - 136 |
Fabrication of 2D ordered structure of self-assembled block copolymers containing gold nanoparticles Dai CA, Wu YL, Lee YH, Chang CJ, Su WF |
137 - 139 |
Real blue-emitting light-emitting diodes based on fluorene derivative polymers Woo HS, Kim BS, Kim CG, Oh JJ, Kim MS, Park SJ, Kwon TW, Cho SJ, Park DK, Jin SH |
140 - 143 |
Fabrication of organic thin film transistor with MICB-deposited PI insulation layer Cho SJ, Choi MK, Kim SO, Song JK, Yoon HM, Jin SH, Kwon TW, Woo HS, Park DK |
144 - 147 |
Monolithically integrated twin ring diode lasers for rotation sensing applications Osinski M, Cao HJ, Liu CY, Eliseev PG |
148 - 152 |
Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters Hou LP, Zhu HL, Zhou F, Wang BJ, Bian J, Wang W |
153 - 156 |
Superluminescent diodes using quantum dots superlattice Dimas CE, Djie HS, Ooi BS |
157 - 161 |
Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packages Hu JZ, Yang LQ, Hwang WJ, Shin MW |
162 - 165 |
GaAs wafer for passive mode locking and compression of energetic Q-switched pulses Tang DY, Kong J, Ng SP |
166 - 170 |
Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors Sellai A, Dawson P |
171 - 175 |
Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials Wong CK, Wong H, Kok CW, Chan M |
176 - 179 |
Planar waveguide devices based on sol-gel-derived photopatternable hybrid material Zhang X, Zhao Z, Qian M, Lee SY, Chin MK, Zeng X, Low DKY, Lu ACW, Plante P |
180 - 187 |
Lithium niobate optical modulators: Devices and applications Binh LN |
188 - 191 |
DC-drift suppression of Ti : LiNbO3 waveguide chip by minimizing the contamination in oxide buffer layer Kim DS, Yang WS, Kim WK, Lee HY, Kim H, Yoon DH |
192 - 194 |
A focus-switchable lens made of polymer-liquid crystal composite Liu YJ, Sun XW, Wang Q |
195 - 199 |
Study of pulsed laser-deposited phosphorus-doped carbon/p-silicon photovoltaic cell Islam MZ, Alam M, Mominuzzaman SM, Rusop M, Soga T, Jimbo T, Umeno M |
200 - 204 |
Formation of nanoimprinting mould through use of nanosphere lithography Wang BZ, Zhao W, Chen A, Chua SJ |
205 - 208 |
Fabrication of colloidal crystal heterostructures using a horizontal deposition method Yan QF, Zhao XS, Zhou ZC |
209 - 212 |
Fabrication of optical waveguides using proton beam writing Bettiol AA, Rao SV, Sum TC, van Kan JA, Watt F |
213 - 216 |
Study and optimization of room temperature inductively coupled plasma etching of InP using Cl-2/CH4/H-2 and CH4/H-2 Lee CW, Nie D, Mei T, Chin MK |