1 - 6 |
Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film Park YJ, Oh CS, Yeom TH, Yu YM |
7 - 12 |
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma Hu ZH, Liao XB, Diao HW, Kong GL, Zeng XB, Xu YY |
13 - 16 |
Assessment of Li-Ga-N ternary system and GaN single crystal growth Wang WJ, Chen XL, Song YT, Yuan WX, Cao YG, Wu X |
17 - 20 |
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals Zhou XL, Zhao YW, Sun NF, Yang GY, Xu YQ, Sun TN |
21 - 25 |
Heteroepitaxial growth of GaSb on Si(001) substrates Akahane K, Yamamoto N, Gozu S, Ohtani N |
26 - 30 |
Fast characterisation of InAs quantum dot structures using AFM Basnar B, Hirner H, Gornik E, Strasser G |
31 - 35 |
Mn implanted GaAs by low energy ion beam deposition Song SL, Chen NF, Zhou JP, Yin ZG, Li YL, Yang SY, Liu ZK |
36 - 47 |
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains Hartmann JM, Clavelier L, Jahan C, Holliger P, Rolland G, Billon T, Defranoux C |
48 - 52 |
Fabrication of high-performance 370 nm ultraviolet light-emitting diodes Wang HX, Li HD, Lee YB, Sato H, Yamashita K, Sugahara T, Sakai S |
53 - 57 |
Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells Liu JP, Jin RQ, Zhu JJ, Zhang JC, Wang JF, Wu M, Chen J, Wang YT, Yang H |
58 - 63 |
Epitaxial growth of co-doped Eu and Sm in alpha-Zn0.05Sr0.95S on (001)MgO substrate using alpha-MnS buffer layer Chen C, Teo KL, Chong TC, Wu YH, Osipowicz T, Rahman MA |
64 - 69 |
The role of morphology in the relaxation of strain in InGaAs/GaAs Rodriguez BP, Millunchick JM |
70 - 78 |
Morphology of ZnO grown by MOCVD on sapphire substrates Munuera C, Zuniga-Perez J, Rommeluere JF, Sallet V, Triboulet R, Soria F, Munoz-Sanjose V, Ocal C |
79 - 85 |
Low thermal budget selective epitaxial growth for formation of elevated source/drain MOS transistors Nakahata T, Sugihara K, Abe Y, Ozeki T |
86 - 91 |
Optical properties of potentially modulated multi-quantum well solar cell structures Shiotsuka N, Takeda T, Okada Y |
92 - 97 |
Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties Gao Q, Tan HH, Jagadish C, Sun BQ, Gal M, Ouyang L, Zou J |
98 - 103 |
Wet chemical cleaning process of GaAs substrate for ready-to-use Song JS, Choi YC, Seo SH, Oh DC, Cho MW, Yao T, Oh MH |
104 - 109 |
Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping Zheng XH, Chen H, Li YK, Huang Q, Zhou JM |
110 - 115 |
Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering Jeong SH, Kim IS, Kim SS, Kim JK, Lee BT |
116 - 122 |
Solid-source boron doping of float-zoned silicon Ciszek TF |
123 - 127 |
Optimized growth of BGaAs by molecular beam epitaxy Groenert ME, Averbeck R, Hosler W, Schuster M, Riecherta H |
128 - 133 |
1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition Huang KF, Hsieh TP, Yeh NT, Ho WJ, Chyi JI, Wu MC |
134 - 138 |
Electrochemical In2O3 single crystal growth Imanaka N, Masui T, Kim YW, Adachi GY |
139 - 149 |
The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy Losurdo M, Giuva D, Bruno G, Huang S, Kim TH, Brown AS |
150 - 158 |
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In Tavernier PR, Margalith T, Williams J, Green DS, Keller S, DenBaars SP, Mishra UK, Nakamura S, Clarke DR |
159 - 164 |
High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission Liu Y, Egawa T, Ishikawa H, Jiang H, Zhang BJ, Hao MS, Jimbo T |
165 - 171 |
Optical and mechanical properties of nanocrystalline aluminum oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition Xiao W, Jiang X |
172 - 177 |
Microstructural origin of leakage current in GaN/InGaN light-emitting diodes Cao XA, Teetsov JA, Shahedipour-Sandvik F, Arthur SD |
178 - 183 |
Grain growth studies of thin Cu(In, Ga)Se-2 films Schlenker T, Valero ML, Schock HW, Werner JH |
184 - 191 |
Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films Sienz S, Gerlach JW, Hoche T, Sidorenko A, Mayerhofer TG, Benndorf G, Rauschenbach B |
192 - 200 |
Vapour pressure and heat capacities of metal organic precursors, Y(thd)(3) and Zr(thd)(4) Fulem M, Ruzicka K, Ruzicka V, Simecek T, Hulicius E, Pangrac J |
201 - 207 |
Top seeded solution growth of KHo(WO4)(2) single crystals Majchrowski A, Borowiec MT, Michalski E |
208 - 215 |
Growth and scintillation characteristics of CeF3, PrF3 and NdF3 single crystals Shimamura K, Villora EG, Nakakita S, Nikl M, Ichinose N |
216 - 222 |
Large-scale growth and end-to-end assembly of silver nanorods by PVP-directed polyol process Chen DL, Gao L |
223 - 231 |
Formation and growth of NbSe3 topological crystals Tsuneta T, Tanda S |
232 - 236 |
Synthesis and characterization of Mn3O4 nanoparticles Chang YQ, Xu XY, Luo XH, Chen CP, Yu DP |
237 - 245 |
Numerical study of the ZnO growth by MOCVD Tena-Zaera R, Zuniga-Perez J, Martinez-Tomas C, Munoz-Sanjose V |
246 - 252 |
Fabrication, characterization and Raman study of anatase TiO2 nanorods by a heating-sol-gel template process Miao L, Tanemura S, Toh S, Kaneko K, Tanemura M |
253 - 259 |
Micro-pulling-down growth and characterization of Tb3-xTmxAl5O12 fiber crystals for Faraday rotator applications Sato H, Chani VI, Yoshikawa A, Kagamitani Y, Machida H, Fukuda T |
260 - 265 |
Growth of circle divide 4'' Li2B4O7 single crystals by multi-crucible Bridgman method Xu JY, Fan SJ, Lu BL |
266 - 270 |
Effect of substrate temperature on CoSi2 formation by a metal vapor vacuum arc ion source He Y, Feng JY, Li WZ |
271 - 277 |
Characterization and leakage current density of radio frequency magnetron sputtered nanocrstalline SrTiO3 thin films Wang MC, Hsiao FY, Wu NC |
278 - 283 |
In situ growth of SiC nanowires on RS-SiC substrate(s) Yang W, Araki H, Hu QL, Ishikawa N, Suzuki H, Noda T |
284 - 289 |
Float zone growth of Nd : GdVO4 single crystals along [110] direction and their laser performance Higuchi M, Sagae H, Kodaira K, Ogawa T, Wada S, Machida H |
290 - 296 |
Photoluminescence characteristics of pulsed laser deposited Y2-xGdxO3 : Eu3+ thin film phosphors Bae JS, Shim KS, Kim SB, Jeong JH, Yi SS, Park JC |
297 - 301 |
Crystallization behavior of Li+-doped SiO2-TiO2 films prepared by sol-gel dip coating Zhou F, Liang KM, Wang GL, Shao H, Hu AM |
302 - 306 |
Low-temperature fabrication of Pb(Zr0.52Ti0.48)O-3 films using a new chemical solution deposition method without post-annealing Liu JS, Zhang SR, Yang CT, Zhou JL |
307 - 311 |
Preparation and characterization of multi-coating PZT thick films by sol-gel process Hu SH, Meng XJ, Wang GS, Sun JL, Li D |
312 - 315 |
Properties of Nd-doped Bi4Ti3O12 thin films grown by metalorganic solution decomposition Yang CH, Wang Z, Zhai JP, Ma GP, Sun XQ, Yi XJ, Han JR |
316 - 319 |
Easy synthesis of TiC nanocrystallite Feng X, Bai YJ, Lu B, Wang CG, Liu YX, Geng GL, Li L |
320 - 326 |
Optical, thermal and defect studies on PbWO4 single crystals grown by the Czochralski method Ganesamoorthy S, Bhaumik I, Karnal AK, Wadhawan VK |
327 - 333 |
Quality improvement of ZnO layer on LT-grown ZnO layer/Si(111) through a two-step growth using an RF magnetron sputtering Jeong SH, Kim SI, Kim JK, Lee BT |
334 - 338 |
Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots Saint-Girons G, Lemaitre A, Navarro-Paredes V, Patriarche G, Rao EVK, Sagnes I, Theys B |
339 - 345 |
Crystal growth and characterization of titanium-doped near-stoichiometric LiNbO3 Nakamura M, Takekawa S, Kurimura S, Kitamura K, Nakajima H |
346 - 350 |
Crystal growth and spectrum characteristics of GdAl3(BO3)(4): TM3+ crystal Jia GH, Tu CY, Li JF, Zhu ZJ, Wu BC |
351 - 356 |
Structural and electrical characteristics of Bi3.5SM0.5Ti3O12 thin films on Si(100) Liu WL, Xia HR, Han H, Wang XQ |
357 - 362 |
Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates Su YK, Wu CH, Huang YS, Hsu HP, Chen WC, Hsu SH, Chang SJ |
363 - 368 |
The synthesis of In, In2O3 nanowires and In2O3 nanoparticles with shape-controlled Zhang YJ, Ago H, Liu J, Yumura M, Uchida K, Ohshima S, Iijima S, Zhu J, Zhang XZ |
369 - 378 |
Mass transfer in A1N crystal growth at high temperatures Noveski V, Schlesser R, Mahajan S, Beaudoin S, Sitar Z |
379 - 384 |
Long-time scale morphological dynamics near the onset of instability during directional solidification of an alloy Lan CW, Shih CJ, Hsu WT |
385 - 391 |
Nano-scale grain growth inhibited by reducing grain boundary energy through solute segregation Liu F, Kirchheim R |
392 - 399 |
Overall effects of initial melt undercooling, solute segregation and grain boundary energy on the grain size of as-solidified Ni-based alloys Liu F, Yang GC, Kirchheim R |
400 - 408 |
Syntheses and structures of sodium aluminodiphosphonates with different morphologies (diphosphonate=1-hydroxyethylidenediphosphonate) Wu ZB, Liu ZM, Tian P, Yang Y, Xu L, Song HB, Bao XH, Liu XM, Liu XC |
409 - 416 |
Prediction of solubility of lysozyme in lysozyme-NaCl-H2O system with artificial neural network Zhang XP, Zhang SJ, He XZ |
417 - 423 |
Theory of the von Weimarn rules governing the average size of crystals precipitated from a supersaturated solution Barlow DA, Baird JK, Su CH |
424 - 429 |
Effect of anionic surfactant-polymer complexes on the crystallization of calcium carbonate Wei H, Shen Q, Zhao Y, Zhou Y, Wang DJ, Xu DF |
430 - 437 |
Understanding nucleation of calcium carbonate on gallium oxide using computer simulation Malkaj P, Chrissanthopoulos A, Dalas E |
438 - 444 |
The use of a new ad hoc growth cell with parallel electrodes for the nucleation control of lysozyme Moreno A, Sazaki G |
445 - 451 |
The formation of self-organized regular array microstructure derived from structural anisotropy of phase M solid-solution Yamamoto Y, Sekino T, Kusunose T, Nakayama T, Morimoto Y, Miyazawa S, Niihara K |
452 - 462 |
The effect of tri-junction conditions in droplet solidification Ajaev VS, Davis SH |
463 - 467 |
Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial gamma-Al2O3(001) buffer layer Akai D, Hirabayashi K, Yokawa M, Sawada K, Ishida M |
468 - 471 |
Synthesis and photoluminescence of Pb-9(PO4)(6) nanocrystals Xiu ZL, Lu MK, Gu F, Wang SF, Xu D, Yuan DR |
472 - 482 |
Phase field simulation of non-isothermal free dendritic growth of a binary alloy in a forced flow Lan CW, Shih CJ |
483 - 491 |
Chemical growth of calcium phosphate layers on magnetron sputtered HA films Verestiuc L, Morosanu C, Bercu M, Pasuk I, Mihailescu IN |
492 - 498 |
Molten state and supercooling of lead halides Nitsch K, Cihlar A, Rodova M |