1 - 6 |
Direct observation of nucleation and early stages of growth of GaN nanowires Diaz RE, Sharma R, Jarvis K, Zhang QL, Mahajan S |
7 - 11 |
Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy Guo QX, Akiyama H, Mikuriya Y, Saito K, Tanaka T, Nishio M |
12 - 18 |
Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology Kohen D, Cayron C, De Vito E, Tileli V, Faucherand P, Morin C, Brioude A, Perraud S |
19 - 23 |
Bi incorporation in GaAs(100)-2 x 1 and 4 x 3 reconstructions investigated by RHEED and STM Bastiman F, Cullis AG, David JPR, Sweeney SJ |
24 - 26 |
Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals Urbanczyk A, Notzel R |
27 - 33 |
Growth evolution and microstructural characterization of semipolar (11(2)over-bar2) GaN selectively grown on etched r-plane sapphire Leung B, Sun Q, Yerino C, Zhang Y, Han J, Kong BH, Cho HK, Liao KY, Li YL |
34 - 37 |
Growth and electrical properties of 0.95Na(0.5)Bi(0.5)TiO(3)-0.05K(0.5)Bi(0.5)TiO(3) lead-free piezoelectric crystal by the TSSG method Sun RB, Li XB, Zhang QH, Fang BJ, Zhang HW, Lin D, Wang S, Zhao XY, Luo HS |
38 - 41 |
Preparation of Cu2ZnSnS4 single crystals from Sn solutions Nagaoka A, Yoshino K, Taniguchi H, Taniyama T, Miyake H |
42 - 45 |
Synthesis and second harmonic generation response of KNbO3 nanoneedles Wang Y, Chen Z, Ye ZZ, Huang JY |
46 - 52 |
Study of the effects of Ga3+ co-doping on the Lu0.8Sc0.2BO3:Ce scintillation crystals Wu YT, Ren GH, Ding DZ, Yang F, Pan SK |
53 - 60 |
Nitride precipitation in compositionally heterogeneous alloys: Nucleation, growth and coarsening during nitriding Van Landeghem HP, Goune M, Redjaimia A |
61 - 65 |
Crystal growth and optical properties of YAl3(BO3)(4) for UV applications Yu JQ, Liu LJ, Zhai NX, Zhang X, Wang GL, Wang XY, Chen CT |
66 - 71 |
Anisotropic line broadening in nanocrystalline cadmium sulfide prepared by hydrothermal reaction Aghdaee SR, Soleimanian V |