Journal of Crystal Growth

Journal of Crystal Growth, Vol.260, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (40 articles)

1 - 6	Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy Yamauchi S, Goto Y, Hariu T
7 - 12	Temperature influence on the growth of gallium nitride by HVPE in a mixed H-2/N-2 carrier gas Trassoudaine A, Cadoret R, Gil-Lafon E
13 - 17	Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface Huang JS, Chen Z, Luo XD, Xu ZY, Ge WK
18 - 22	Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study Borgstrom M, Deppert K, Samuelson L, Seifert W
23 - 27	Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD Jiang L, Lin T, Wei X, Wang GH, Zhang GZ, Zhang HB, Ma XY
28 - 42	Three-dimensional oscillatory flow in a thin annular pool of silicon melt Li YR, Imaishi N, Azami T, Hibiya T
43 - 49	On the chloride vapor-phase epitaxy growth of GaN and its characterization Varadarajan E, Puviarasu P, Kumar J, Dhanasekaran R
50 - 53	Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy Chen CL, Chen NF, Liu LF, Li YL, Wu JL
54 - 62	Resistivity control in unintentionally doped GaN films grown by MOCVD Wickenden AE, Koleske DD, Henry RL, Twigg ME, Fatemi M
63 - 66	Surfactant-free route to hexagonal CdS nanotubes under ultrasonic irradiation in aqueous solution at room temperature Shao MW, Wu ZC, Gao F, Ye Y, Wei XW
67 - 72	Crystal growth of GaN by ammonothermal method Yoshikawa A, Ohshima E, Fukuda T, Tsuji H, Oshima K
73 - 78	Behaviors of AlxGa1-xN (0.5 <= x <= 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films Gong JR, Huang CW, Tseng SF, Lin TY, Lin KM, Liao WT, Tsai YL, Shi BH, Wang CL
79 - 84	The growth mechanism of GaN grown by hydride vapor phase epitaxy in N-2 and H-2 carrier gas Liu HP, Tsay JD, Liu WY, Guo YD, Hsu JT, Chen IG
85 - 90	Room-temperature ferromagnetism of (Ga,Mn)N films: effects of Ga flux and growth temperature Huh KS, Ham MH, Jeong MC, Myoung JM
91 - 101	Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si : H thin films Chen H, Gullanar MH, Shen WZ
102 - 108	Controlled growth of high-quality poly-silicon thin films with huge grains on glass substrates using an excimer laser Zhang FM, Liu XC, Ni G, Du YW
109 - 114	The grain size effec of the Pb(Zr0.45Ti0.55)O-3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process Hu SH, Hu GJ, Meng XJ, Wang GS, Sun JL, Guo SL, Chu JH, Dai N
115 - 117	Solvo-thermal synthesis of crystalline dinickel phosphide Lu B, Bai YJ, Feng X, Zhao YR, Yang J, Chi JR
118 - 124	The improvement of optical reactivity for TiO2 thin films by N-2-H-2 plasma surface-treatment Miao L, Tanemura S, Watanabe H, Mori Y, Kaneko K, Toh S
125 - 129	Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy Misaki T, Wakahara A, Okada H, Yoshida A
130 - 135	Preparation of large-scale cupric oxide nanowires by thermal evaporation method Huang LS, Yang SG, Li T, Gu BX, Du YW, Lu YN, Shi SZ
136 - 142	Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film Zhou JP, Chai CL, Yang SY, Liu ZK, Song SL, Chen NF
143 - 147	Lithium in-diffusion treatment of thick LiNbO3 crystals by the vapor transport equilibration method Liang X, Xu XW, Chong TC, Yuan SN, Yu FL, Tay YS
148 - 158	Improvement in crystalline quality of Cd1-xZnxTe(x=4%) crystals grown in graphite crucible Garg AK, Srivastava M, Narula RC, Bagai RK, Kumar V
159 - 165	Crystal growth and properties of (Lu,Y)(3)Al5O12 Kuwano Y, Suda K, Ishizawa N, Yamada T
166 - 170	Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M, Fukuda T
171 - 175	Preparation and characterization of Co2+-doped Y3Al5O12 nano-crystal powders by sol-gel technique Sun ZH, Yuan DR, Duan XL, Wei XC, Sun HQ, Luan C, Wang ZM, Shi XZ, Xu D, Lv M
176 - 180	Parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition Zhao Q, Li JC, Zhou H, Wang H, Wang B, Yan H
181 - 185	Femtosecond laser irradiation on YAG and sapphire crystals Jiang CY, Zhou GQ, Xu J, Deng PZ, Gan FX
186 - 190	Plasma preparation on indium-tin-oxide anode surface for organic light emitting diodes Lu HT, Yokoyama M
191 - 200	Microstructure characterisation of ALD-grown epitaxial SnO2 thin films Lu J, Sundqvist J, Ottosson M, Tarre A, Rosental A, Aarik J, Harsta A
201 - 208	Characterization of defects in 3C-silicon carbide crystals Vetter WM, Dudley M
209 - 216	Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography Ohno T, Yamaguchi H, Kuroda S, Kojima K, Suzuki T, Arai K
217 - 222	Synthesis of cubic boron nitride from amorphous boron nitride containing oxide impurity using Mg-Al alloy catalyst solvent Singhal SK, Park JK
223 - 231	Effect of impurities on crystal growth rate of ammonium pentaborate Sahin O, Ozdemir M, Genli N
232 - 242	Direct observation of the growth of gibbsite crystals by atomic force microscopy Freij SJ, Parkinson GM, Reyhani MM
243 - 254	Chemical composition of a binary dilute solid solution during growth from its melt: effect of kink kinetics Kitamura M, Matsumoto N
255 - 262	A simple mixed surfactant route for the preparation of noble metal dendrites Zheng XW, Zhu LY, Wang XJ, Yan AH, Xie Y
263 - 276	Improved radial segregation via the destabilizing vertical Bridgman configuration Sonda P, Yeckel A, Daoutidis P, Derby JJ
277 - 285	On astigmatism of multi-beam optical stress sensor mounted at large incident angle Jiang JB, Hwang HD, Lee HS, Kim BJ, Bong K, Yoon EJ