화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.222, No.3 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (36 articles)

427 - 430 Effect of atmosphere on the crystallization temperature of BaB2O4 melt
Sangeeta, Sabharwal SC
431 - 434 Crystal growth of gallium nitride in supercritical ammonia
Ketchum DR, Kolis JW
435 - 451 CdTe crystal growth process by the Bridgman method: numerical simulation
Martinez-Tomas C, Munoz V
452 - 458 In situ cleaning of GaN/6H-SiC substrates in NH3
McGinnis AJ, Thomson D, Davis RF, Chen E, Michel A, Lamb HH
459 - 464 The effect of p-GaN : Mg layers on the turn-on voltage of p-n junction LED
Lee CR, Seol KW, Yeon JM, Choi DK, Ahn HK
465 - 470 (AlGa)As composition profile analysis of trenches overgrown with MOVPE
Hofmann L, Rudloff D, Rechenberg I, Knauer A, Christen J, Weyers M
471 - 476 In situ etching at InGaAs/GaAs quantum well interfaces
Chirlias E, Massies J, Marcadet X, Guyaux JL, Grattepain C
477 - 481 Growth and characterization of cubic-CdS layers on (100) GaAs in metalorganic vapor-phase epitaxy
Yasuda K, Samion HB, Miyata M, Araki N, Masuda Y, Tomita Y
482 - 496 Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies
Gil-Lafon E, Napierala J, Castelluci D, Pimpinelli A, Cadoret R, Gerard B
497 - 502 Defect luminescence of GaN grown by pulsed laser deposition
Mah KW, McGlynn E, Castro J, Lunney JG, Mosnier JP, O'Mahony D, Henry MO
503 - 506 Effect of rapid thermal annealing an the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy
Liu HF, Chen H, Xu M, Wan L, Mai ZH, Huang Q, Zhou JM
507 - 510 Nucleation of hexagonal AlN in nitridized AlAs buffer on (001) GaAs substrate
Wan L, Duan XF, Chen H, Liu HF, Li ZQ, Huang Q, Zhou JM
511 - 517 Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals
Naoi H, Shaw DM, Naoi Y, Collins GJ, Sakai S
518 - 523 A study on the growth and the microstructure of double doping Bi2-xPbxSr2-yLayCuOz single crystals
Zhang JW, Zhang CJ, Xie HF, Zhang YH
524 - 527 Large crystal growth and measurement of electro-optical coefficients of ADP
Li ZD, Huang XJ, Wu DX, Xiong KM
528 - 533 Hydrothermal synthesis and characterization of La1-xCexOHSO4 phosphors
Han ZH, Zhong C, Cao J, Yu SH, Tang KB, Zhao HQ, Qian YT
534 - 537 Facet formation and overgrowth of sub-mu m W-patterns on GaAs(001) surfaces
Jarlskog L, Wernersson LE, Borgstrom M, Seifert W, Samuelson L
538 - 548 Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen
Aujol E, Napierala J, Trassoudaine A, Gil-Lafon E, Cadoret R
549 - 557 Spontaneous nucleation of cubic boron nitride single crystal by temperature gradient method under high pressure
Taniguchi T, Yamaoka S
558 - 564 Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation
Lei CH, Van Tendeloo G, Siegert M, Schubert J, Buchal C
565 - 573 Preparation and some physical properties of tetradymite-type Sb2Te3 single crystals doped with CdS
Lost'ak P, Drasar C, Krejcova A, Benes L, Dyck JS, Chen W, Uher C
574 - 578 Phase diagram of the CaS-Ga2S3 system and melt growth of CaGa2S4 single crystals
Komatsu-Hidaka C, Takizawa T
579 - 585 In-situ observation of silicon carbide sublimation growth by X-ray topography
Kato T, Oyanagi N, Yamaguchi H, Nishizawa S, Khan MN, Kitou Y, Arai K
586 - 590 Radial growth dynamics of nanowires
Chen XL, Lan YC, Li JY, Cao YG, He M
591 - 594 Reducing the grain size for fabrication of nanocrystalline diamond films
Jiang N, Sugimoto K, Eguchi K, Inaoka T, Shintani Y, Makita H, Hatta A, Hiraki A
595 - 606 The study of behaviour of surface supersaturation caused by variations in bulk supersaturation
Rak M
607 - 614 The influence of accelerated crucible rotation mode on the melt temperature field in the Stockbarger technique
Distanov VE, Kirdyashkin AG
615 - 626 Effects of bovine amelogenins on the crystal morphology of octacalcium phosphate in a model system of tooth enamel formation
Iijima M, Moriwaki Y, Takagi T, Moradian-Oldak J
627 - 629 Hydrothermal crystal growth of stishovite (SiO2)
Lityagina LM, Dyuzheva TI, Nikolaev NA, Bendeliani NA
630 - 636 Growth of platelets under diffusion conditions - Morphological stability investigation of platelets obtained on the zinc single crystals (I)
Iwanov D
637 - 644 Increase in dissolution rate of sodium chlorate induced by elastic strain
Morel J, den Brok SWJ
645 - 654 Coupled growth behavior in the rapidly solidified Ti-Al peritectic alloys
Liu YC, Yang GC, Guo XF, Huang J, Zhou YH
655 - 666 On the boundary conditions at a mush-melt interface
Loper DE
667 - 676 Effective distribution coefficients of a binary ideal solid solution controlled by kink kinetics
Matsumoto N, Kitamura M
677 - 684 Numerical simulation of magnetic field design for damping thermocapillary convection in a floating half-zone
Li K, Hu WR
685 - 691 On the stability of (001) Au/Ni artificially modulated structures grown by MBE
Abadias G, Schuster I, Marty A, Gilles B, Deutsch T