화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.264, No.1-3 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (75 articles)

1 - 6 Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film
Park YJ, Oh CS, Yeom TH, Yu YM
7 - 12 Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
Hu ZH, Liao XB, Diao HW, Kong GL, Zeng XB, Xu YY
13 - 16 Assessment of Li-Ga-N ternary system and GaN single crystal growth
Wang WJ, Chen XL, Song YT, Yuan WX, Cao YG, Wu X
17 - 20 Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
Zhou XL, Zhao YW, Sun NF, Yang GY, Xu YQ, Sun TN
21 - 25 Heteroepitaxial growth of GaSb on Si(001) substrates
Akahane K, Yamamoto N, Gozu S, Ohtani N
26 - 30 Fast characterisation of InAs quantum dot structures using AFM
Basnar B, Hirner H, Gornik E, Strasser G
31 - 35 Mn implanted GaAs by low energy ion beam deposition
Song SL, Chen NF, Zhou JP, Yin ZG, Li YL, Yang SY, Liu ZK
36 - 47 Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
Hartmann JM, Clavelier L, Jahan C, Holliger P, Rolland G, Billon T, Defranoux C
48 - 52 Fabrication of high-performance 370 nm ultraviolet light-emitting diodes
Wang HX, Li HD, Lee YB, Sato H, Yamashita K, Sugahara T, Sakai S
53 - 57 Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
Liu JP, Jin RQ, Zhu JJ, Zhang JC, Wang JF, Wu M, Chen J, Wang YT, Yang H
58 - 63 Epitaxial growth of co-doped Eu and Sm in alpha-Zn0.05Sr0.95S on (001)MgO substrate using alpha-MnS buffer layer
Chen C, Teo KL, Chong TC, Wu YH, Osipowicz T, Rahman MA
64 - 69 The role of morphology in the relaxation of strain in InGaAs/GaAs
Rodriguez BP, Millunchick JM
70 - 78 Morphology of ZnO grown by MOCVD on sapphire substrates
Munuera C, Zuniga-Perez J, Rommeluere JF, Sallet V, Triboulet R, Soria F, Munoz-Sanjose V, Ocal C
79 - 85 Low thermal budget selective epitaxial growth for formation of elevated source/drain MOS transistors
Nakahata T, Sugihara K, Abe Y, Ozeki T
86 - 91 Optical properties of potentially modulated multi-quantum well solar cell structures
Shiotsuka N, Takeda T, Okada Y
92 - 97 Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties
Gao Q, Tan HH, Jagadish C, Sun BQ, Gal M, Ouyang L, Zou J
98 - 103 Wet chemical cleaning process of GaAs substrate for ready-to-use
Song JS, Choi YC, Seo SH, Oh DC, Cho MW, Yao T, Oh MH
104 - 109 Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping
Zheng XH, Chen H, Li YK, Huang Q, Zhou JM
110 - 115 Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering
Jeong SH, Kim IS, Kim SS, Kim JK, Lee BT
116 - 122 Solid-source boron doping of float-zoned silicon
Ciszek TF
123 - 127 Optimized growth of BGaAs by molecular beam epitaxy
Groenert ME, Averbeck R, Hosler W, Schuster M, Riecherta H
128 - 133 1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition
Huang KF, Hsieh TP, Yeh NT, Ho WJ, Chyi JI, Wu MC
134 - 138 Electrochemical In2O3 single crystal growth
Imanaka N, Masui T, Kim YW, Adachi GY
139 - 149 The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy
Losurdo M, Giuva D, Bruno G, Huang S, Kim TH, Brown AS
150 - 158 The growth of N-face GaN by MOCVD: effect of Mg, Si, and In
Tavernier PR, Margalith T, Williams J, Green DS, Keller S, DenBaars SP, Mishra UK, Nakamura S, Clarke DR
159 - 164 High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission
Liu Y, Egawa T, Ishikawa H, Jiang H, Zhang BJ, Hao MS, Jimbo T
165 - 171 Optical and mechanical properties of nanocrystalline aluminum oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition
Xiao W, Jiang X
172 - 177 Microstructural origin of leakage current in GaN/InGaN light-emitting diodes
Cao XA, Teetsov JA, Shahedipour-Sandvik F, Arthur SD
178 - 183 Grain growth studies of thin Cu(In, Ga)Se-2 films
Schlenker T, Valero ML, Schock HW, Werner JH
184 - 191 Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films
Sienz S, Gerlach JW, Hoche T, Sidorenko A, Mayerhofer TG, Benndorf G, Rauschenbach B
192 - 200 Vapour pressure and heat capacities of metal organic precursors, Y(thd)(3) and Zr(thd)(4)
Fulem M, Ruzicka K, Ruzicka V, Simecek T, Hulicius E, Pangrac J
201 - 207 Top seeded solution growth of KHo(WO4)(2) single crystals
Majchrowski A, Borowiec MT, Michalski E
208 - 215 Growth and scintillation characteristics of CeF3, PrF3 and NdF3 single crystals
Shimamura K, Villora EG, Nakakita S, Nikl M, Ichinose N
216 - 222 Large-scale growth and end-to-end assembly of silver nanorods by PVP-directed polyol process
Chen DL, Gao L
223 - 231 Formation and growth of NbSe3 topological crystals
Tsuneta T, Tanda S
232 - 236 Synthesis and characterization of Mn3O4 nanoparticles
Chang YQ, Xu XY, Luo XH, Chen CP, Yu DP
237 - 245 Numerical study of the ZnO growth by MOCVD
Tena-Zaera R, Zuniga-Perez J, Martinez-Tomas C, Munoz-Sanjose V
246 - 252 Fabrication, characterization and Raman study of anatase TiO2 nanorods by a heating-sol-gel template process
Miao L, Tanemura S, Toh S, Kaneko K, Tanemura M
253 - 259 Micro-pulling-down growth and characterization of Tb3-xTmxAl5O12 fiber crystals for Faraday rotator applications
Sato H, Chani VI, Yoshikawa A, Kagamitani Y, Machida H, Fukuda T
260 - 265 Growth of circle divide 4'' Li2B4O7 single crystals by multi-crucible Bridgman method
Xu JY, Fan SJ, Lu BL
266 - 270 Effect of substrate temperature on CoSi2 formation by a metal vapor vacuum arc ion source
He Y, Feng JY, Li WZ
271 - 277 Characterization and leakage current density of radio frequency magnetron sputtered nanocrstalline SrTiO3 thin films
Wang MC, Hsiao FY, Wu NC
278 - 283 In situ growth of SiC nanowires on RS-SiC substrate(s)
Yang W, Araki H, Hu QL, Ishikawa N, Suzuki H, Noda T
284 - 289 Float zone growth of Nd : GdVO4 single crystals along [110] direction and their laser performance
Higuchi M, Sagae H, Kodaira K, Ogawa T, Wada S, Machida H
290 - 296 Photoluminescence characteristics of pulsed laser deposited Y2-xGdxO3 : Eu3+ thin film phosphors
Bae JS, Shim KS, Kim SB, Jeong JH, Yi SS, Park JC
297 - 301 Crystallization behavior of Li+-doped SiO2-TiO2 films prepared by sol-gel dip coating
Zhou F, Liang KM, Wang GL, Shao H, Hu AM
302 - 306 Low-temperature fabrication of Pb(Zr0.52Ti0.48)O-3 films using a new chemical solution deposition method without post-annealing
Liu JS, Zhang SR, Yang CT, Zhou JL
307 - 311 Preparation and characterization of multi-coating PZT thick films by sol-gel process
Hu SH, Meng XJ, Wang GS, Sun JL, Li D
312 - 315 Properties of Nd-doped Bi4Ti3O12 thin films grown by metalorganic solution decomposition
Yang CH, Wang Z, Zhai JP, Ma GP, Sun XQ, Yi XJ, Han JR
316 - 319 Easy synthesis of TiC nanocrystallite
Feng X, Bai YJ, Lu B, Wang CG, Liu YX, Geng GL, Li L
320 - 326 Optical, thermal and defect studies on PbWO4 single crystals grown by the Czochralski method
Ganesamoorthy S, Bhaumik I, Karnal AK, Wadhawan VK
327 - 333 Quality improvement of ZnO layer on LT-grown ZnO layer/Si(111) through a two-step growth using an RF magnetron sputtering
Jeong SH, Kim SI, Kim JK, Lee BT
334 - 338 Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
Saint-Girons G, Lemaitre A, Navarro-Paredes V, Patriarche G, Rao EVK, Sagnes I, Theys B
339 - 345 Crystal growth and characterization of titanium-doped near-stoichiometric LiNbO3
Nakamura M, Takekawa S, Kurimura S, Kitamura K, Nakajima H
346 - 350 Crystal growth and spectrum characteristics of GdAl3(BO3)(4): TM3+ crystal
Jia GH, Tu CY, Li JF, Zhu ZJ, Wu BC
351 - 356 Structural and electrical characteristics of Bi3.5SM0.5Ti3O12 thin films on Si(100)
Liu WL, Xia HR, Han H, Wang XQ
357 - 362 Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates
Su YK, Wu CH, Huang YS, Hsu HP, Chen WC, Hsu SH, Chang SJ
363 - 368 The synthesis of In, In2O3 nanowires and In2O3 nanoparticles with shape-controlled
Zhang YJ, Ago H, Liu J, Yumura M, Uchida K, Ohshima S, Iijima S, Zhu J, Zhang XZ
369 - 378 Mass transfer in A1N crystal growth at high temperatures
Noveski V, Schlesser R, Mahajan S, Beaudoin S, Sitar Z
379 - 384 Long-time scale morphological dynamics near the onset of instability during directional solidification of an alloy
Lan CW, Shih CJ, Hsu WT
385 - 391 Nano-scale grain growth inhibited by reducing grain boundary energy through solute segregation
Liu F, Kirchheim R
392 - 399 Overall effects of initial melt undercooling, solute segregation and grain boundary energy on the grain size of as-solidified Ni-based alloys
Liu F, Yang GC, Kirchheim R
400 - 408 Syntheses and structures of sodium aluminodiphosphonates with different morphologies (diphosphonate=1-hydroxyethylidenediphosphonate)
Wu ZB, Liu ZM, Tian P, Yang Y, Xu L, Song HB, Bao XH, Liu XM, Liu XC
409 - 416 Prediction of solubility of lysozyme in lysozyme-NaCl-H2O system with artificial neural network
Zhang XP, Zhang SJ, He XZ
417 - 423 Theory of the von Weimarn rules governing the average size of crystals precipitated from a supersaturated solution
Barlow DA, Baird JK, Su CH
424 - 429 Effect of anionic surfactant-polymer complexes on the crystallization of calcium carbonate
Wei H, Shen Q, Zhao Y, Zhou Y, Wang DJ, Xu DF
430 - 437 Understanding nucleation of calcium carbonate on gallium oxide using computer simulation
Malkaj P, Chrissanthopoulos A, Dalas E
438 - 444 The use of a new ad hoc growth cell with parallel electrodes for the nucleation control of lysozyme
Moreno A, Sazaki G
445 - 451 The formation of self-organized regular array microstructure derived from structural anisotropy of phase M solid-solution
Yamamoto Y, Sekino T, Kusunose T, Nakayama T, Morimoto Y, Miyazawa S, Niihara K
452 - 462 The effect of tri-junction conditions in droplet solidification
Ajaev VS, Davis SH
463 - 467 Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial gamma-Al2O3(001) buffer layer
Akai D, Hirabayashi K, Yokawa M, Sawada K, Ishida M
468 - 471 Synthesis and photoluminescence of Pb-9(PO4)(6) nanocrystals
Xiu ZL, Lu MK, Gu F, Wang SF, Xu D, Yuan DR
472 - 482 Phase field simulation of non-isothermal free dendritic growth of a binary alloy in a forced flow
Lan CW, Shih CJ
483 - 491 Chemical growth of calcium phosphate layers on magnetron sputtered HA films
Verestiuc L, Morosanu C, Bercu M, Pasuk I, Mihailescu IN
492 - 498 Molten state and supercooling of lead halides
Nitsch K, Cihlar A, Rodova M