1 - 7 |
Control of growth uniformity of III-V bulk crystals grown by contactless liquid phase electroepitaxy Strak P, Zytkiewicz ZR, Krukowski S |
8 - 12 |
Influence of polyelectrolytes on crystallization of zeolite Y Koroglu HJ, Oz PH, Bulutcu AN |
13 - 16 |
Single crystal growth by self-flux method of the mixed valence gold halides Cs-2[(AuX2)-X-I][(AuX4)-X-III] (X=Br,I) Riggs SC, Shapiro MC, Corredor F, Geballe TH, Fisher IR, McCandless GT, Chan JY |
17 - 25 |
Sucrose crystal growth in the presence of dextran of different molecular weights Khaddour I, Ferreira A, Bento L, Rocha F |
26 - 32 |
Peculiarities of the growth of KDP single crystals with incorporated aluminium oxyhydroxide nanoparticles Pritula IM, Kosinova AV, Vorontsov DA, Kolybaeva MI, Bezkrovnaya ON, Tkachenko VF, Vovk OM, Grishina EV |
33 - 37 |
Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique Du YY, Jie WQ, Wang T, Zheng X, Xu YD, Luan LJ |
38 - 45 |
Growth of high-quality multicrystalline Si ingots using noncontact crucible method Nakajima K, Morishita K, Murai R, Kutsukake K |
46 - 51 |
Investigation of crystal growth of 50 mm CZT using SiC pedestal and pBN crucible Crocco J, Black A, Bensalah H, Zheng Q, Carcelen V, Dieguez E |
52 - 58 |
Epitaxial relationships of ZnO nanostructures grown by Au-assisted pulsed laser deposition on c- and a-plane sapphire Weigand C, Tveit J, Ladam C, Holmestad R, Grepstad J, Weman H |
59 - 62 |
MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire Stellmach J, Frentrup M, Mehnke F, Pristovsek M, Wernicke T, Kneissl M |
63 - 72 |
Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells Lee SR, Koleske DD, Crawford MH, Wierer JJ |
73 - 77 |
The characteristics of heterogeneous nucleation on concave surfaces and implications for directed nucleation or surface activity by surface nanopatterning Qian M, Ma J |
78 - 83 |
Substrate dependent growth modes of ZnO nanorods grown by metalorganic chemical vapor deposition Jung IO, Park JY, Kim SS |
84 - 87 |
Concentration of extended defects in CdZnTe single crystals: Effects of cooling rate after growth Xu L, Jie W, Bolotnikov AE, Roy UN, Stein J, Hossain A, Camarda GS, Kim KH, Yang G, Gul R, Cui Y, Xu Y, Wang T, Zha G, James RB |
88 - 100 |
Impact of stochastic accelerations on dopant segregation in microgravity semiconductor crystal growth Ruiz X, Bitlloch P, Ramirez-Piscina L, Casademunt J |
101 - 108 |
Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells Kim JH, Hwang SM, Son JS, Baik KH, Song KM, Park JH |
109 - 112 |
Condition of Si crystal formation by vaporizing Na from NaSi Morito H, Karahashi T, Yamane H |
113 - 121 |
Maintaining convex interface shapes during electrodynamic gradient freeze growth of cadmium zinc telluride using a dynamic, bell-curve furnace profile Zhang N, Yeckel A, Derby JJ |
122 - 128 |
SiO gas emission and triple line dynamics of small silicon droplets on quartz Wachsmuth D, Gebensleben T, Weiss D, Becker V, Alphei LD, Becker JA |
129 - 139 |
Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals Daggolu P, Yeckel A, Bleil CE, Derby JJ |
140 - 144 |
Formation and growth mechanism of TiC terraces during self-propagating high-temperature synthesis from a Fe-Ti-C system Zhang MX, Hu QD, Huo YQ, Huang B, Li JG |
145 - 150 |
Purification of metallurgical silicon through directional solidification in a large cold crucible Liu T, Dong ZY, Zhao YW, Wang J, Chen T, Xie H, Li J, Ni HJ, Huo DX |
151 - 158 |
Crystal structure and melting behavior of homo-polypropylene and heterophasic ethylene-propylene copolymer after long time heat treatment Wang SC, Zhang J, Chen SJ, Zhu H |
159 - 165 |
Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-delta (X=0-1) thin films on Si(111) Zoellner MH, Zaumseil P, Wilkens H, Gevers S, Wollschlager J, Baumer M, Xie YH, Niu G, Schroeder T |
166 - 170 |
Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy Moetakef P, Ouellette DG, Zhang JY, Cain TA, Allen SJ, Stemmer S |