| 333 - 340 |
A thermal analysis of the horizontal zone refining of indium antimonide
Roussopoulos GS, Rubini PA |
| 341 - 347 |
Phase separation in InAlAs grown by MOVPE with a low growth temperature
Kurihara K, Takashima M, Sakata K, Ueda R, Takahara M, Ikeda H, Namita H, Nakamura T, Shimoyama K |
| 348 - 352 |
Effect of interlayer on optical properties of InGaAsN/GaAs quantum well grown by metalorganic chemical vapor deposition
Cuong TV, Kim TS, Park JY, Hong CH, Suh EK |
| 353 - 357 |
A novel low-temperature method to grow single-crystal ZnO nanorods
Tao DL, Qian WZ, Huang Y, Wei F |
| 358 - 367 |
Dislocation density analysis of GaAs bulk single crystal during ingot annealing process (comparison among several computational methods)
Miyazaki N, Kumamoto A, Harada C |
| 368 - 375 |
New approach to remove crystal originated pits in Czochralski-grown silicon: combination of germanium ion implantation with solid-phase epitaxy
Xiao QG, Tu H |
| 376 - 384 |
Parameter study of intrinsic carbon doping of AlxGa1-xAs by MOCVD
van Deelen J, Bauhuis GJ, Schermer JJ, Larsen PK |
| 385 - 390 |
State filling phenomena in modulation-doped InAs quantum dots
Park YM, Park YJ, Kim KM, Shin JC, Song JD, Lee JI, Yoo KH |
| 391 - 397 |
Point defect study from low photoluminescence of the CdIn2S4 films grown by hot wall epitaxy method
You SH, Hong KJ, Jeong TS, Youn CJ, Park JS, Lee BJ, Jeong JW |
| 398 - 402 |
Simple practical processing of a large single crystal from a large amount of a complete stoichiometric mixture in two-component system
Ito K, Sato H, Kanazawa H, Tamada O, Kitazawa T, Koike M, Takei H |
| 403 - 408 |
Synthesis, optical, and magnetic properties of Zn1-xMnxS nanowires grown by thermal evaporation
Yuan HJ, Yan XQ, Zhang ZX, Liu DF, Zhou ZP, Cao L, Wang JX, Gao Y, Song L, Liu LF, Zhao XW, Dou XY, Zhou WY, Xie SS |
| 409 - 419 |
Homoepitaxial diamond growth by high-power microwave-plasma chemical vapor deposition
Teraji T, Ito T |
| 420 - 424 |
Observation of room-temperature ferromagnetism in (Al,Mn)N thin films
Ham MH, Yoon S, Park Y, Myoung JM |
| 425 - 434 |
CVD-diamond single-crystal growth
Schwarz S, Rottmair C, Hirmke J, Rosiwal S, Singer RF |
| 435 - 444 |
High-homogeneity high-performance flux-grown Pb(Zn1/3Nb2/3)O-3-(6-7)%PbTiO3 single crystals
Lim LC, Rajan KK |
| 445 - 449 |
Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals
Akazawa T, Inaguma Y, Katsumata T, Hiraki K, Takahashi T |
| 450 - 455 |
Growth and characterization of InAs quantum dots on Si(001) substrates
Zhao ZM, Hul'ko O, Kim HJ, Liu J, Sugahari T, Shi B, Xie YH |
| 456 - 461 |
Sonochemical synthesis of bismuth selenide nanobelts at room temperature
Cui HM, Liu H, Wang JY, Li X, Han F, Boughton RI |
| 462 - 468 |
Influence of the deposition parameters on the biaxial alignment of MgO grown by unbalanced magnetron sputtering
Ghekiere P, Mahieu S, De Winter G, De Gryse R, Depla D |
| 469 - 473 |
Growth and optical properties of In : Er : LiNbO3 crystals
Zhen XH, Xu WS, Li Q, Xu YH |
| 474 - 480 |
Reversing radial segregation and suppressing morphological instability during Bridgman crystal growth by angular vibration
Yu WC, Chen ZB, Hsu WT, Roux B, Lyubimova TP, Lan CW |
| 481 - 494 |
An analytical model for non-equilibrium segregation during crystallization
Jackson KA, Beatty KM, Gudgel KA |
| 495 - 512 |
Monte Carlo modeling of dopant segregation
Beatty KM, Jackson KA |
