1 - 8 |
CVD grown silicon thin films with high carbon concentration: morphology and self-assembly controlled by surface segregation Watanabe F, Ohmura K, Kawai S, Motooka T |
9 - 13 |
Effect of fluid concentration on the formation of diamond in the CO2-H2O-graphite system under HP-HT conditions Kumar MDS, Akaishi M, Yamaoka S |
14 - 19 |
Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE Naritsuka S, Nishinaga T |
20 - 28 |
The growth of SiGe on sapphire using rapid thermal chemical vapor deposition Dubbelday WB, Kavanagh KL |
29 - 37 |
Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model Takayama T, Yuri M, Itoh K, Baba T, Harris JS |
38 - 43 |
Growth and crystal properties of Tl-doped PbTe crystals grown by Bridgman method under Pb and Te vapor pressure Nugraha, Tamura W, Itoh O, Amemiya T, Suto K, Nishizawa J |
44 - 52 |
Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy Loke WK, Yoon SF, Zheng HQ |
53 - 57 |
InGaAs quantum dots on GaAs(311)B substrates confined in AlGaAs barrier layers Akahane K, Song H, Okada Y, Kawabe M |
58 - 63 |
Spinodal decomposition in A(x)(III)B(1-x)(III)C(y)(V)D(1-y)(V) quaternary alloys Asomoza R, Elyukhin VA, Pena-Sierra R |
64 - 73 |
Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP Oyama Y, Suzuki T, Suto K, Nishizawa JI |
74 - 81 |
Nitrogen-doping effect in a fast-pulled Cz-Si single crystal Park BM, Seo GH, Kim G |
82 - 87 |
Growth of p- and n-type bismuth telluride thin films by co-evaporation Zou HL, Rowe DM, Min G |
88 - 95 |
Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs Rasp M, Birkmann B, Muller G |
96 - 103 |
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate Xu HZ, Bell A, Wang ZG, Okada Y, Kawabe M, Harrison I, Foxon CT |
104 - 109 |
Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density Cho HK, Lee JY, Choi SC, Yang GM |
110 - 117 |
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE Xu HZ, Takahashi K, Wang CX, Wang ZG, Okada Y, Kawabe M, Harrison I, Foxon CT |
118 - 124 |
Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3 Kumagai Y, Takemoto K, Koukitu A, Seki H |
125 - 129 |
Growth of a new UV nonlinear optical crystal: KBe2(BO3)F-2 Tang DY, Xia YN, Wu BC, Chen CT |
130 - 134 |
Growth model and morphology of Ti3SiC2 grains Tang K, Wang CA, Huang Y, Zan QF |
135 - 143 |
Temperature oscillation in a tin liquid bridge and critical Marangoni number dependency on Prandtl number Yang YK, Kou S |
144 - 153 |
Mass transport in the epitaxial lateral overgrowth of gallium nitride Mitchell CC, Coltrin ME, Han J |
154 - 162 |
Growth, characterisation and surface cleaning procedures for high-purity tungsten single crystals Cortenraad R, Ermolov SN, Semenov VN, van der Gon AWD, Glebovsky VG, Bozhko SI, Brongersma HH |
163 - 169 |
Growth of well-crystallized segmented graphite nanofibers by catalytic chemical vapor deposition Chen XH, Deng FM, Lu XN, Wu GT, Wang M, Yang HS, Zhang XB |
170 - 182 |
A theoretical approach to the single-source precursor concept: quantum chemical modeling of gas-phase reactions Timoshkin AY, Bettinger HF, Schaefer HF |
183 - 193 |
Model of boron incorporation into silicon epitaxial film in a B2H6-SiHCl3-H-2 system Habuka H, Otsuka T, Qu WF, Shimada M, Okuyama K |
194 - 201 |
Growth and structural investigations of La1-xPrxCaO3 solid solution single crystals Berkowski M, Fink-Finowicki J, Byszewski P, Diduszko R, Kowalska E, Aleksiyko R, Piekarczyk W, Vasylechko LO, Savytskij DI, Perchuc L |
202 - 208 |
Structural defects of Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals grown by a Bridgman method Xu GS, Luo HS, Xu HQ, Qi ZY, Wang PC, Zhong WH, Yin ZW |
209 - 214 |
Growth of Yb-doped Ca4GdO(BO3)(3) crystals and their spectra and laser properties Zhang HJ, Meng XL, Wang P, Zhu L, Liu XS, Liu XM, Yang YY, Wang RH, Dawes J, Piper J, Zhang SJ, Sun L |
215 - 234 |
Thermodynamic calculations of congruent vaporization and interactions with residual water during magnesium fluoride vacuum deposition Dumas L, Chatillon C, Quesnel E |
235 - 242 |
Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by high-temperature sequential deposition Shi J, Ishii D, Hashimoto M, Barna A, Barna PB, Haga Y, Nittono O |
243 - 248 |
Czochralski growth of UV-grade CaF2 single crystals using ZnF2 additive as scavenger Ko JM, Tozawa S, Yoshikawa A, Inaba K, Shishido T, Oba T, Oyama Y, Kuwabara T |
249 - 262 |
Growth phenomena in the surface layer and step generation from the crystal edges Zaitseva N, Smolsky I, Carman L |
263 - 278 |
Numerical simulation of the hydrodynamics and mass transfer in the large scale, rapid growth of KDP crystals. Part 1. Computation of the transient, three-dimensional flow field Robey HF, Maynes D |
279 - 286 |
Hydroxyapatite crystallization on sodium cholate Koutsopoulos S, Dalas E |
287 - 292 |
The effect of ultrasonic field on calcium carbonate scale formation Dalas E |
293 - 297 |
Calcium carbonate crystallization in the presence of glutamic acid Manoli F, Dalas E |
298 - 310 |
Validity of Hartman-Perdok PBC theory in prediction of crystal morphology from solution and surface X-ray diffraction of potassium dihydrogen phosphate (KDP) Strom CS |
311 - 316 |
Morphology and solubility of multiple crystal forms of Taka-amylase A Ninomiya K, Yamamoto T, Oheda T, Sato K, Sazaki G, Matsuura Y |
317 - 327 |
Metastability in drowning-out crystallisation: precipitation of highly soluble sulphates Pina CM, Fernandez-Diaz L, Prieto M, Veintemillas-Verdaguer S |
328 - 342 |
Catalyzed nucleation under microgravity conditions: results with a model glass Reiss H, Muller M, Pascova R, Gutzow I |
343 - 355 |
Convection in a Czochralski crucible - Part 1: non-rotating crystal Hintz P, Schwabe D, Wilke H |
356 - 364 |
Convection in a Czochralski crucible - Part 2: non-rotating crystal Hintz P, Schwabe D |
365 - 379 |
Directional solidification microstructures in diffusive and convective regimes Trivedi R, Miyahara H, Mazumder P, Simsek E, Tewari SN |
380 - 391 |
Measurement of the density of succinonitrile-acetone alloys Ceynar DL, Beckermann C |
392 - 398 |
Bicrystal growth and characterization of copper twist grain boundaries Schwarz SM, Houge EC, Giannuzzi LA, King AH |
399 - 413 |
Further examinations of dendritic growth theories Xu JJ, Yu DS |
414 - 425 |
A continuum model for the growth of epitaxial films Schulze TP, Weinan E |