Journal of Crystal Growth

Journal of Crystal Growth, Vol.231, No.3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (16 articles)

317 - 321	Report on the growth of bulk aluminum nitride and subsequent substrate preparation Rojo JC, Slack GA, Morgan K, Raghothamachar B, Dudley M, Schowalter LJ
322 - 328	Structural and optical properties of thick freestanding GaN templates Freitas JA, Braga GCB, Moore WJ, Tischler JG, Culbertson JC, Fatemi M, Park SS, Lee SK, Park Y
329 - 334	Growth of GaN on (111) Si: a route towards self-supported GaN Lahreche H, Nataf G, Feltin E, Beaumont B, Gibart P
335 - 341	Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates Davis RF, Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M
342 - 351	The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy Gu SL, Zhang R, Shi Y, Zheng YD, Zhang L, Dwikusuma F, Kuech TF
352 - 356	III-N ternary epi-layers grown on the GaN bulk crystals Leszczynski M, Prystawko P, Czernecki R, Lehnert J, Suski T, Perlin P, Wisniewski P, Grzegory I, Nowak G, Porowski S, Albrecht M
357 - 365	Growth of GaN nanowires by direct reaction of Ga with NH3 He MQ, Zhou PZ, Mohammad SN, Harris GL, Halpern JB, Jacobs R, Sarney WL, Salamanca-Riba L
366 - 370	AlxGa1-xN for solar-blind UV detectors Sandvik P, Mi K, Shahedipour F, McClintock R, Yasan A, Kung P, Razeghi M
371 - 390	Modeling of threading dislocation reduction in growing GaN layers Mathis SK, Romanov AE, Chen LF, Beltz GE, Pompe W, Speck JS
391 - 396	Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes Kuball M, Hayes JM, Shi Y, Edgar JH, Prins AD, van Uden NWA, Dunstan DJ
397 - 406	Effective electronic masses in wurtzite and zinc-blende GaN and AlN Persson C, da Silva AF, Ahuja R, Johansson B
407 - 414	First-principle calculations of optical properties of wurtzite AlN and GaN Persson C, Ahuja R, da Silva AF, Johansson B
415 - 419	Cubic III-nitrides - a key to understand radiative recombination in nitride hetero structures? Lischka K
420 - 427	Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems Fernandez JRL, Araujo CM, da Silva AF, Leite JR, Sernelius BE, Tabata A, Abramof E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K
428 - 436	New valence control and spin control method in GaN and AlN by codoping and transition atom doping Katayama-Yoshida H, Kato R, Yamamoto T
VII - VII	Bulk nitride growth and related techniques - International Specialist Meeting on Bulk Nitride Growth and Related Techniques - Foz Do Iguacu, Brazil, 12-16 November 2000 - Preface Kuech TF