Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.21 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (37 articles)

3057 - 3062	AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment Dimastrodonato V, Mereni LO, Young RJ, Pelucchi E
3063 - 3068	SIMS and Raman characterizations of ZnO:N thin films grown by MOCVD Marzouki A, Lusson A, Jomard F, Sayari A, Galtier P, Oueslati M, Sallet V
3069 - 3074	Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal process Li XQ, Yang DR, Yu XG, Que DL
3075 - 3079	Synthesis and optical properties of Ce-doped ZnO hexagonal nanoplatelets Mahmoud WE
3080 - 3084	Specific features of formation and propagation of 60 degrees and 90 degrees misfit dislocations in GexS1-x/Si films with x > 0.4 Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
3085 - 3090	Modulation of dendrite growth of cuprous oxide by electrodeposition Wan LJ, Wang ZQ, Yang ZS, Luo WJ, Li ZS, Zou ZG
3091 - 3095	Impurity segregation in directional solidified multi-crystalline silicon Bellmann MP, Meese EA, Arnberg L
3096 - 3100	Differences in nucleation and properties of InN islands formed using two different deposition procedures Laboutin O, Johnson W, Welser R
3101 - 3104	GaP:Mg layers grown on GaN by MOCVD Li ST, Su J, Fan GH, Liu C, Cao JX, Yin YA
3105 - 3110	Metamorphic growth of tensile strained GaInP on GaAs substrate Toikkanen L, Hakkarainen T, Schramm A, Tukiainen A, Laukkanen P, Guina M
3111 - 3116	Thermal-induced phase transition and assembly of hexagonal metastable In2O3 nanocrystals: A new approach to In2O3 functional materials Shu SW, Yu DB, Wang Y, Wang F, Wang ZR, Zhong W
3117 - 3121	Dense vertical nanoplates arrays and nanobelts of indium doped ZnO grown by thermal treatment of ZnS-In2O3 powders Aleman B, Fernandez P, Piqueras J
3122 - 3126	Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer Song H, Suh J, Kim EK, Baik KH, Hwang SM
3127 - 3130	Growth of polar axis oriented tetragonal Pb(Zr,Ti)O-3 films on CaF2 substrates with transparent (La0.07Sr0.93)SnO3 Utsugi S, Ehara Y, Tanaka H, Yamada T, Funakubo H, Uchida H
3131 - 3135	Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Iida D, Tamura K, Iwaya M, Kamiyama S, Amano H, Akasaki I
3136 - 3142	Bridgman growth and site occupation in LuAG:Ce scintillator crystals Petrosyan AG, Ovanesyan KL, Sargsyan RV, Shirinyan GO, Abler D, Auffray E, Lecoq P, Dujardin C, Pedrini C
3143 - 3146	Approach for dislocation free GaN epitaxy Hite JK, Mastro MA, Eddy CR
3147 - 3150	Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition Wu W, Yu QK, Lian J, Bao JM, Liu ZH, Pei SS
3151 - 3155	Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD Suresh S, Lourdudoss S, Landgren G, Baskar K
3156 - 3160	Growth and characterization of organic material 4-nitrobenzaldehyde single crystal using modified vertical Bridgman technique Suthan T, Rajesh NP
3161 - 3164	Solubility of GaN in supercritical ammonia with ammonium chloride as a mineralizer Tomida D, Kuroda K, Hoshino N, Suzuki K, Kagamitani Y, Ishiguro T, Fukuda T, Yokoyama C
3165 - 3170	Effects of pH and temperature on CaCO3 crystallization in aqueous solution with water soluble matrix of pearls Ma YF, Gao YH, Feng QL
3171 - 3177	Unidirectional growth of L-asparagine monohydrate single crystal: First time observation of NLO nature and other studies of crystalline perfection, optical, mechanical and dielectric properties Shakir M, Riscob B, Maurya KK, Ganesh V, Wahab MA, Bhagavannarayana G
3178 - 3182	Nucleation kinetics of selenium (+4) precipitation from an acidic copper sulphate solution Mangere M, Nathoo J, Lewis AE
3183 - 3190	Study of batch maltitol (4-O-alpha-D-glucopyranosyl-D-glucitol) crystallization by cooling and water evaporation Gharsallaoui A, Roge B, Mathlouthi M
3191 - 3197	Microwave-assisted synthesis of spheroidal vaterite CaCO3 in ethylene glycol-water mixed solvents without surfactants Chen YX, Ji XB, Wang XB
3198 - 3203	Numerical study of induction heating in melt growth systems-Frequency selection Tavakoli MH, Karbaschi H, Samavat F, Mohammadi-Manesh E
3204 - 3208	Lu5Ir4Si10 whiskers: Morphology, crystal structure, superconducting and charge density wave transition studies Opagiste C, Leroux M, Rodiere P, Garbarino G, Pairis S, Bordet P, Lejay P
3209 - 3213	Growth and optical properties of high-density InN nanodots Ke WC, Lee SJ, Kao CY, Chen WK, Chou WC, Lee MC, Chang WH, Lin WJ, Cheng YC, Lee TC, Lin JC
3214 - 3218	Half opened microtubes of NaYE4:Yb,Er synthesized in reverse microemulsion under solvothermal condition Huang YJ, You HP, Song YH, Jia GA, Yang M, Zheng YH, Zhang LH, Liu K
3219 - 3224	Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD) Hwang JH, Shields VB, Thomas CI, Shivaraman S, Hao D, Kim MY, Woll AR, Tompa GS, Spencer MG
3225 - 3234	Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field Krauze A, Jekabsons N, Muiznieks A, Sabanskis A, Lacis U
3235 - 3237	Droplet epitaxy of zinc-blende GaN quantum dots Schupp T, Meisch T, Neuschl B, Feneberg M, Thonke K, Lischka K, As DJ
3238 - 3242	Molecular dynamics simulations of the crystal-melt interface mobility in HCP Mg and BCC Fe Gao YF, Yang Y, Sun DY, Asta M, Hoyt JJ
3243 - 3246	Growth of (CH3)(2)NH2CuCl3 single crystals using evaporation method with different temperatures and solvents Chen LM, Tao W, Zhao ZY, Li QJ, Ke WP, Wang XM, Liu XG, Fan C, Sun XF
3247 - 3250	Optimizing dopant activation in Si:P double delta-layers McKibbin SR, Clarke WR, Fuhrer A, Simmons MY
3251 - 3256	Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires Klamchuen A, Yanagida T, Kanai M, Nagashima K, Oka K, Kawai T, Suzuki M, Hidaka Y, Kai S