Journal of Crystal Growth

Journal of Crystal Growth, Vol.297, No.2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

265 - 271	Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Chen WZ, Lee KY, Capano MA
272 - 278	On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction Renard C, Marcadet X, Massies J
279 - 282	Growth of blue GaN LED structures on 150-mm Si(111) Dadgar A, Hums C, Diez A, Blasing J, Krost A
283 - 288	Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers Park JH, Khandekar AA, Park SM, Mawst LJ, Kuech TF, Nealey PF
289 - 293	Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn Shon Y, Jeon HC, Lee S, Lee SW, Kim DY, Kang TW, Kim EK, Yoon CS, Kim CK, Park YJ, Kim Y, Baik JM, Lee JL
294 - 299	Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films Liu WR, Hsieh WF, Hsu CH, Liang KS, Chien FSS
300 - 305	Spontaneous growth of indium nanostructures Wei HL, Zhang L, Liu Z, Huang HC, Zhang XX
306 - 310	MOVPE growth of high-quality AlN Dadgar A, Krost A, Christen J, Bastek B, Bertram F, Krtschil A, Hempel T, Blasing J, Haboeck U, Hoffmann A
311 - 316	Effect of substrate dislocations on the Hg in-diffusion in CdZnTe substrates used for HgCdTe epilayer growth Kumar S, Kapoor AK, Nagpal A, Sharma S, Verma D, Kumar A, Raman R, Basu PK
317 - 320	Characteristics of single crystalline AlN films grown on Ru(0001) substrates Inoue S, Okamoto K, Nakano T, Fujioka H
321 - 325	Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy Kamber DS, Wu Y, Haskell BA, Newman S, DenBaars SP, Speck JS, Nakamura S
326 - 333	Optimization of Au-assisted InAs nanowires grown by MOVPE Dick KA, Deppert K, Samuelson L, Seifert W
334 - 338	Tetragonal red and yellow HgI2-CdI2 crystals for X- and gamma-ray solid-state detectors directionally solidified under argon pressure of 20 atm Cummings T, Marin C, Ostrogorsky AG, Burger A, Bliss M
339 - 344	Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films Wang CL, Wang WL, Liao WT, Gong JR, Lin CK, Lin TY
345 - 351	Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy Guo Y, Pitts OJ, Jiang WY, Watkins SP
352 - 355	The effects of Sn4+ ion on the growth habit and optical properties of KDP crystal Wang B, Fang CS, Wang SL, Sun X, Gu QT, Li YP, Xu XG, Zhang JQ, Liu B, Mou XM
356 - 360	Growth of L-lysine monohydrochloride dihydrate bulk single crystal by Sankaranarayanan-Ramasamy (SR) method Babu RR, Sethuraman K, Gopalakrishnan R, Ramasamy P
361 - 365	Synthesis, crystal growth and characterization of organic NLO material: N-(4-nitrophenyl)-N-methyl-2-aminoacetonitrile (NPAN) Gao SK, Chen WJ, Wang GM, Chen JZ
366 - 371	The two-type forms of pressure-induced grown chloroform Takahashi Y, Shigematsu K, Nishizaki T
372 - 381	Structural, dielectric and optical properties of N-(2 chlorophenyl)-(1-propanamide) (NCP) single crystals Srinivasan P, Kanagasekaran T, Vijayan N, Balamurugan R, Prakash ARCS, Kannan P, Gopalakrishnan R, Ramasamy P
382 - 386	Control of grain position in Ni-mediated crystallization of amorphous silicon Park SJ, Kim KH, Jang J
387 - 389	Hydrothermal synthesis and characterization of orchid-like MnO2 nanostructures Li XL, Li WJ, Chen XY, Shi CW
390 - 395	Effect of carbon and post-annealing treatment on magnetic properties of high-quality iron thin films Liu KW, Shen DZ, Zhang JY, Wu XJ, Li BH, Li BS, Lu YM, Fan XW
396 - 402	Calcium phosphate crystal growth under controlled environment through urea hydrolysis Lu X, Wang YB, Wang JX, Qu SX, Weng J, Xin RL, Leng Y
403 - 410	The effect of SiO2 addition on structural, magnetic and electrical properties of strontium hexa-ferrites Hussain S, Anis-ur-Rehman M, Maqsood A, Awan MS
411 - 418	Optical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering Yang FF, Fang L, Zhang SF, Liao KJ, Liu GB, Dong JX, Li L, Fu GZ
419 - 425	Structural and magnetic properties of CdxInyCrzSe4 Skrzypek D, Malicka E, Waskowska A, Widuch S, Cichon A, Mydlarz T
426 - 431	Growth and characterization of CuFeS2 thin films Barkat L, Hamdadou N, Morsli M, Khelil A, Bernede JC