Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (23 articles)

359 - 362	Sb surfactant-mediated growth of strained InGaAs multiple-quantum wells by metalorganic vapor phase epitaxy at low growth temperatures Sato T, Mitsuhara M, Kondo Y
363 - 367	Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire Kappers MJ, Moram MA, Rao DVS, McAleese C, Humphreys CJ
368 - 372	Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy Imura M, Nakajima K, Liao M, Koide Y, Amano H
373 - 377	InN layers grown by MOCVD on SrTiO3 substrates Jia CH, Chen YH, Zhou XL, Liu GH, Guo Y, Liu XL, Yang SY, Wang ZG
378 - 381	Fabrication of semiconducting SrB6-delta thin films on ultrasmooth sapphire substrates by laser molecular beam epitaxy Kato Y, Shiraishi N, Tsuchimine N, Kobayashi S, Yoshimoto M
382 - 385	Growth and structure of MBE-grown PbTiO3 epilayers by using RF atomic oxygen source Zhang CJ, Chen YF, Wang ZG, Tian BL, Chen C, Deng XW, Liu M, Zhang Y, Liu XZ, Li YR
386 - 390	Antimony doped whiskers of SnO2 grown from vapor phase Zaytsev VB, Zhukova AA, Rumyantseva MN, Dobrovolsky AA, Calvo L, Gaskov AM
391 - 396	Self-assembly in the growth of precious opal Stewart AM, Chadderton LT, Senior BR
397 - 401	Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV-visible and Thermogravimetric-Differential thermal characterizations Pandian MS, In UC, Ramasamy P, Manyum P, Lenin M, Balamurugan N
402 - 412	The epitaxial role of silica groups in promoting the formation of silica/carbonate biomorphs: A first hypothesis Bittarello E, Massaro FR, Aquilano D
413 - 419	Conventional slow evaporation and Sankaranarayanan-Ramasamy (SR) method grown diglycine zinc chloride (DGZC) single crystal and its comparative study Pandian MS, Ramasamy P
420 - 425	Investigation on rapid growth of 4-N,N-dimethylamino-4'-N'-methylstilbazolium p-toluenesulphonate (DAST) crystals by SNM technique Vijay RJ, Melikechi N, Kumar TR, Jesudurai JGM, Sagayaraj P
426 - 430	One-pot hydrothermal synthesis of CeO2 hollow microspheres Yang ZJ, Liu L, Liang H, Yang HX, Yang YZ
431 - 436	Using an organic additive to manipulate sizes of perylene nanoparticles Oliveira D, Baba K, Mori J, Miyashita Y, Kasai H, Oikawa H, Nakanishi H
437 - 442	Structural and electrical properties of single crystal indium doped ZnO films synthesized by low temperature solution method Quang LH, Kuan LS, Liang GGK
443 - 446	Laser heated pedestal growth and characterization of the crystalline fibers of KDP doped L-arginine phosphate Singh S, Lal B
447 - 451	Morphology and stress evolution of InAs QD grown and annealed in-situ at high temperature Hu DZ, Trampert A, Schaadt DM
452 - 456	Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO Shimada S, Otani H, Miura A, Sekiguchi T, Yokoyama M
457 - 460	Growth and electric properties of 0.96Na(0.5)Bi(0.5)TiO(3)-0.04BaTiO(3) single crystal Zhang QH, Zhang YY, Wang FF, Lin D, Li XB, Zhao XY, Luo HS
461 - 465	Hydrothermal crystal growth of yttrium and rare earth stabilized hafnia Mann M, Kolis J
466 - 470	Investigations for the growth of large underdoped Bi2Sr2CaCu2O8+delta single crystals De Almeida-Didry S, Giovannelli F, Monot-Laffez I, Sidis Y, Bourges P, Sohoenstein F, Pruvost S, Pignon B
471 - 477	Structural and magnetic properties of single-crystalline spinel systems ZnCr2-x InxSe(4) Skrzypek D, Malicka E, Waskowska A, Cichon A
478 - 481	Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111) Kim DK