Journal of Crystal Growth

Journal of Crystal Growth, Vol.216, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (72 articles)

1 - 5	2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication Kishimoto D, Ogura T, Yamashiki A, Nishinaga T, Naritsuka S, Sakaki H
6 - 14	Development of dislocation density analysis code for annealing process of single-crystal ingot Miyazaki N, Yamamoto S, Kutsukake H
15 - 20	High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Stemmer J, Fedler F, Klausing H, Mistele D, Rotter T, Semchinova O, Aderhold J, Sanchez AM, Pacheco FJ, Molina SI, Fehrer M, Hommel D, Graul J
21 - 25	LEC growth of In-doped GaAs with bottom solid feeding He J, Kou S
26 - 32	Planar ordering of InP quantum dots on (100)In0.48Ga0.52P Hatami F, Muller U, Kissel H, Braune K, Blum RP, Rogaschewski S, Niehus H, Kirmse H, Neumann W, Schmidbauer M, Kohler R, Masselink WT
33 - 36	Gas chromatography-mass spectroscopy study of tert-butylarsine stability and purification Bartram ME, Breiland WG, Bruskas LA, Killeen KP
37 - 43	Growth of homogeneous In1-xGaxSb crystals by the graded solute concentration method Kinoshita K, Kato H, Matsumoto S, Yoda S
44 - 50	Growth of high-quality cubic GaN on Si(001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy Wang D, Hiroyama Y, Tamura M, Ichikawa M, Yoshida S
51 - 56	Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures Zheng HQ, Yoon SF, Gay BP, Mah KW, Radhakrishnan K, Ng GI
57 - 61	Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy Zhuang QD, Yoon SF, Zheng HQ, Yuan KH
62 - 68	The annealing effects of Mg-doped GaN epilayers capped with SiO2 layers Lee CR, Leem JY, Ahn BG
69 - 79	Preparation and characterization of AlN powders in the AlCl3-NH3-N-2 system Wang MC, Wu NC, Tasi MS, Liu HS
80 - 86	Chemical beam epitaxy of AlAs using novel group-V precursors Shi BQ, Kondow M, Tu CW
87 - 96	A reaction model for chemical beam epitaxy with triethylgallium and tris(dimethylamino)arsenic Shi BQ, Tu CW
97 - 103	Novel approach to the calculation of instability regions in GaInAsSb alloys Sorokin VS, Sorokin SV, Semenov AN, Meltser BY, Ivanov SV
104 - 104	Vapor growth and characterization of ZnSeTe solid solutions Su CH, Sha YG, Volz MP, Carpenter P, Lehoczky SL
113 - 118	ZnSe horizontal traveling solvent growth using selenium solution Maruyama K, Suto K, Nishizawa J
119 - 126	A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies Wolfframm D, Evans DA, Westwood DI, Riley J
127 - 133	Study of the effect of polarity and of dislocations on the electrical and optoelectronic properties of p-type Cd0.96Zn0.04Te Guergouri K, Teyar E, Triboulet R
134 - 140	Stoichiometry control of ZnTe single crystals by the vapor pressure-controlled wafer-annealing method Uchida M, Matsuda Y, Asahi T, Sato K, Oda O
141 - 146	DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy Lu LW, Mak KK, Ma ZH, Wang J, Sou IK, Ge WK
147 - 151	Study of crystallization and spectral properties of PbS nanocrystals doped in SiO2 aerogel matrix Yao LZ, Ye CH, Mo CM, Cai WL, Zhang LD
152 - 158	Atomic layer epitaxy growth of ZnSxSe1-x epitaxial layers lattice-matched to Si substrates Chen NT, Yokoyama M, Ueng HY
159 - 170	Observation of monolayer and bilayer period RHEED oscillations during epitaxial growth of Ge on Ge(100) Berrie CL, Leone SR
171 - 184	Chemical vapor deposition of silicon-germanium heterostructures Bozzo S, Lazzari JL, Coudreau C, Ronda A, d'Avitaya FA, Derrien J, Mesters S, Hollaender B, Gergaud P, Thomas O
185 - 191	Periodic instability in growth of chains of crystalline-silicon nanospheres Kohno H, Takeda S
192 - 203	Hybrid finite-volume/finite-element simulation of heat transfer and melt turbulence in Czochralski crystal growth of silicon Lipchin A, Brown RA
204 - 219	Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth Ratnieks G, Muiznieks A, Buligins L, Raming G, Muhlbauer A, Ludge A, Riemann H
220 - 224	Growth of large Bi2Sr2CaCu2Oy single crystals by a vertical Bridgman method Kishida S, Nakamura M, Liang WY
225 - 234	Diamond growth on polycrystalline nickel silicides Rey S, Hommet J, Schmerber G, Le Normand F
235 - 244	Crack formation in Zn3As2 epilayers grown by MOVPE Engelbrecht JAA, Scriven GJ, Neethling JH, Wagener MC
245 - 248	Temperature dependence of characteristics of SrS : Cu(Ag) thin-film electroluminescent devices beyond room temperature Vlasenko NA, Kononets YF, Kopytko YV, Soininen E, Sun SS
249 - 255	On nature of centers responsible for inherent memory in ZnS : Mn thin-film electroluminescent devices Vlasenko NA, Chumachkova MM, Denisova ZL, Veligura LI
256 - 262	Structural properties of subgrain boundaries in bulk SiC crystals Katsuno M, Ohtani N, Aigo T, Fujimoto T, Tsuge H, Yashiro H, Kanaya M
263 - 272	In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging Wellmann PJ, Bickermann M, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A
273 - 282	Physical vapor transport of lead telluride Palosz W
283 - 292	Thermochemical model and experimental studies on physical vapor transport of lead telluride-selenide Palosz W, Alexander HA, Grasza K
293 - 298	Czochralski growth and characterization of piezoelectric single crystals with langasite structure: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LCN) and La3Ga5.5Ta0.5O14 (LGT) II. Piezoelectric and elastic properties Bohm J, Chilla E, Flannery C, Frohlich HJ, Hauke T, Heimann RB, Hengst M, Straube U
299 - 303	Flux synthesis of alkaline earth palladates Smallwood PL, Smith MD, zur Loye HC
304 - 310	Galvanostatic deposition and characterization of cuprous oxide thin films Mahalingam T, Chitra JSP, Rajendran S, Jayachandran M, Chockalingam MJ
311 - 316	Morphological aspects of flux grown 0.91PZN-0.09PT crystals Kumar FJ, Lim LC, Chilong E, Tan MJ
317 - 321	Nonstoichiometry in apatite-type neodymium silicate single crystals Higuchi M, Kodaira K, Nakayama S
322 - 325	Growth of beta(II)-Li3VO4 single crystals by the heater-in-zone zone-melting method using a traveling solvent of LiVO3 Higuchi M, Chuman Y, Kitagawa T, Kodaira K
326 - 329	Comparative study of textured and epitaxial ZnO films Ryu YR, Zhu S, Wrobel JM, Jeong HM, Miceli PF, White HW
330 - 334	Synthesis of p-type ZnO films Ryu YR, Zhu S, Look DC, Wrobel JM, Jeong HM, White HW
335 - 342	X-ray characterization of LiNbO3 films grown by pulsed laser deposition on SrTiO3(100), NdGaO3(110) and MgO(111) substrates Tagliente MA, De Caro L, Sacchetti A, Tapfer L, Balestrino G, Medaglia PG, Tebano A, Tucciarone A
343 - 347	Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy Xu K, Deng PZ, Xu J, Zhou GQ, Liu WJ, Tian YL
348 - 351	Growth of high-quality single crystal of 30 at% Yb : YAG and its laser performance Yang PZ, Deng PZ, Xu J, Yin ZW
352 - 358	Defects in flux and Czochralski grown beta-BaB2O4 crystals observed by light scattering tomography Tsuru T, Ogawa T
359 - 362	An azimuthal pattern of heat field in beta-BaB2O4 crystal growth Kokh AE, Kononova NG, Mokruchnikov PW
363 - 366	Crystal growth of La-2(WO4)(3) Qi XD, Luo ZD, Liang JK
367 - 371	Growth of lowly Nd doped GdVO4 single crystal and its laser properties Zhang HJ, Meng XL, Liu JH, Zhu L, Wang CQ, Shao ZS, Wang JY, Liu YG
372 - 388	Three-dimensional numerical simulation of oxide melt flow in Czochralski configuration Jing CJ, Imaishi N, Sato T, Miyazawa Y
389 - 398	Influence of Marangoni convection on the flow pattern in the melt during growth of Y3Al5O12 single crystals by the Czochralski method Galazka Z, Wilke H
399 - 406	The influence of magnetism on precipitation of calcium phosphate Sorensen JS, Madsen HEL
407 - 412	Influence of magnetic field on sodium hexafluorosilicate synthesis Chandrasekhar R
413 - 427	Etching and surface termination of K2Cr2O7 {001} faces observed using in situ atomic force microscopy Plomp M, van Enckevort WJP, Vlieg E
428 - 436	Determination of supercooling in the presence of macrosteps on the growing facet of BGO Golyshev VD, Gonik MA, Tsvetovsky VB, Vasilev YV, Shlegel VN
437 - 442	Correlation between the crystal size and crystal growth rate of KDP and Rochelle salt crystals Mitrovic MM, Zekic AA, Napijalo MM
443 - 449	Hydroxyapatite crystallization in the presence of serine, tyrosine and hydroxyproline amino acids with polar side groups Koutsopoulos S, Dalas E
450 - 458	The calcification of fibrin in vitro Koutsopoulos S, Dalas E
459 - 465	Polymorph and morphology of calcium carbonate crystals induced by proteins extracted from mollusk shell Feng QL, Pu G, Pei Y, Cui FZ, Li HD, Kim TN
466 - 474	A cell to study in situ electrocrystallization of calcium carbonate Euvrard M, Filiatre C, Crausaz E
475 - 482	Application of genetic algorithm for determination of mass transfer coefficients Sahin O, Sayan P, Bulutcu AN
483 - 494	Microsegregation in Peltier interface demarcation Dabo Y, Thi HN, Coriell SR, McFadden GB, Li Q, Billia B
495 - 500	Electrical pulsing during directional solidification: analysis of transients by Laplace transform Coriell SR, McFadden GB, Billia B, Thi HN, Dabo Y
501 - 511	Effects of a vertical magnetic field on chimney convection in a mushy layer Riahi DN
512 - 526	Selection of the dynamically stable regime of rapid solidification front motion in an isothermal binary alloy Galenko PK, Danilov DA
527 - 531	Photoluminescence properties of dense InAs/AlInAs quantum wire arrays Li HX, Daniels-Race T, Hasan MA
532 - 534	Sphalerite-type (Cd, Zn)S films by atomic layer epitaxy in the gas flow Szczerbakow A, Bak-Misiuk J, Dynowska E, Ghali M, Godlewski M, Ivanov VY, Swiatek K
535 - 537	Investigations on cracking in CdWO4 crystals Sabharwal SC, Sangeeta
538 - 541	Stereo-open spherulites in high-pressure crystallized poly (ethylene terephthalate) Li LB, Rui H, Lu A, Fan WY, Hong SM, Fu Q