1 - 5 |
Single crystal growth of the tetragonal tungsten bronze CaxBa1-xNb2O6 (x=0.28; CBN-28) Esser M, Burianek M, Klimm D, Muhlberg M |
6 - 13 |
Calculated strain energy of hexagonal epitaxial thin films Shen JY, Johnston S, Shang SL, Anderson T |
14 - 21 |
Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology Zauner ARA, Aret E, van Enckevort WJP, Weyher JL, Porowski S, Schermer JJ |
22 - 33 |
Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography Dudley M, Vetter WM, Neudeck PG |
34 - 38 |
Enhancement in the quality of GaN crystal grown on a thermal-treated silicon substrate Chen XF, Kato T, Sawaki N |
39 - 51 |
A numerical simulation study for the effect of applied magnetic field in liquid phase electroepitaxy Dost S, Liu Y, Lent B |
52 - 56 |
Start of 2D nucleation by accumulation of Ga adatoms on GaAs (111)B facet Kishimoto D, Nishinaga T, Naritsuka S, Sakaki H |
57 - 63 |
Point defects of ZnSe epilayers grown by hot wall epitaxy Hong KJ, You SH, Jeong TS, Youn CJ, Hong MS, Park JS, Park CS |
64 - 72 |
Growth morphology of MnAs epilayers on GaAS(111)-B substrates by molecular beam epitaxy Etgens VH, Eddrief M, Demaille D, Zheng YL, Ouerghi A |
73 - 79 |
Mass spectrometric study of the CdTe-ZnTe system Alikhanian AS, Guskov VN, Natarovsky AM, Greenberg JH, Fiederle M, Benz KW |
80 - 86 |
Evaluation of thermal and growth stresses in heteroepitaxial AIN thin films formed on (0001) sapphire by pulsed laser ablation Keckes J, Six S, Tesch W, Resel R, Rauschenbach B |
87 - 97 |
Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W |
98 - 103 |
Al0.3Ga0.7As microtips grown by self-assembled LPE for integrated SNOM sensors Hu LZ, Jie S, Meng QD, Su YM, Yu Z |
104 - 111 |
Tip formation of micrometer scale GaAs pyramid structures grown by MOCVD Bauhuis GJ, Mulder P, van Kempen H |
112 - 116 |
ZnO growth on Si substrates by metalorganic vapor phase epitaxy Ogata K, Kim SW, Fujita S, Fujita S |
117 - 123 |
Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method Straubinger TL, Bickermann M, Weingartner R, Wellmann PJ, Winnacker A |
124 - 134 |
Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe Tena-Zaera R, Mora-Sero I, Martinez-Tomas C, Munoz-Sanjose V |
135 - 141 |
Growth and photoconductor properties of HgCdTe epilayers grown by hot wall epitaxy method Hong KJ, Jeong JW, Baek HW, Jeong TS, Youn CJ, Moon JD, Park JS |
142 - 151 |
Spray pyrolysis growth and material properties of In2O3 films Prince JJ, Ramamurthy S, Subramanian B, Sanjeeviraja C, Jayachandran M |
152 - 156 |
The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica Liu YX, Liu YC, Shen DZ, Zhong GZ, Fan XW, Kong XG, Mu R, Henderson DO |
157 - 163 |
Strongly oriented thin films of Co3O4 deposited on single-crystal MgO(100) by low-pressure, low-temperature MOCVD Mane AU, Shalini K, Wohlfart A, Devi A, Shivashankar SA |
164 - 169 |
A model for the growth of bamboo and skeletal nanotubes: catalytic capillarity Chadderton LT, Chen Y |
170 - 175 |
Crystallization of quasi-two-dimensional vanadates in the CaO-V2O3-VO2-V2O5 system Maltsev V, Janod E |
176 - 184 |
Thermal diffusion of Cr2+ in bulk ZnSe Ndap JO, Chattopadhyay K, Adetunji OO, Zelmon DE, Burger A |
185 - 189 |
Crystal growth and morphology of substituted gadolinium gallium garnet Fei YT |
190 - 195 |
Numerical simulation of photorefractive gain in CdTe : V with optimum frequency of the electric field Ifegous B, Fliyou M, Adhiri R, Sribi C, Fahli A, Souifi A, Bremond G |
196 - 202 |
Effect of seed orientation on the growth of TGS crystals with large (010) facets needed for detector applications Satapathy S, Sharma SK, Karnal AK, Wadhawan VK |
203 - 211 |
Transformation of anhydrous calcium sulphate into calcium sulphate dihydrate in aqueous solutions Kontrec J, Kralj D, Brecevic L |
212 - 217 |
Synthesis, crystal growth and FTIR, NMR, SHG studies of 4-methoxy benzaldehyde-N-methyl-4-stilbazolium tosylate (MBST) Perumal CKL, Arulchakkaravarthi A, Rajesh NP, Raghavan PS, Huang YC, Ichimura M, Ramasamy P |
218 - 229 |
Growth rate and morphology of ice crystals growing in a solution of trehalose and water Sei T, Gonda T, Arima Y |
230 - 235 |
A laboratory investigation of cyanobacterial extracellular polymeric secretions (EPS) in influencing CaCO3 polymorphism Kawaguchi T, Decho AW |
236 - 240 |
Epitaxial growth of Fe films on cubic GaN(001) Lallaizon C, Schieffer P, Lepine B, Guivarc'h A, Abel F, Cohen C, Feuillet G, Daudin B, Van Dau FN |
241 - 254 |
Electrically enhanced free dendrite growth in polar and non-polar systems Libbrecht KG, Crosby T, Swanson M |
255 - 266 |
Two-subgrain single quasicrystals Al-Cu-Co alloy growth and characterisation Bogdanowicz W |
267 - 276 |
Three-dimensional crystal growth - I: linear analysis and self-similar evolution Cristini V, Lowengrub J |
277 - 286 |
Auxiliary optical heating for controlled crystal growth Bates SC, Knight KS |
287 - 291 |
Contraction rate of diffusion-limited aggregation Miyagawa Y, Honjo H, Katsuragi H |
292 - 304 |
Suppressing morphological instability via feedback control Savina TV, Nepomnyashchy AA, Brandon S, Lewin DR, Golovin AA |
305 - 312 |
Modelling of the temperature changes by adequate changes of the pulling rate in the case of sheets and filaments grown from the melt in a vacuum by EFG method Braescu L, Balint AM, Jadaneantu I, Balint S |
313 - 320 |
Eutectic patterns with weak convection in binary systems Wang WM, Liu JM, Chen XY, Liu ZG |
321 - 329 |
The study of light yield increase after low dose rate irradiation in Y3+ doping PbWO4 crystals Zhang X, Liao JY, Li PJ, Yuan H, Sheng BF, Shao PF, Li CQ, Yin ZW |
330 - 330 |
The impact of nitrogen on the defect aggregation in silicon (vol 226, pg 19, 2001) von Ammon W, Holzl R, Virbulis J, Dornberger E, Schmolke R, Graf D |
331 - 331 |
Crystal growth, thermal and optical performance of BiB3O6 (vol 233, pg 282, 2001) Teng B, Wang JY, Wang ZP, Hu XB, Jiang HD, Liu H, Cheng XF, Dong SM, Liu YG, Shao ZS |