Journal of Crystal Growth

Journal of Crystal Growth, Vol.208, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (104 articles)

1 - 10	A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy Bacchin G, Nishinaga T
11 - 17	Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells Friedman DJ, Norman AG, Geisz JF, Kurtz SR
18 - 26	Influence of growth rate on the structure of thick GaN layers grown by HVPE Paskova T, Goldys EM, Yakimova R, Svedberg EB, Henry A, Monemar B
27 - 32	High purity GaSb grown by LPE in a sapphire boat Olvera-Hernandez J, de Anda F, Navarro-Contreras H, Mishurnyi VA
33 - 36	Direct observation of LPE heterogrowth of GaAs on a GaP substrate Tanaka A, Izumi N, Kimura M, Sukegawa T
37 - 41	Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy Kim JW, Son CS, Choi IH, Park YK, Kim YT, Ambacher O, Stutzmann M
42 - 48	A new double crucible technique for LEC growth of In-doped GaAs crystals He J, Kou S
49 - 56	Lattice contraction and electrical conduction of heavily carbon doped AlAs layers grown by atomic layer epitaxy Hirose S, Ibuka H, Yoshida A, Kano N, Hara K, Munekata H, Kukimoto H
57 - 64	Polytypism in epitaxially grown gallium nitride Selke H, Kirchner V, Heinke H, Einfeldt S, Ryder PL, Hommel D
65 - 72	Analysis of Be doping of InGaP lattice matched to GaAs Bettini J, de Carvalho MMG, Cotta MA, Pudenzi MAA, Frateschi NC, Silva A, Cardoso LP, Landers R
73 - 78	Quasi-thermodynamic analysis of MOVPE of AlGaN Lu DC, Duan S
79 - 84	Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(111) multi-quantum wells Pillai MR, Theiring SC, Barnett SA, Wessels BW, Desikan A, Kvam EP
85 - 92	Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor Dauelsberg M, Kadinski L, Makarov YN, Bergunde T, Strauch G, Weyers M
93 - 99	Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 mu m Nakata Y, Mukai K, Sugawara M, Ohtsubo K, Ishikawa H, Yokoyama N
100 - 106	Growth and characterization of GaN single crystals Balkas CM, Sitar Z, Bergman L, Shmagin IK, Muth JF, Kolbas R, Nemanich RJ, Davis RF
107 - 112	Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy Wang HL, Ning D, Zhu HJ, Chen F, Wang H, Wang XD, Feng SL
113 - 116	Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy Almuneau G, Hall E, Mathis S, Coldren LA
117 - 122	GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy Zhao QX, Zsebok O, Sodervall U, Karlsteen M, Willander M, Liu XQ, Chen YD, Lu W, Shen SC
123 - 129	Diffusion of accepters in n-type and semi-insulating InP Tuck B
130 - 136	Surface migration effect and lateral vapor-phase diffusion effect for InGaAsP/InP narrow-stripe selective metal-organic vapor-phase epitaxy Sakata Y, Inomoto Y, Komatsu K
137 - 144	Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition Lee CY, Wu MC, Shiao HP, Ho WJ
145 - 152	Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells Xin HP, Kavanagh KL, Tu CW
153 - 159	Gallium nitride thin layers via a liquid precursor route Puchinger M, Wagner T, Rodewald D, Bill J, Aldinger F, Lange FF
160 - 164	Observation of two independent sources for arsenic carryover Moon Y, Lee TW, Yoon S, Yoo K, Yoon E
165 - 170	Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method Kodama S, Furumura Y, Kinoshita K, Kato H, Yoda S
171 - 178	InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method Nishijima Y, Nakajima K, Otsubo K, Ishikawa H
179 - 182	Unstable composition region in the wurtzite B1-x-yGaxAlyN system Wei CH, Edgar JH
183 - 188	Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer Cheng XC, McGill TC
189 - 196	The morphology and formation mechanism of aluminum nitride nanocrystals synthesized by chemical vapor deposition Wu NC, Tsai MS, Wang MC, Liu HS
197 - 204	Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates Yoon SF, Mah KW, Zheng HQ, Zhang PH
205 - 210	High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be-Zn co-irradiation Guo SP, Luo Y, Lin W, Maksimov O, Tamargo MC, Kuskovsky I, Tian C, Neumark GF
211 - 218	A novel "multi-tube" vapour growth system and its application to the growth of bulk crystals of cadmium telluride Mullins JT, Carles J, Aitken NM, Brinkman AW
219 - 230	In situ studies of Cd1-xZnxTe nucleation and crystal growth Choi BW, Wadley HNG
231 - 236	Luminescent studies of alloy ZnxCd1-xSe quantum dots grown on ZnSe by metalorganic chemical vapor-phase deposition Zhang XB, Hark SK
237 - 247	Characterizations of ZnSe single crystals grown by physical vapor transport Su CH, Dudley M, Matyi R, Feth S, Lehoczky SL
248 - 252	Formation of InSb by annealing Sb2S3-In thin films Nair MTS, Rodriguez-Lazcano Y, Nair PK
253 - 258	Surface reconstruction and crystal structure of MgSe films grown on ZnTe substrates by MBE Wang HM, Chang JH, Hanada T, Arai K, Yao T
259 - 263	Growth of ZnS: Tm thin films by MOCVD Hsu CT
264 - 268	Modified growth of Cd1-xZnxTe single crystals Zhu SF, Zhao BJ, Li QF, Yu FL, Shao SY, Zhu XH
269 - 281	Modeling studies of PVT growth of ZnSe: current status and future course Ramachandran N, Su CH, Lehoczky SL
282 - 288	Study on defects in EMCZ-Si crystal by infrared light scattering tomography Ma MY, Nango N, Ogawa T, Watanabe M, Eguchi M
289 - 296	Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates Kopecek R, Peter K, Hotzel J, Bucher E
297 - 302	Phase modifications in polysilicon films with fibrous and dendritic structure Nakhodkin NG, Kulish NP, Rodionova TV, Strutinsky AM
303 - 312	Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon Wang YR, Kakimoto K
313 - 321	Thermophysical properties measurement of molten silicon by high-temperature electrostatic levitator: density, volume expansion, specific heat capacity, emissivity, surface tension and viscosity Rhim WK, Ohsaka K
322 - 326	Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy Liu JP, Huang DD, Li JP, Lin YX, Sun DZ, Kong MY
327 - 340	Three-dimensional simulation of vertical zone-melting crystal growth: symmetry breaking to multiple states Lan CW, Liang MC
341 - 349	Control of thermal conditions during crystal growth by inverse modeling Kurz M, Muller G
350 - 356	Growth of Y1-zNdzBa2Cu3Ox single crystals Aswal DK, Mori T, Hayakawa Y, Kumagawa M
357 - 364	High quality YBa2Cu3O7-delta/PrBa2Cu3O7-delta multilayers grown by pulsed injection MOCVD Galindo V, Senateur JP, Abrutis A, Teiserskis A, Weiss F
365 - 369	Growing high-quality C-60 films by using Sb buffer layer Xu WT, Hou JG
370 - 378	Float-zone crystal growth of CdGeAs2 in microgravity: numerical simulation and experiment Saghir MZ, Labrie D, Ginovker A, Paton BE, George AE, Olson K, Simpson AM
379 - 388	Characterization of CdGeAs2 grown by the float zone technique under microgravity Labrie D, George AE, Simpson AM, Paton BE, Ginovker A, Saghir MZ
389 - 394	Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBE Ko HJ, Chen YF, Zhu Z, Hanada T, Yao T
395 - 400	Epitaxial growth of MnAs on single-crystalline Mn-Zn ferrite substrates Ikeda T, Fujioka H, Hayakawa S, Ono K, Oshima M, Yoshimoto M, Maruta H, Koinuma H, Inaba K, Matsuo R
401 - 408	Growth of fcc Co in sputter-deposited Co/Au multilayers with (111) texture Kehagias T, Komninou P, Christides C, Nouet G, Stavroyiannis S, Karakostas T
409 - 415	Cross-sectional cleavages of SiC for evaluation of epitaxial layers Syvajarvi M, Yakimova R, Janzen E
416 - 422	Thermal analysis and synthesis from the melts of Cu-based quaternary compounds Cu-III-IV-VI, and Cu-2-II-IV-VI4 (II = Zn, Cd; III=Ga, In; IV=Ge, Sn ; VI=Se) Matsushita H, Maeda T, Katsui A, Takizawa T
423 - 430	Strain relaxation in PbSnSe and PbSe/PbSnSe layers grown by liquid-phase epitaxy on (100)-oriented silicon Li CP, McCann PJ, Fang XM
431 - 441	Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas Segal AS, Vorob'ev AN, Karpov SY, Mokhov EN, Ramm MG, Ramm MS, Roenkov AD, Vodakov YA, Makarov YN
442 - 448	Growth temperatures and microstructure selection during Bridgman solidification of hypereutectic Al-La and Al-Ce alloys Juarez-Hernandez A, Jones H
449 - 458	Initial growth of 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) on Au(111): a scanning tunneling microscopy study Chizhov I, Kahn A, Scoles G
459 - 465	Effect of internal radiative heat transfer on transition of flow modes in CZ oxide melt Kobayashi M, Tsukada T, Hozawa M
466 - 470	Solid solution single crystal growth of the aluminum tungstate-scandium tungstate system by a modified CZ method Imanaka N, Hiraiwa M, Tamura S, Adachi G, Dabkowski A
471 - 481	Vanadium transition metal oxide films obtained by annealing under room atmosphere of metal layers sequentially deposited Ali EB, Bernede JC, Le Ray P
482 - 486	Crystal growth, thermal and optical properties of SmCa4O(BO3)(3) crystal Zhang SJ, Yang H, Cheng ZX, Liu XS, Chen HC
487 - 492	The study of a self-frequency-doubling laser crystal Nd3+ : GdAl3(BO3)(4) Tu CY, Qiu MW, Huang YC, Chen XY, Jiang AD, Luo ZD
493 - 500	Growth and characterization of MgO doped near stoichiometric LiNbO3 crystals as a new nonlinear optical material Niwa K, Furukawa Y, Takekawa S, Kitamura K
501 - 507	Floating-zone growth of rutile single crystals inclined at 48 degrees to the c-axis Higuchi M, Hatta K, Takahashi J, Kodaira K, Kaneda H, Saito J
508 - 512	The influence of temperature distribution upon the structure of LiNbO3 crystal rods grown using the LHPG method Chen JC, Lee YC
513 - 519	Alignment mechanisms between particles in crystalline aggregates Collier AP, Hetherington CJD, Hounslow MJ
520 - 524	The role of dislocations, integral strain, and supersaturation on the growth rates of sodium nitrate Jones CM, Larson MA, Ristic RI, Sherwood JN
525 - 532	Monitoring crystal dissolution at nanometer resolution using laser reflectometry Eggington PJ, Taylor AG
533 - 540	Crystallization kinetics of ammonium perchlorate in MSMPR crystallizer Tanrikulu SU, Eroglu I, Bulutcu AN, Ozkar S
541 - 545	Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique Meng XJ, Cheng JG, Li B, Guo SL, Ye HJ, Chu JH
546 - 554	Growth habit of rutile and alpha-Al2O3 crystals Li WJ, Shi EW, Yin ZW
555 - 568	Study of ammonium chloride crystallization in a mixed vessel Sessiecq P, Gruy F, Cournil M
569 - 578	Spherulitic crystallization of 3-nitro-1,2,4-triazol-5-one in water plus N-methyl-2-pyrrolidone Kim KJ
579 - 591	Crystallization of some heavy-metal phosphates alone and in the presence of calcium ion Ayati M, Madsen HEL
592 - 598	New method for the production of silver halide tabular crystals Millan A
599 - 614	Growth of potassium sulfate crystals in the presence of organic dyes: in situ characterization by atomic force microscopy Mauri A, Moret M
615 - 622	Theoretical morphology of adipic acid crystals Pfefer G, Boistelle R
623 - 637	The evolution of growth modes and activity of growth sources on canavalin investigated by in situ atomic force microscopy Land TA, De Yoreo JJ
638 - 644	Effects of pressure on growth kinetics of tetragonal lysozyme crystals Suzuki Y, Miyashita S, Sazaki G, Nakada T, Sawada T, Komatsu H
645 - 650	Effects of a magnetic field on the growth rate of tetragonal lysozyme crystals Yanagiya S, Sazaki G, Durbin SD, Miyashita S, Nakajima K, Komatsu H, Watanabe K, Motokawa M
651 - 656	Cessation of growth in crystals Rodriguez CF, Morales SA, Rodriguez FF
657 - 664	Crystallization of proteinase K complexed with substrate analogue peptides on US space missions STS-91 and STS-95 Eschenburg S, Degenhardt M, Moore K, DeLucas LJ, Peters K, Fittkau S, Weber W, Betzel C
665 - 677	Growth kinetics and motion of thaumatin crystals during USML-2 and LMS microgravity missions and comparison with earth controls Lorber B, Ng JD, Lautenschlager P, Giege R
678 - 686	Pressure dependence of subtilisin crystallization kinetics Waghmare RY, Webb JN, Randolph TW, Larson MA, Glatz CE
687 - 695	Nucleation-limited aggregation of crystallites in fractal growth Liu XY, Wang M, Li DW, Strom CS, Bennema P, Ming NB
696 - 708	Growth characteristics of boehmite-derived ultrafine theta and alpha-alumina particles during phase transformation Wen HL, Yen FS
709 - 716	Morphological instability of the austenite growth front in a laser remelted iron-carbon-silicon alloy Lima MSF, Goldenstein H
717 - 725	A visualization and computational study of horizontal Bridgman crystal growth Lan CW, Su MC, Liang MC
726 - 745	Analytic solution for a non-axisymmetric isothermal dendrite McFadden GB, Coriell SR, Sekerka RF
746 - 756	Similarity solutions describing the melting of a mushy layer Feltham DL, Worster MG
757 - 771	A parametric study of segregation effects during vertical Bridgman crystal growth with an axial magnetic field Ma N, Walker JS
772 - 778	Spacing in solidification of dendritic arrays Makkonen L
779 - 785	Limits of constitutional undercooling and interfacial liquid compositions during steady-state directional solidification of binary alloys at various interface velocities Srikanth S, Ramachandrarao P, Chvoj Z
786 - 790	MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001) Li ZQ, Chen H, Liu HF, Li JH, Wan L, Liu S, Huang Q, Zhou JM
791 - 794	Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice Zhuang QD, Li JM, Wang XX, Zeng YP, Wang YT, Wang BQ, Pan L, Wu J, Kong MY, Lin LY
795 - 798	Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer Chen H, Cai LC, Bao CL, Li JH, Huang Q, Zhou JM
799 - 803	Surfactant effect of Mn on the formation of self-organized InAs nanostructures Guo SP, Shen A, Yasuda H, Ohno Y, Matsukura F, Ohno H
804 - 808	Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy Kim C, Yi J, Kim S, Kim MH, Yang M, Choi Y, Yoo TK, Kim ST
809 - 812	Discontinuous growth of primary naphthalene plate in camphor-naphthalene eutectic system Suk MJ, Leonartz K