Journal of Crystal Growth

Journal of Crystal Growth, Vol.230, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (53 articles)

IX - IX	Gallium nitride EGW-4: 2000 - Proceedings of the Fourth European Workshop on Gallium Nitride Nottingham, UK, 2-5 July 2000 - Preface Orton J, Harrison I, Foxon T
341 - 345	Lateral confined epitaxy of GaN layers on Si substrates Zamir S, Meyler B, Salzman J
346 - 350	Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates Honda Y, Kawaguchi Y, Ohtake Y, Tanaka S, Yamaguchi M, Sawaki N
351 - 356	Enhanced two-dimensional growth of MOVPE InN films on sapphire (0001) substrates Yamamoto A, Adachi M, Hashimoto A
357 - 360	Thermally induced stress in GaN layers with regard to film coalescence Einfeldt S, Bottcher T, Figge S, Hommel D
361 - 367	In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs Balmer RS, Pickering C, Kier AM, Birbeck JCH, Saker M, Martin T
368 - 371	Optical and electrical properties of Be doped GaN bulk crystals Suski T, Litwin-Staszewska E, Perlin P, Wisniewski P, Teisseyre H, Grzegory I, Bockowski M, Porowski S, Saarinen K, Nissila J
372 - 376	Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy Aujol E, Trassoudaine A, Siozade L, Pimpinelli A, Cadoret R
377 - 380	Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy Wang CX, Chung HYA, Seyboth M, Kamp M, Ebeling KJ, Beccard R, Heuken M
381 - 386	Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer Paskova T, Valcheva E, Birch J, Tungasmita S, Persson POA, Paskov PP, Evtimova S, Abrashev M, Monemar B
387 - 391	Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer Kusakabe K, Kishino K, Kikuchi A, Yamada T, Sugihara D, Nakamura S
392 - 397	Growth of AlN films on SiC substrates by RF-MBE and RF-MEE Teraguchi N, Suzuki A, Saito Y, Yamaguchi T, Araki T, Nanishi Y
398 - 404	Microstructure and composition analysis of group III nitrides by X-ray scattering Fewster PF, Andrew NL, Foxon CT
405 - 409	Study of group-III binary and ternary nitrides using X-ray absorption fine structure measurements Katsikini M, Paloura EC, Antonopoulos J, Bressler P, Moustakas TD
410 - 414	Profiling band structure in GaN devices by electron holography Cherns D, Mokhtari H, Jiao CG, Averbeck R, Riechert H
415 - 420	A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy Marlafeka S, Bock N, Cheng TS, Novikov SV, Winser AJ, Harrison I, Foxon CT, Brown PD
421 - 425	MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrational and optical properties As DJ, Frey T, Bartels M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR
426 - 431	Hexagonal AlN films grown on nominal and off-axis Si(001) substrates Lebedev V, Jinschek J, Krausslich J, Kaiser U, Schroter B, Richter W
432 - 437	Ab initio study of the effect of doping on stacking faults in GaN Chisholm JA, Bristowe PD
438 - 441	Chemical mapping of InGaN MQWs Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A, Humphreys C
442 - 447	Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals Frayssinet E, Knap W, Krukowski S, Perlin P, Wisniewski P, Suski T, Grzegory I, Porowski S
448 - 453	Indium content determination related with structural and optical properties of InGaN layers Pereira S, Correia MR, Monteiro T, Pereira E, Soares MR, Alves E
454 - 458	Ion implantation effects on the microhardness and microstructure of GaN Kavouras P, Katsikini M, Vouroutzis N, Lioutas CB, Paloura EC, Antonopoulos J, Karakostas T
459 - 461	Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field Jacobson MA, Konstantinov OV, Nelson DK, Romanovskii SO, Hatzopoulos Z
462 - 466	Polar optical phonon scattering and negative Kromer-Esaki-Tsu differential conductivity in bulk GaN Bulutay C, Ridley BK, Zakhleniuk NA
467 - 472	Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs Xia R, Xu H, Harrison I, Beaument B, Andrianov A, Dods SRA, Morgan JM, Larkins EC
473 - 476	Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport Pozina G, Bergman JP, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
477 - 480	Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates Kirilyuk V, Zauner ARA, Christianen PCM, Weyher JL, Hageman PR, Larsen PK
481 - 486	Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells Henley SJ, Bewick A, Cherns D, Ponce FA
487 - 491	Magneto-photoluminescence of AlGaN/GaN quantum wells Shields PA, Nicholas RJ, Grandjean N, Massies J
492 - 496	Charge storage and screening of the internal field in GaN/AlGaN quantum wells Traetta G, Di Carlo A, Reale A, Lugli P, Lomascolo M, Passaseo A, Cingolani R, Bonfiglio A, Berti M, Napolitani E, Natali M, Sinha SK, Drigo AV
497 - 502	Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates Zehnder U, Weimar A, Strauss U, Fehrer M, Hahn B, Lugauer HJ, Harle V
503 - 506	Emission studies of InGaN layers and LEDs grown by plasma-assisted MBE Laukkanen P, Lehkonen S, Uusimaa P, Pessa M, Seppala A, Ahlgren T, Rauhala E
507 - 511	Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC Baur J, Strauss U, Bruederl G, Eisert D, Oberschmid R, Hahn B, Lugauer HJ, Bader S, Zehnder U, Fehrer M, Harle V
512 - 516	GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics Schwegler V, Schad SS, Scherer M, Kamp M, Ulu G, Emsley M, Unlu MS, Lell A, Bader S, Hahne B, Lugauer HJ, Kuhn F, Weimar A, Harle V
517 - 521	Spatially and spectrally resolved measurement of optical loss in InGaN laser structures Summers HD, Smowton PM, Blood P, Dineen M, Perks RM, Bour DP, Kneissel M
522 - 526	Analysis of the threshold current in nitride-based lasers Hangleiter A, Heppel S, Off J, Kuhn B, Scholz F, Bader S, Hahn B, Harle V
527 - 532	Blue emission from arsenic doped gallium nitride Winser AJ, Harrison I, Novikov SV, Davis CS, Campion R, Cheng TS, Foxon CT
533 - 536	Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers Li W, Turpeinen J, Melanen P, Savolainen P, Uusimaa P, Pessa M
537 - 543	AlGaN-based UV photodetectors Monroy E, Calle F, Pau JL, Munoz E, Omnes F, Beaumont B, Gibart P
544 - 548	AlGaN photodetectors grown on Si(111) by molecular beam epitaxy Pau JL, Monroy E, Munoz E, Naranjo FB, Calle F, Sanchez-Garcia MA, Calleja E
549 - 553	Multiple-step annealing for 50% enhanced p-conductivity of GaN Chung HYA, Pelzmann A, Drechsler M, Scherer M, Schwegler V, Seyboth M, Kirchner C, Kamp M
554 - 557	Characterization of etched facets for GaN-based lasers Scherer M, Schwegler V, Seyboth M, Eberhard F, Kirchner C, Kamp M, Ulu G, Unlu MS, Gruhler R, Hollricher O
558 - 563	Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurements Dumont J, Monroy E, Munoz E, Caudano R, Sporken R
564 - 568	Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres Mistele D, Fedler F, Klausing H, Rotter T, Stemmer J, Semchinova OK, Aderhold J
569 - 572	A comparison of commercial sources of epitaxial material for GaN HFETs fabrication Wallis RH, Davies RA, Jones SK, Beanland R, Phillips WA
573 - 578	Material optimisation for AlGaN/GaN HFET applications Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque JL, Humphreys C
579 - 583	Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs Uren MJ, Lee D, Hughes BT, Parmiter PJM, Birbeck JC, Balmer R, Martin T, Wallis RH, Jones SK
584 - 589	Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE Webb JB, Tang H, Bardwell JA, Moisa S, Peters C, MacElwee T
590 - 595	Impedance spectroscopy analysis of AlGaN/GaN HFET structures Paszkiewicz B
596 - 601	Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers Nguyen ND, Germain M, Schmeits M, Evrard R, Schineller B, Heuken M
602 - 606	Electrical properties of photoanodically generated thin oxide films on n-GaN Rotter T, Ferretti R, Mistele D, Fedler F, Klausing H, Stemmer J, Semchinova OK, Aderhold J, Graul J
607 - 610	Polarization induced 2D hole gas in GaN/AlGaN heterostructures Hackenbuchner S, Majewski JA, Zandler G, Vogl P