Journal of Crystal Growth

Journal of Crystal Growth, Vol.258, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (29 articles)

1 - 13	Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces Pimpinelli A, Cadoret R, Gil-Lafon E, Napierala J, Trassoudaine A
14 - 25	Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy Gil-Lafon E, Napierala J, Pimpinelli A, Cadoret R, Trassoudaine A, Castelluci D
26 - 33	Overgrowth on InP corrugations for 1.55 mu m DFB LDs by reduction of carrier gas flow in LPMOCVD Park SW, Moon CK, Kang JH, Kim YK, Hwang EH, Koo BJ, Kim DY, Song JI
34 - 40	Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) Zhang BS, Wu M, Shen XM, Chen J, Zhu JJ, Liu JP, Feng G, Zhao DG, Wang YT, Yang H
41 - 48	Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy Oyama Y, Kochiya T, Suto K, Nishizawa JI
49 - 57	A one-dimensional model to predict the growth conditions of InxGa1-xAs alloy crystals grown by the traveling liquidus-zone method Nakamura H, Hanaue Y, Kato H, Kinoshita K, Yoda S
58 - 64	Dislocation-free Czochralski Si crystal growth without. a thin neck: dislocation behavior due to incomplete seeding Taishi T, Huang XM, Yonenaga I, Hoshikawa K
65 - 74	Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Dwikusuma F, Mayer J, Kuech TF
75 - 83	Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers Preble EA, Miraglia PQ, Roskowski AM, Vetter WM, Dudley M, Davis RF
84 - 88	Critical layer thickness enhancement of InAs overgrowth on porous GaAs Beji L, Ismail B, Sfaxi L, Hassen F, Maaref H, Ben Ouada H
89 - 99	Effect of anneal temperature on GaN nucleation layer transformation Lada M, Cullis AG, Parbrook PJ
100 - 105	Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal Li HQ, Chen XL, Ni DQ, Wu X
106 - 112	Solvothermal synthesis of Sb2S3 nanowires on a large scale Hu HM, Mo MS, Yan BJ, Zhang XJ, Li QW, Yu WC, Qian YT
113 - 122	Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates Nishio J, Hasegawa M, Kojima K, Ohno T, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Arai K
123 - 129	Studies on single- and multi-layer InAsN quantum dots grown by solid source molecular beam epitaxy Sun ZZ, Yoon SF, Chuin YK
130 - 134	High-quality ZnO/GaN/Al2O3 heteroepitaxial structure grown by LP-MOCVD Zhao BJ, Yang HJ, Du GT, Miao GQ, Zhang YT, Gao ZM, Yang TP, Wang JZ, Li WC, Ma Y, Yang XT, Liu BY, Liu DL, Fang XJ
135 - 140	Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using ditertiarybutylselenide as a precursor Al Bayaz A, Giani A, Al Khalfioui M, Foucaran A, Pascal-Delannoy F, Boyer A
141 - 148	Annealing studies on CBD grown US thin films Metin H, Esen R
149 - 157	Prismatic faces of KDP crystal, kinetic and mechanism of growth from solutions Alexandru HV, Antohe S
158 - 162	Effects of organic additives on hydrothermal zirconia nanocrystallites Jiao XL, Chen DR, Xiao LH
163 - 167	Influence of magnetic field on the morphology of the andrographolide crystal from supercritical carbon dioxide extraction-crystallization Chen KX, Zhang XY, Pan J, Zhang WC, Yong J, Yin WH
168 - 175	Explaining the formation of thin ice crystal plates with structure-dependent attachment kinetics Libbrecht KG
176 - 180	Photochemical synthesis of Au and Ag nanowires on a porous aluminum oxide template Zhao WB, Zhu JJ, Chen HY
181 - 187	Modeling of ammonothermal growth of nitrides Chen QS, Prasad V, Hu WR
188 - 196	Morphological instabilities during growth of a rough interface: AFM observations of cobbles on the (0001) face of synthetic quartz crystals Kawasaki M, Onuma K, Sunagawa I
197 - 203	Growth of cubic crystals of cobalt-hexacyanoferrate under the octadecyl amine monolayer Choudhury S, Dey GK, Yakhmi JV
204 - 210	Dependence of growth rate on initial crystal size Zekic AA, Mitrovic MM
211 - 222	Vibroconvective mixing applied to vertical Bridgman growth Zawilski KT, Claudia M, Custodio C, DeMattei RC, Feigelson RS
223 - 223	A phase field model with electric current (vol 247, pg 587, 2003) Brush LN