1 - 8 |
Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation Luo MC, Li JM, Wang QM, Sun GS, Wang L, Li GR, Zeng YP, Lin LY |
9 - 14 |
Optical properties of the ZnSe/GaAs heteroepitaxial layers grown by hot wall epitaxy Jeong TS, Yu PY, Hong KJ, Kim TS, Youn C, Choi YD, Lee KS, O B, Yoon MY |
15 - 22 |
Influence of a ZnMnTe buffer layer on the growth of ZnTe on (001)GaAs by MOVPE Zozime A, Seibt M, Ertel J, Tromson-Carli A, Druilhe R, Grattepain C, Triboulet R |
23 - 27 |
Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation Wan Q, Wang TH, Liu WL, Lin CL |
28 - 36 |
Strain-induced effect on the Al incorporation in AlGaN films and the properties of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition Gong JR, Liao WT, Hsieh SL, Lin PH, Tsai YL |
37 - 43 |
The influence of point defect on the behavior of oxygen precipitation in CZ-Si wafers Hwang DH, Hur SM, Lee KH |
44 - 58 |
Longitudinal anisotropic stress and deformation in multilayered film heterostructures due to lattice misfit Chen TC, Wu HC, Lin CL |
59 - 64 |
GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3 Tanaka A, Funayama Y, Murakami T, Katsuno H |
65 - 71 |
Growth and characterization of In0.28Ga0.72N/GaN multiple-quantum wells on Si(111) Lee SJ, Jang SH, Lee SS, Lee CR |
72 - 77 |
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate Li DB, Dong X, Huang JS, Liu XL, Xu ZY, Wang XH, Zhang Z, Wang ZG |
78 - 86 |
MBE growth mode and C incorporation of GeC epilayers on Si(001) substrates using an arc plasma gun as a novel C source Okinaka M, Hamana Y, Tokuda T, Ohta J, Nunoshita M |
87 - 99 |
Gas flow effect on global heat transport and melt convection in Czochralski silicon growth Kalaev VV, Evstratov IY, Makarov YN |
100 - 105 |
MOCVD growth of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications Lee JJ, Mawst LJ, Botez D |
106 - 120 |
GaN nanocrystals from oxygen and nitrogen-based precursors Kisailus D, Choi JH, Lange FF |
121 - 127 |
Seed-free growth of (111) oriented CdTe and CdZnTe crystals by solid-state recrystallization Hassani S, Lusson A, Tromson-Carli A, Triboulet R |
128 - 143 |
Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy Song JS, Chang JH, Oh DC, Kim JJ, Cho MW, Makino H, Hanada T, Yao T |
144 - 148 |
Growth of nanoscale InGaN self-assembled quantum dots Ji LW, Su YK, Chang SJ, Wu LW, Fang TH, Chen JF, Tsai TY, Xue QK, Chen SC |
149 - 158 |
A new liquid-source version of liquid phase electroepitaxy Gevorkyan VA |
159 - 162 |
Growth and spectroscopic properties of Er3+/Yb3+: LaCa4O(BO3)(3) crystals Lu Y, Hu ZS, Lin ZB, Wang GF |
163 - 166 |
The dependence of emission spectra of rare earth ion on the band-gap energy of MgxZn1-xO alloy Zhao DX, Liu YC, Shen DZ, Zhang JY, Lu YM, Fan XW |
167 - 171 |
Growth and spectral properties of Nd3+: KLa(WO4)(2) crystal Han XM, Wang GF |
172 - 175 |
Microstructure and magnetization of single-crystal perovskite manganites nanowires prepared by hydrothermal method Zhu DL, Zhu H, Zhang YH |
176 - 178 |
Growth of large birefringent YVO4 crystal Wu SF, Wang GF, Xie JL, Wu XQ, Li GS |
179 - 185 |
Effects of RF power on properties of ZnO thin films grown on Si(001) substrate by plasma enhanced chemical vapor deposition Li BS, Liu YC, Shen DZ, Zhang JY, Lu YM, Fan XW |
186 - 190 |
High-quality [100] and [110] YBa2Cu3O7-delta films for Josephson tunnelling Kim SJ, Grison X, Passerieux G, Ayache J, Lesueur J, Lalu F |
191 - 194 |
Growth and spectroscopic properties of Cr3+-doped LaSc3(BO3)(4) Long XF, Wang GF, Han TPJ |
195 - 200 |
Multi-morphology PbS: frame-film structures, twin nanorods, and single-crystal films prepared by a polymer-assisted solvothermal method Yu DB, Wang DB, Zhang SY, Liu XM, Qian YT |
201 - 207 |
Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(100) substrate Lee JS, Kang MI, Kim S, Lee MS, Lee YK |
208 - 215 |
Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Kimoto T, Hirao T, Nakazawa S, Shiomi H, Matsunami H |
216 - 221 |
Bulk crystal growth of cubic silicon carbide by sublimation epitaxy Furusho T, Sasaki M, Ohshima S, Nishino S |
222 - 229 |
Growth of La1-xSr1+xMnO4 single crystals and characterization by scattering techniques Reutler P, Friedt O, Buchner B, Braden M, Revcolevschi A |
230 - 239 |
Effect of wetting of melt against die surface on the edge-defined film-fed growth of oxide crystals Kobayashi M, Tsukada T, Hozawa M |
240 - 244 |
Crystal growth and properties of Ca3NbGa3Si2O14 single crystals Wang ZM, Cheng XF, Yuan DR, Pan LH, Guo SY, Xu D, Lv MK |
245 - 250 |
Quantitative analysis of YIG, YFeO3 and Fe3O4 in LHPG-grown YIG rods Chen JC, Hu CC |
251 - 261 |
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films Hausmann DM, Gordon RG |
262 - 274 |
MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl-4(CH3CN)W((NPr)-Pr-i) Bchir OJ, Johnston SW, Cuadra AC, Anderson TJ, Ortiz CG, Brooks BC, Powell DH, McElwee-White L |
275 - 282 |
A study on the periodicity of periodic poled lithium niobate crystals growth by the off-center Czochralski technique Argiolas N, Bazzan M, Sada C |
283 - 293 |
theta- to alpha-phase transformation subsystem induced by alpha-Al2O3-seeding in boehmite-derived nano-sized alumina powders Yen FS, Lo HS, Wen HL, Yang RJ |
294 - 300 |
Growth of hex-pod-like Cu2O whisker under hydrothermal conditions Chen ZZ, Shi EW, Zheng YQ, Li WJ, Xiao B, Zhuang JY |
301 - 308 |
Solidification and thermal behaviour of binary organic eutectic and monotectic; succinonitrile-pyrene system Rai US, Pandey P |
309 - 315 |
Studies on the growth and characterization of p-hydroxyacetophenone single crystals Vijayan N, Babu RR, Gunasekaran M, Gopalakrishnan R, Kumaresan R, Ramasamy P, Lan CW |
316 - 320 |
Synthesis, growth and characterization of nonlinear optical material: L-arginine fluoride Hameed ASH, Anandan P, Jayavel R, Ramasamy P, Ravi G |
321 - 330 |
Morphological study of magnesium hydroxide nanoparticles precipitated in dilute aqueous solution Henrist C, Mathieu JP, Vogels C, Rulmont A, Cloots R |
331 - 334 |
Large-scale synthesis of (Bi(Bi2S3)(9)I-3)(0.667) submicrometer needle-like crystals via a novel polyol route Shen GZ, Chen D, Tang KB, Huang LY, Qian YT |
335 - 340 |
Effect of a magnetic field on the surface topography of L-alanine crystals Guzman LA, Ogawa K, Suzuki E, Shimizu K |
341 - 344 |
Solution growth of an ultrasoft X-ray spectroscopy organic crystal hexadecyl hydrogen maleate (HHM) Lin SK, Li LT, Chen JZ, Chen Y |
345 - 353 |
Experimental and numerical studies on temperature and flow fields in crystal growth from phosphoric acid solutions Barz RU, Grassl M |
354 - 362 |
Process from monodispersion to regular aggregation in Duck Cu, Zn superoxide dismutase crystallization observed by atomic force microscopy Li GP, Li JW, Bai CL, Wang DC |
363 - 371 |
Prediction of surface properties of metals from the law of corresponding states Digilov RM |
372 - 380 |
Clathrate hydrate formation at liquid/liquid interface under shear water flow Mochizuki T |
381 - 387 |
HRTEM Study of yttrium oxide particles in ODS steels for fusion reactor application Klimiankou M, Lindau R, Moslang A |
388 - 390 |
Comments on "Phase equilibria in the pseudo-binary systems LiF-CaAlF5 and LiF-SrAlF5" [J. Crystal Growth 235 (2002) 596] Klimm D, Reiche P |