427 - 430 |
Effect of atmosphere on the crystallization temperature of BaB2O4 melt Sangeeta, Sabharwal SC |
431 - 434 |
Crystal growth of gallium nitride in supercritical ammonia Ketchum DR, Kolis JW |
435 - 451 |
CdTe crystal growth process by the Bridgman method: numerical simulation Martinez-Tomas C, Munoz V |
452 - 458 |
In situ cleaning of GaN/6H-SiC substrates in NH3 McGinnis AJ, Thomson D, Davis RF, Chen E, Michel A, Lamb HH |
459 - 464 |
The effect of p-GaN : Mg layers on the turn-on voltage of p-n junction LED Lee CR, Seol KW, Yeon JM, Choi DK, Ahn HK |
465 - 470 |
(AlGa)As composition profile analysis of trenches overgrown with MOVPE Hofmann L, Rudloff D, Rechenberg I, Knauer A, Christen J, Weyers M |
471 - 476 |
In situ etching at InGaAs/GaAs quantum well interfaces Chirlias E, Massies J, Marcadet X, Guyaux JL, Grattepain C |
477 - 481 |
Growth and characterization of cubic-CdS layers on (100) GaAs in metalorganic vapor-phase epitaxy Yasuda K, Samion HB, Miyata M, Araki N, Masuda Y, Tomita Y |
482 - 496 |
Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies Gil-Lafon E, Napierala J, Castelluci D, Pimpinelli A, Cadoret R, Gerard B |
497 - 502 |
Defect luminescence of GaN grown by pulsed laser deposition Mah KW, McGlynn E, Castro J, Lunney JG, Mosnier JP, O'Mahony D, Henry MO |
503 - 506 |
Effect of rapid thermal annealing an the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy Liu HF, Chen H, Xu M, Wan L, Mai ZH, Huang Q, Zhou JM |
507 - 510 |
Nucleation of hexagonal AlN in nitridized AlAs buffer on (001) GaAs substrate Wan L, Duan XF, Chen H, Liu HF, Li ZQ, Huang Q, Zhou JM |
511 - 517 |
Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals Naoi H, Shaw DM, Naoi Y, Collins GJ, Sakai S |
518 - 523 |
A study on the growth and the microstructure of double doping Bi2-xPbxSr2-yLayCuOz single crystals Zhang JW, Zhang CJ, Xie HF, Zhang YH |
524 - 527 |
Large crystal growth and measurement of electro-optical coefficients of ADP Li ZD, Huang XJ, Wu DX, Xiong KM |
528 - 533 |
Hydrothermal synthesis and characterization of La1-xCexOHSO4 phosphors Han ZH, Zhong C, Cao J, Yu SH, Tang KB, Zhao HQ, Qian YT |
534 - 537 |
Facet formation and overgrowth of sub-mu m W-patterns on GaAs(001) surfaces Jarlskog L, Wernersson LE, Borgstrom M, Seifert W, Samuelson L |
538 - 548 |
Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen Aujol E, Napierala J, Trassoudaine A, Gil-Lafon E, Cadoret R |
549 - 557 |
Spontaneous nucleation of cubic boron nitride single crystal by temperature gradient method under high pressure Taniguchi T, Yamaoka S |
558 - 564 |
Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation Lei CH, Van Tendeloo G, Siegert M, Schubert J, Buchal C |
565 - 573 |
Preparation and some physical properties of tetradymite-type Sb2Te3 single crystals doped with CdS Lost'ak P, Drasar C, Krejcova A, Benes L, Dyck JS, Chen W, Uher C |
574 - 578 |
Phase diagram of the CaS-Ga2S3 system and melt growth of CaGa2S4 single crystals Komatsu-Hidaka C, Takizawa T |
579 - 585 |
In-situ observation of silicon carbide sublimation growth by X-ray topography Kato T, Oyanagi N, Yamaguchi H, Nishizawa S, Khan MN, Kitou Y, Arai K |
586 - 590 |
Radial growth dynamics of nanowires Chen XL, Lan YC, Li JY, Cao YG, He M |
591 - 594 |
Reducing the grain size for fabrication of nanocrystalline diamond films Jiang N, Sugimoto K, Eguchi K, Inaoka T, Shintani Y, Makita H, Hatta A, Hiraki A |
595 - 606 |
The study of behaviour of surface supersaturation caused by variations in bulk supersaturation Rak M |
607 - 614 |
The influence of accelerated crucible rotation mode on the melt temperature field in the Stockbarger technique Distanov VE, Kirdyashkin AG |
615 - 626 |
Effects of bovine amelogenins on the crystal morphology of octacalcium phosphate in a model system of tooth enamel formation Iijima M, Moriwaki Y, Takagi T, Moradian-Oldak J |
627 - 629 |
Hydrothermal crystal growth of stishovite (SiO2) Lityagina LM, Dyuzheva TI, Nikolaev NA, Bendeliani NA |
630 - 636 |
Growth of platelets under diffusion conditions - Morphological stability investigation of platelets obtained on the zinc single crystals (I) Iwanov D |
637 - 644 |
Increase in dissolution rate of sodium chlorate induced by elastic strain Morel J, den Brok SWJ |
645 - 654 |
Coupled growth behavior in the rapidly solidified Ti-Al peritectic alloys Liu YC, Yang GC, Guo XF, Huang J, Zhou YH |
655 - 666 |
On the boundary conditions at a mush-melt interface Loper DE |
667 - 676 |
Effective distribution coefficients of a binary ideal solid solution controlled by kink kinetics Matsumoto N, Kitamura M |
677 - 684 |
Numerical simulation of magnetic field design for damping thermocapillary convection in a floating half-zone Li K, Hu WR |
685 - 691 |
On the stability of (001) Au/Ni artificially modulated structures grown by MBE Abadias G, Schuster I, Marty A, Gilles B, Deutsch T |