Journal of Crystal Growth

Journal of Crystal Growth, Vol.210, No.1-3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (83 articles)

1 - 6	Analysis of grown-in defects in Czochralski Si Itsumi M
7 - 14	Life cycle of grown-in defects in silicon as observed by IR-LST Kissinger G, Vanhellemont J
15 - 19	TEM observation of grown-in defects in CZ and epitaxial silicon wafers detected with optical shallow defect analyzer Minowa K, Takeda K, Tomimatsu S, Umemura K
20 - 25	Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometer Nakai K, Hasebe M, Ohta K, Ohashi W
26 - 30	Investigation on grown-in defects in CZ-Si crystal under slow pulling rate Furukawa J, Tanaka H, Nakada Y, Ono N, Shiraki H
31 - 35	Accuracy of differential method to distinguish crystal originated particles from light point defects in Czochralski-grown silicon wafers Shimoi N, Kurokawa M, Tanabe A, Koizumi N, Matsushita Y
36 - 39	Photoconductivity characterization of silicon wafer mirror-polishing subsurface damage related to gate oxide integrity Ogita Y, Kobayashi K, Daio H
40 - 44	Evaluation of surface defects on SIMOX and their influences on device characteristics Naruoka H, Iwamatsu T, Tanaka T, Hattori N, Ipposhi T, Yamamoto H, Mashiko Y, Sudo M, Nakai T
45 - 48	Concentration of point defects changed by thermal stress in growing CZ silicon crystal: effect of the growth rate Tanahashi K, Kikuchi M, Higashino T, Inoue N, Mizokawa Y
49 - 53	Simulation of point defect distributions in silicon crystals during melt-growth Nakamura K, Saishoji T, Tomioka J
54 - 59	Molecular dynamics analysis on diffusion of point defects Kakimoto K, Umehara T, Ozoe H
60 - 64	Uniaxial strain observed in solid/liquid interface during crystal growth from melted Si: a molecular dynamics study Nishihira K, Munetoh S, Motooka T
65 - 68	Change in shape of oxygen precipitate grown by thermal annealing Sakai K, Yamagami T, Ojima K
69 - 73	Characterization of defects in annealed Czochralski-grown silicon wafers by photoluminescence method Yamamoto T, Nishihara K
74 - 79	FT-IR study of electron- or proton-irradiated Si crystals for solar cells Nagai N, Ishida H, Hisamatsu T, Aburaya T, Matsuda S
80 - 84	Thermal behavior of He-irradiation-induced defects in silicon Nakano Y, Ishiko M, Tadano H, Myler U, Simpson P
85 - 89	Self-formation of ultra small structures on vicinal Si substrates for nano-device array Hanajiri T, Sugano T
90 - 93	Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafers Ikeda K, Sekiguchi T, Ito S, Takebe M, Suezawa M
94 - 97	Analysis of platelet distribution in H ion-implanted silicon Iwata H, Takagi M, Tokuda Y, Imura T
98 - 101	Characterization of SOI wafers by X-ray CTR scattering Shimura T, Hosoi T, Umeno M
102 - 106	Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope Yamada M, Chu T
107 - 111	A study of interface states of directly bonded silicon-on-insulator structures Buldygin SA, Golod SV, Kamaev GN, Skok EM
112 - 115	Direct observation of electrically harmful surface defects of Si wafer immersed in slightly Cu-contaminated water Kobayashi T, Uchiyama I, Kimura A, Oka S, Kitagawara Y
116 - 121	Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopy Sandhu A, Ogikubo T, Goto H, Csapo V, Pavelka T
122 - 127	Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stress Kamiura Y, Fukuda K, Yamashita Y
128 - 131	Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon Yoshida M, Kamiura Y, Tsuruno R, Takahashi M, Tomokage H
132 - 136	The study of Pt depth profile in semiconductors using cyclotron-produced radioisotopes Yagi T, Nagano A, Nishihara Y, Shimizu T
137 - 142	Subtracted Auger electron spectra of heavily doped transition-metal impurities in Si Abe S, Nakayama H, Nishino T, Ohta H, Iida S
143 - 150	TEM assessment of GaN epitaxial growth Brown PD
151 - 156	Recent advances in defect-selective etching of GaN Weyher JL, Brown PD, Rouviere JL, Wosinski T, Zauner ARA, Grzegory I
157 - 161	Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substrates Kang JY, Ogawa T
162 - 166	Structural analysis of GaN layers with columnar structures grown by hydrogen-assisted ECR-MBE Araki T, Chiba Y, Nanishi Y
167 - 171	Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffraction Zandbergen HW, Jansen J, Zauner ARA, Weyher JL
172 - 176	Residual strain in annealed GaAs single-crystal wafers as determined by scanning infrared polariscopy, X-ray diffraction and topography Herms M, Fukuzawa M, Melov VG, Schreiber J, Mock P, Yamada M
177 - 181	Analysis of peculiar structural defects created in GaAs by diffusion of copper Frigeri C, Weyher JL, Muller S, Hiesinger P
182 - 186	Cleavage of thin films for X-HREM study of interface quality in heterostructures Vorob'ev AB, Gutakovsky AK, Prinz VY
187 - 192	X-ray scattering topographic observation of ZnSe and ZnTe bulk crystals Shinbara M, Suzuki Y, Chikaura Y, Kii H
193 - 197	Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiation Kumaresan R, Gopalakrishnan R, Babu SM, Ramasamy P, Zaumseil P, Ichimura M
198 - 202	Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman Martinez O, Avella M, de la Puente E, Jimenez J, Gerard B, Gil-Lafon E
203 - 206	Laser scattering experiments in VCz GaAs Naumann M, Donecker J, Neubert M
207 - 211	Quantitative topographic assessment of Cu incorporation in GaAs Baeumler M, Stibal R, Stolz W, Steinegger T, Jurisch M, Maier M, Jantz W
212 - 215	Laser scattering defects in MBE-grown GaAs epitaxial layers related to dislocations in semi-insulating substrates Kiyama M, Mukai H, Yoshida H, Sakurada T, Nakai R
216 - 219	Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopies Kurai S, Yamada Y, Taguchi T
220 - 225	Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layers Avella M, de la Puente E, Jimenez J, Castaldini A, Cavallini A, Polenta L
226 - 229	Microscopic photoluminescence evaluation of bright spots in Fe-doped InP wafers Wakahara M, Uchida M, Warashina M, Oda O, Tajima M
230 - 233	AFM and photoluminescence characterization of defects in the mirror-polished ZnSe bulk crystals and MBE-grown homoepitaxial layers Kishino M, Taguchi T
234 - 237	Relation between light scattered intensity and Raman shift in neighborhood of dislocation walls in ZnSe crystals Yukawa Y, Tsuru T, Sakai K, Ogawa T
238 - 241	Spectroscopic discrimination of non-radiative centers in quantum wells by two wavelength excited photoluminescence Ocampo JM, Kamata N, Hoshino K, Hirasawa M, Yamada K, Nishioka M, Arakawa Y
242 - 246	Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS Ishii H, Shinagawa T, Tanaka S, Okumura T
247 - 250	Laplace defect spectroscopy for recognition of deep-level fine structures Kang JY, Zhan HH, Huang QS
251 - 254	Stoichiometry and Te related defect in n-Al0.3Ga0.7As Murai A, Oyama Y, Nishizawa J
255 - 259	Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements Fukuyama A, Akashi Y, Suemitsu M, Ikari T
260 - 263	Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopy Tokuda Y, Kamiya K, Okumura T
264 - 267	Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells Khan A, Yamaguchi M, Takamoto T, de Angelis N, Bourgoin JC
268 - 272	Investigations on the low-energy proton-induced defects on Ti/n-GaAs Schottky barrier diode parameters Jayavel P, Kumar J
273 - 277	Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films Emtsev VV, Davydov VY, Lundin VV, Poloskin DS, Aderhold J, Klausing H, Mistele D, Rotter T, Stemmer J, Fedler F, Semchinova O, Graul J
278 - 282	Complex defects in electron-irradiated ZnS Shono Y, Oka T
283 - 287	Effect of C/B sequential implantation on the B acceptors in 4H-SiC Nakano Y, Kachi T, Tadano H, Malhan RK
288 - 291	Ytterbium-induced Jahn-Teller states in Pb1-xGexTe alloys Skipetrov EP, Chernova NA, Slyn'ko EI
292 - 295	Gallium-induced defect states in Pb1-xGexTe alloys Skipetrov EP, Zvereva EA, Skipetrova LA, Belousov VV, Mousalitin AM
296 - 302	Near-field photocurrent spectroscopy of laser diode devices Tomm JW, Gunther T, Lienau C, Gerhardt A, Donecker J
303 - 306	Comparison between standard and near-field cathodoluminescence Heiderhoff R, Sergeev OV, Liu YY, Phang JCH, Balk LJ
307 - 312	Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes Rechenberg I, Klehr A, Richter U, Erfurth W, Bugge F, Klein A
313 - 317	Reliability and degradation mechanisms of InGa(Al)As/GaAs DQW high-power diode lasers Kreutz EW, Wiedmann N, Jandeleit J, Hoffmann D, Loosen P, Poprawe R
318 - 322	Watching chips work: picosecond hot electron light emission from integrated circuits Kash JA, Tsang JC
323 - 330	Can physical analysis aid in device characterization? Chan DSH, Chim WK, Phang JCH, Liu YY, Ng TH, Xiao H
331 - 340	Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices Zanoni E, Meneghesso G, Menozzi R
341 - 345	Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction Toda A, Ikarashi N, Ono H
346 - 350	High-speed mapping of grown-in defects and their influence in large-area silicon photovoltaic devices Sopori B, Wei C, Yi Z, Madjdpour J
351 - 355	Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding Vainer BG, Kamaev GN, Kurishev GL
356 - 360	Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuits Vainer BG
361 - 365	Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics Astafiev OV, Kalinushkin VP, Yuryev VA
366 - 369	Classification of etch pits at silicon wafer surface using image-processing instrument Akatsuka M, Sueoka K, Yamamoto T
370 - 374	A quantitative approach to Makyoh (magic-mirror) topography Riesz F
375 - 378	Influence of distributed defects on the photoelectric characteristics of a large-area device Sopori B, Chen W
379 - 383	Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer Yoshida H, Nakanishi R, Kishino S
384 - 387	Effects of an inhomogeneous carrier concentration depth profile on deep-level transient spectroscopy measurements Ito A, Tokuda Y
388 - 394	Analysis of trace Co in synthetic diamonds using synchrotron radiation excited X-ray fluorescence analysis Hayakawa S, Jia XP, Wakatsuki M, Gohshi Y, Hirokawa T
395 - 400	Synchrotron-based impurity mapping McHugo SA, Thompson AC, Flink C, Weber ER, Lamble G, Gunion B, MacDowell A, Celestre R, Padmore HA, Hussain Z
401 - 407	Nano-scale defect analysis by BEEM von Kanel H, Meyer T
408 - 415	Defects and their charge imaging on semiconductor surfaces by noncontact atomic force microscopy and spectroscopy Morita S, Abe M, Yokoyama K, Sugawara Y
416 - 420	Imaging of hydrogen distribution on solid surfaces by desorption spectroscopy Ueda K
VIII - VIII	Defects - Recognition imaging and physics in semiconductors 1999 -Proceedings of the eighth international conference on defects -Recognition, imaging and physics in semiconductors - Narita, Japan, September 15-18, 1999 - Preface Ogawa T, Tajima M