1 - 7 |
Thermoelectromagnetic convection in vertical Bridgman grown germanium-silicon Dold P, Szofran FR, Benz KW |
8 - 11 |
Growth of InN by vertical flow MOVPE Suihkonen S, Sormunen J, Rangel-Kuoppa VT, Koskenvaara H, Sopanen M |
12 - 17 |
Growth of bulk Ga(Mn,Si)N single crystals Kaminski M, Szyszko T, Podsiadlo S, Wozniak K, Dobrzycki L, Gebicki W, Gosk J, Zajac M, Twardowski A |
18 - 21 |
Effects of phase formation on electron field emission from BN films Wang RZ, Zhou H, Song XM, Wang B, Wang H, Yan H |
22 - 26 |
Effect of bias voltages on the synthesis of nanostructured carbon nitride films Feng PX, Yang P, Shi YC |
27 - 33 |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy Lai FI, Kuo SY, Wang JS, Hsiao RS, Kuo HC, Chi J, Wang SC, Wang HS, Liang CT, Chen YF |
34 - 39 |
Synthesis and characterization of high purity GaN nanowires Xu BS, Zhai LY, Liang J, Ma SF, Jia HS, Liu XG |
40 - 44 |
Structural and opto-electrical properties of molybdenum diselenide thin films deposited by chemical bath method Hankare PP, Chate PA, Delekar SD, Bhuse VM, Asabe MR, Jadhav BV, Garadkar KM |
45 - 51 |
Growth of microtubular complexes as precursors to synthesize nanocrystalline ZnS and CdS Li C, Yang XG, Yang BJ, Yan Y, Qian YT |
52 - 59 |
Numerical studies concerning the dependence of the impurity distribution on the pulling rate and on the radius of the capillary channel in the case of a thin rod grown from the melt by edge-defined film-fed growth (EFG) method Braescu L, Balint S, Tanasie L |
60 - 65 |
A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy Gao CX, Yu FC, Choi AR, Kim DJ, Kim CG, Kim CS, Kim HJ, Ihm YE |
66 - 71 |
Germanium effect on as-grown oxygen precipitation in Czochralski silicon Chen JH, Yang DR, Li H, Ma XY, Que DL |
72 - 76 |
GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2 Jian JK, Wang G, Wang C, Yuan WX, Chen XL |
77 - 81 |
Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers Ehsani H, Lewis N, Nichols GJ, Danielson L, Dashiell MW, Shellenbarger ZA, Wang CA |
82 - 85 |
Cathodoluminescence mapping and selective etching of defects in bulk GaN Lu H, Cao XA, LeBoeuf SF, Hong HC, Kaminsky EB, Arthur SD |
86 - 93 |
Molecular beam epitaxy growth of 1.55 mu m GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence Gupta JA, Sproule GI, Wu X, Wasilewski ZR |
94 - 99 |
Structure and optical properties of solution deposited TiO2 films Goh GKL, Liew CPK, Kim J, White TJ |
100 - 106 |
Phase selection of microcrystalline GaN synthesized in supercritical ammonia Hashimoto T, Fujito K, Sharma R, Letts ER, Fini PT, Speck JS, Nakamura S |
107 - 111 |
Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy Vignaud D, Zaknoune M, Mollot F |
112 - 116 |
Synthesis of single-crystalline CeB6 nanowires Zou CY, Zhao YM, Xu JQ |
117 - 122 |
Transparent and inclusion-free RE1-xLaxVO4 (RE = Gd, Y) single crystal fibers grown by LHPG technique Andreeta MRB, de Camargo ASS, Nunes LAO, Hernandes AC |
123 - 129 |
Growth and EPR and optical properties of Li2B4O7 single crystals doped with Co2+ ions Piwowarska D, Kaczmarek SM, Berkowski M, Stefaniuk I |
130 - 134 |
Structure-related infrared optical properties of Ba(ZrxTi1-x)O-3 thin films grown on Pt/Ti/SiO2/Si substrates by low-temperature processing Xu JB, Gao C, Zhai JW, Yao X, Xue JQ, Huang ZM |
135 - 139 |
Hydrothermal synthesis of perovskite bismuth ferrite crystallites Chen C, Cheng JR, Yu SW, Che LJ, Meng ZY |
140 - 147 |
Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates Yun J, Takahashi T, Ishida Y, Okumura H |
148 - 153 |
Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100) Yun J, Takahashi T, Mitani T, Ishida Y, Okumura H |
154 - 159 |
Surfactant-related growth of InAs1-xSbx quantum structures on InP(001) by metalorganic vapor-phase epitaxy Kawaguchi K, Ekawa M, Akiyama T, Kuwatsuka H, Sugawara M |
160 - 165 |
Inhibition of calcium oxalate monohydrate crystallization by the combination of citrate and osteopontin Wang LJ, Zhang W, Qiu SR, Zachowicz WJ, Guan XY, Tang RK, Hoyer JR, De Yoreo JJ, Nancollas GH |
166 - 174 |
Magnetic field influence on the molecular alignment of vanadyl phthalocyanine thin films Kolotovska V, Friedrich M, Zahn DRT, Salvan G |
175 - 182 |
Microstructure analysis and formation mechanism of ZnO nanoporous film via the ultrasonic irradiation mediated STLAR method Gao XD, Li XM, Yu WD, Li L, Peng F, Zhang CY |
183 - 186 |
Solvothermal synthesis of single crystalline ZnTe nanorod bundles in a mixed solvent of ethylenediamine and hydrazine hydrate Du J, Xu LQ, Zou GF, Chai LL, Qian YT |
187 - 195 |
Controlled fabrication of nanostructured ZnO particles and porous thin films via a modified chemical bath deposition method Wang HH, Xie CS |
196 - 201 |
CuO shuttle-like nanocrystals synthesized by oriented attachment Zhang YG, Wang ST, Li XB, Chen LY, Qian YT, Zhang ZD |
202 - 206 |
Recombinant human-like collagen directed growth of hydroxyapatite nanocrystals Zhai Y, Cui FZ |
207 - 211 |
Effects of Mn on the crystal structure of alpha-Al(Mn,Fe)Si particles in A356 alloys Kim HY, Park TY, Han SW, Lee HM |
212 - 217 |
Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001) Ramachandran S, Chugh A, Tiwari A, Narayan J |
218 - 224 |
Growing carbon nanotube nanojunctions on an aluminum substrate Wang SD, Chen WL, Chang MH, Chueh YL |
225 - 231 |
Electrical properties of (001)-textured Pb(Zr,Ti)O-3 thin films with different BaPbO3 thicknesses Liang CS, Wu JM |
232 - 238 |
Orientated nano grain growth and effect of annealing on grain size in LiTaO3 thin films deposited by sol-gel technique Satapathy S, Varma KBR |
239 - 242 |
Investigation of Mn-doped Si films prepared by magnetron cosputtering Liu LF, Chen NF, Wang Y, Yin ZG, Yang F, Chai CL, Zhang X |
243 - 248 |
Growth of CaxBa1-xNb2O6 thin films on MgO(100) by pulsed laser deposition Mi SB, Ha CL, Urban K, Heeg T, Schubert J |
249 - 257 |
Strong-field electromagnetic stirring in the vertical gradient freeze process with a submerged heater Ma N, Walker JS |
258 - 261 |
Hydrothermal synthesis and characterization of novel flower-like zinc-doped SnO2 nanocrystals Li ZR, Li XL, Zhang XX, Qian YT |
262 - 266 |
Floating zone growth of La1-xBaxMnO3 single crystals Shulyatev D, Kozlovskaya N, Privezentsev R, Pestun A, Mukovskii Y, Elochina L, Zverkov S |
267 - 271 |
Thermal, spectroscopic and laser properties of Yb3+Na+: CaF2 single crystals Xu J, Su LB, Zhang D, Du J, Liang XY, Xue YH, Chai L, Xu XD, Zhao GJ |
272 - 289 |
Second order sharp-interface and thin-interface asymptotic analyses and error minimization for phase-field descriptions of two-sided dilute binary alloy solidification Gopinath A, Armstrong RC, Brown RA |
290 - 300 |
Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering Wilhelmsson O, Palmquist JP, Lewin E, Emmerlich J, Eklund P, Persson POA, Hogberg H, Li S, Ahuja R, Eriksson O, Hultman L, Jansson U |
301 - 308 |
A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers Moon YT, Xie J, Liu C, Fu Y, Ni X, Biyikli N, Zhu K, Yun F, Morkoc H, Sagar A, Feenstra RM |
309 - 313 |
Growth and characterization of Pr3+-doped Gd1-xYbxF3 fluoride single crystal for visible up-conversion luminescence applications Simura R, Jouini A, Kamada K, Yoshikawa A, Aoki K, Guyot Y, Boulon G, Fukuda T |
314 - 315 |
Critical remarks on paper "Optical frequency doubting in microtube Czochralski (mu T-CZ) grown benzophenone single crystals", M. Arivanandhan et al., J. Crystal Growth 281 (2005) 596-603 Datta PK, Das SK, Mukhopadhyay S, Sinha N |