1 - 5 |
Large scale tapered GaN rods grown by chemical vapour deposition Qiu HL, Cao CB, Xiang X, Zhang YH, Li H, Zhu HS |
6 - 10 |
Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy Zakharov ND, Werner P, Gerth G, Schubert L, Sokolov L, Gosele U |
11 - 17 |
Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates Zhou W, Ren DW, Dapkus PD |
18 - 23 |
Growth and characterization of CuAlSe2(112)/GaAS(100) heteroepitaxial layers grown by hot wall epitaxy method You SH, Hong KJ, Jeong TS, Lee SY, Bang JJ, Moon JD, Kim HS |
24 - 28 |
Annealing behavior of N-bonding configurations in GaN0.023As0.977 ternary alloy grown on GaAs(001) substrate by molecular beam epitaxy Liu HF, Xiang N, Chua SJ |
29 - 34 |
Adhesion-free growth of AlSb bulk crystals in silica crucibles Pino R, Ko Y, Dutta PS |
35 - 43 |
On the effects of furnace gradients on interface shape during the growth of cadmium zinc telluride in EDG furnaces Lun L, Yeckel A, Reed M, Szeles C, Daoutidis P, Derby JJ |
44 - 49 |
What causes rough surface in AlN crystal growth? Kazan M, Nader R, Moussaed E, Masri P |
50 - 55 |
Optical and transport properties of chromium-doped CdSe and CdS0.67Se0.33 crystals Kasiyan V, Dashevsky Z, Shneck R, Towe E |
56 - 60 |
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering Wang P, Chen NF, Yin ZG, Yang F, Peng CT |
61 - 66 |
Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon Chen JH, Yang DR, Ma XY, Que DL |
67 - 72 |
Seed-layer induced growth of high-quality oriented ZnO films by a sol-gel process Zhang CY, Li XM, Zhang X, Yu WD, Zhao JL |
73 - 79 |
Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001) Guo XX, Braun W, Jenichen B, Ploog KH |
80 - 86 |
Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE Sallet V, Patriarche G, Merat-Combes MN, Largeau L, Mauguin O, Travers L |
87 - 90 |
Effects of nitrogen incorporation on the electronic properties of GaxN1-xAs1-y epilayers probed by persistent photoconductivity Hsu SH, Chen WR, Su YK, Chuang RW, Chang SJ, Chen WC |
91 - 95 |
Growth of epitaxial gamma-Al2O3(111) films with smooth surfaces on chemically oxidized Si(111) substrates using an Al-N2O mixed source molecular beam epitaxy Okada T, Ito M, Sawada K, Ishida M |
96 - 102 |
Template-assisted synthesis of porous molybdenum dioxide nanofibers and nanospheres by redox etching method Wang ST, Zhang YG, Wang WZ, Li GL, Ma XC, Li XB, Zhang ZD, Qian YT |
103 - 110 |
Thermal behavior and microstructure of the intermetallic compounds formed at the Sn-3Ag-0.5Cu/Cu interface after soldering and isothermal aging Liu CY, Lai CH, Wang MC, Hon MH |
111 - 114 |
Effects of the source temperature on the formation of a metastable HgI2 phase and consequences for the nucleation and growth behaviors in PVT ampoules Lin JX, Shih CT, Zhou HT, Luo YZ, Liao JL, Chiu KC |
115 - 120 |
Gallium-based catalysts for growth of GaN nanowires Simpkins BS, Ericson LM, Stroud RM, Pettigrew KA, Pehrsson PE |
121 - 126 |
The influence of Mg doping on the dielectric and tunable properties of (Ba0.6Sr0.4)(0.925)K0.075TiO3 thin films fabricated by sol-gel method Sun XH, Guo SS, Wu GZ, Li MY, Zhao XZ |
127 - 130 |
Study on the electrical and optical properties of Pb(Mg1/3Nb2/3) O-3-PbTiO3 thin films deposited by a chemical solution method Liu AY, Meng XJ, Sun JL, Xue JQ, Ma JH, Wang L, Chu JH |
131 - 136 |
Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires Leung CY, Djurisic AB, Leung YH, Ding L, Yang CL, Ge WK |
137 - 143 |
Polarity- and orientation-related defect distribution in 4H-SiC single crystals Rost HJ, Schmidbauer M, Siche D, Fornari R |
144 - 148 |
Crystal growth and characterization of Nd, Mg co-doped near-stoichiometric LiNbO3 Nakamura M, Sekita M, Takekawa S, Kitamura K |
149 - 155 |
X-ray topography of SrLaGaO4 single crystals Malinowska A, Lefeld-Sosnowska M, Pajaczkowska A, Klos A |
156 - 160 |
Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method Yuan NY, Li JH, Fan LN, Wang XQ, Zhou Y |
161 - 165 |
Microstructure and electrical properties of lanthanum nickel oxide thin films deposited by metallo-organic decomposition method Wang ZH, Kumagat T, Kokawa H |
166 - 170 |
Optimization of (11(2)over-bar-0) a-plane GaN growth by MOCVD on (1(1)over-bar-02) r-plane sapphire Ni X, Fu Y, Moon YT, Biyikli N, Morkoc H |
171 - 175 |
Tip-to-tip growth of aligned single-walled carbon nanotubes under an electric field Chiu CC, Tai NH, Yeh MK, Chen BY, Tseng SH, Chang YH |
176 - 179 |
Improvement of luminescence from beta-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer Li C, Lai HK, Chen SY, Suemasu T, Hasegawa F |
180 - 184 |
Properties of (h00)-oriented La1-xNaxMnO3 films (x=0.1, 0.15 and 0.3) prepared by chemical solution deposition method Dong WW, Zhu XB, Tao RH, Fang XD |
185 - 191 |
Impurity-induced defect and its effect on protein crystal perfection Yoshizaki I, Fukuyama S, Koizumi H, Tachibana M, Kojima K, Matsuura Y, Tanakae M, Igarashi N, Kadowaki A, Rong L, Adachi S, Yoda S, Komatsu H |
192 - 196 |
Effect of solvent on crystallization behavior of xylitol Hao HX, Hou BH, Wang JK, Lin GY |
197 - 202 |
Gypsum crystal size distribution in four continuous flow stirred slurry boric acid reactors in series compared with the batch Cakal GO, Eroglu I, Ozkar S |
203 - 206 |
Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB) Wang LH, Jie WQ |
207 - 212 |
In situ hydrothermal synthesis of YVO4 nanorods and microtubes using (NH4)(0.5)V2O5 nanowires templates Wu XC, Tao YR, Mao CJ, Liu DJ, Mao YQ |
213 - 219 |
Growth kinetics of potassium chloride - I: Pure aqueous solutions Lopes A, Farelo F |
220 - 224 |
Growth kinetics of potassium chloride II - Water-ethanol systems Lopes A, Farelo F |
225 - 228 |
Direct evidence of compositional pulling effect in AlxGa1-xN epilayers Lin HY, Chen YF, Lin TY, Shih CF, Liu KS, Chen NC |
229 - 234 |
Valence electron structure analysis of epitaxial growth of diamond (100) film on Si and c-BN substrate Zhang XJ, Zhang JM, Xu KW |
235 - 240 |
A simple transferable interatomic potential model for binary oxides applied to bulk alpha-Al2O3 and the (0001) alpha-Al2O3 surface Sun JZ, Stirner T, Hagston WE, Leyland A, Matthews A |
241 - 247 |
MBE growth optimization of InN nanowires Stoica T, Meijers R, Calarco R, Richter T, Luth H |
248 - 257 |
Re-determination of succinonitrile (SCN)-camphor phase diagram Teng J, Liu S |
258 - 265 |
Microstructure characterization and room temperature deformation of a rapidly solidified NiAl-based eutectic alloy containing trace Dy Li HT, Guo JT, Huai KW, Ye HQ |
266 - 271 |
Synthesis and characterization of spherical Sr2CeO4 phosphors by spray pyrolysis for field emission displays Liu XM, Luo Y, Lin J |
272 - 279 |
Mechanism of in-plane alignment in magnetron sputtered biaxially aligned yttria-stabilized zirconia Mahieu S, Ghekiere P, Depla D, De Gryse R, Lebedev OI, Van Tendeloo G |
280 - 291 |
Hydrothermal waves in differentially heated shallow annular pools of silicone oil Shi WY, Imaishi N |
292 - 295 |
Flux growth and characterization of SrMo0.93O3 single crystal Zhao BC, Sun YP, Zhang SB, Zhu XB, Song WH |
296 - 300 |
Selected synthesis of cubic and hexagonal NaYF4 crystals via a complex-assisted hydrothermal route Wang ZJ, Tao F, Yao LZ, Cai WL, Li XG |
301 - 306 |
Large-aperture YCOB crystal growth for frequency conversion in the high average power laser system Fei YT, Chai BHT, Ebbers CA, Liao ZM, Schaffers KI, Thelin P |
307 - 312 |
Novel yttria-stabilised zirconia-alumina tetragonal phase obtained by co-precipitation Santoyo-Salazar J, Gonzalez G, Ascencio JA, Tartaj-Salvador J, Chavez-Carvayar JA |