Journal of Crystal Growth

Journal of Crystal Growth, Vol.347, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (21 articles)

1 - 6	Mechanism of hydrothermal growth of ferroelectric PZT nanowires Wang J, Durussel A, Sandu CS, Sahini MG, He ZB, Setter N
7 - 10	In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD Xie XB, Zeng XB, Yang P, Wang C, Wang QM
11 - 14	The effect of compaction and heat treatment on phase Transitions of ZnSe(Te) bulk material made of nanopowder Kolesnikov NN, Borisenko EB, Borisenko DN, Zverkova II, Timonina AV
15 - 18	Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode Lei XY, Remiens D, Sama N, Chen Y, Mao CL, Dong XL, Wang GS
19 - 24	The growth of anatase bipyramidal crystals during hydrothermal synthesis Horvat B, Recnik A, Drazic G
25 - 30	Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM Nakano T, Shioda T, Enomoto N, Abe E, Sugiyama M, Nakano Y, Shimogaki Y
31 - 36	Growth kinetics on silicon facets during low-temperature crystallization from indium solution Teubner T, Heimburger R, Boeck T, Fornari R
37 - 44	Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers Hartmann JM, Barnes JP, Veillerot M, Fedeli JM, La Guillaume QBA, Calvo V
45 - 48	Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition Abadier M, Berechman RA, Neudeck PG, Trunek AJ, Skowronski M
49 - 52	Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate Penuelas J, Lu X, Blanchard NP, Saint-Girons G, Vilquin B, Cremillieu P, Mazurczyk R, Gendry M
53 - 55	Zinc mapping in THM grown detector grade CZT Roy UN, Weiler S, Stein J, Cui Y, Groza M, Buliga V, Burger A
56 - 61	Growth of ZnOx:Al by high-throughput CVD at atmospheric pressure Illiberi A, Simons PJPM, Kniknie B, van Deelen J, Theelen M, Zeman M, Tijssen M, Zijlmans W, Steijvers HLAH, Habets D, Janssen AC, Beckers EHA
62 - 72	Mineral replacement rate of olivine by chrysotile and brucite under high alkaline conditions Lafay R, Montes-Hernandez G, Janots E, Chiriac R, Findling N, Toche F
73 - 76	Rational growth of ternary Zn2GeO4 nanorods and self-assembled hierarchical nanostructures Sun YG, Yu L, Rao PH
77 - 81	Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature Vazquez-Cortas D, Shimomura S, Lopez-Lopez M, Cruz-Hernandez E, Gallardo-Hernandez S, Kudriavtsev Y, Mendez-Garcia VH
82 - 87	Growth condition related orientation transition for YBa2Cu3O7-delta films on NdGaO3 substrate Chen YY, Guo LS, Cai YQ, Tang CY, Yan SB, Yao X, Puzniak R
88 - 94	Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates Huang L, Liu F, Zhu JX, Kamaladasa R, Preble EA, Paskova T, Evans K, Porter L, Picard YN, Davis RF
95 - 98	Degenerated MgZnO films obtained by excessive zinc Liu JS, Shan CX, Wang SP, Li BH, Zhang ZZ, Shen DZ
99 - 103	Crystal growth of LiGd1-xLuxF4 solid solutions by zone melting technique dos Santos IA, Klimm D, Baldochi SL, Ranieri IM
104 - 112	Growth and conductivity enhancement of N-doped ZnO nanorod arrays Mahmood K, Park SB
113 - 118	Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses Liu KW, Young SJ, Chang SJ, Hsueh TH, Chen YZ, Chen KJ, Hung H, Wang SM, Wu YL