Journal of Crystal Growth

Journal of Crystal Growth, Vol.213, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (27 articles)

207 - 213	Vertical Bridgman growth of AlxGa1-xSb single crystals Huang WD, Naritsuka S, Nishinaga T
214 - 220	High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs Villar C, Sanz-Hervas A, Aguilar M, Vaccaro PO, Abril EJ, Lopez M, Fujita K
221 - 228	X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum Oyama Y, Nishizawa J, Seo K, Suto K
229 - 234	Comparison of binary and ternary growth over trenches using MOVPE Hofmann L, Knauer A, Rechenberg I, Zeimer U, Weyers M
235 - 240	Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy Kim C, Yang M, Lee W, Yi J, Kim S, Choi Y, Yoo TK, Kim ST
241 - 249	Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy Sharma TK, Gokhale MR, Arora BM
250 - 258	Indium thallium phosphide: experiments versus predictions Chandvankar SS, Sharma TK, Shah AP, Chandrasekaran KS, Arora BM, Kapoor AK, Verma D, Sharma BB
259 - 266	Influence of Te inclusions and precipitates on the crystalline and thermal properties of CdTe single crystals Rodriguez ME, Zelaya-Angel O, Bueno JJP, Jimenez-Sandoval S, Tirado L
267 - 275	Contactless growth of ZnSe single crystals by physical vapor transport Su CH, George MA, Palosz W, Feth S, Lehoczky SL
276 - 282	Tentative analysis of Swirl defects in silicon crystals Fan TW, Qian JJ, Wu J, Lin LY, Yuan J
283 - 287	Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration Huang XM, Taishi T, Yonenaga I, Hoshikawa K
288 - 298	Dislocations in dendritic web silicon Morelhao SL, Hartwig J, Meier DL
299 - 307	Composition and morphology of SiGe alloys grown on Si(100) using an Sb surfactant Jernigan GG, Silvestre CL, Fatemi M, Twigg ME, Thompson PE
308 - 311	Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe Li DZ, Huang CJ, Cheng BW, Wang HJ, Yu Z, Zhang CH, Yu JZ, Wang QM
312 - 318	Liquid-phase epitaxial growth of REBa2Cu3O7-delta (RE = Y, Yb, Er) thick films at reduced temperatures Qi X, MacManus-Driscoll JL
319 - 327	Single-crystal growth of Tb0.4Y0.6Ni2B2C compounds by the floating-zone method Bitterlich H, Loser W, Behr G, Graw G, Yang-Bitterlich W, Kramer U, Schultz L
328 - 333	Effects of hydrogen ion bombardment and boron doping on (001) polycrystalline diamond films Xia YB, Sekiguchi T, Zhang WJ, Jiang X, Wu WH, Yao T
334 - 339	Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications Verozubova GA, Gribenyukov AI, Korotkova VV, Semchinova O, Uffmann D
340 - 354	"Bending" of steps on rapidly grown KH2PO4 crystals due to an inhomogeneous surface supersaturation field Robey HF, Potapenko SY, Summerhays KD
355 - 367	Ex situ microscopic observation of the lateral instability of macrosteps on the surfaces of rapidly grown KH2PO4 crystals Robey HF, Potapenko SY
368 - 380	Calcite growth inhibition by copper(II) II. Effect of solution composition Parsiegla KI, Katz JL
381 - 388	Spontaneous precipitation of struvite from aqueous solutions Bouropoulos NC, Koutsoukos PG
389 - 394	Effect of EDTA on the metastable zone width of ADP Rajesh NP, Meera K, Srinivasan K, Raghavan PS, Ramasamy P
395 - 407	Suppressing three-dimensional unsteady flows in vertical zone-melting by steady ampoule rotation Lan CW, Liang MC, Chian CH
408 - 410	Formation of GaN nanorods by a sublimation method Li JY, Chen XL, Qiao ZY, Cao YG, Lan YC
411 - 414	Formation of diamond in the system of Ag2CO3 and graphite at high pressure and high temperatures Sun LL, Akaishi M, Yamaoka S
415 - 418	Growth and noncritical phase-matching third-harmonic-generation of GdxY1-xCa4O(BO3)(3) crystal Zhang SJ, Cheng ZX, Zhang SJ, Han JR, Sun LK, Chen HC