321 - 326 |
Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga plus Bi) Saravanan S, Baskar K, Soga T, Jimbo T, Umeno M |
327 - 334 |
Arsenic-doped GaN grown by molecular beam epitaxy Foxon CT, Novikov SV, Cheng TS, Davis CS, Campion RP, Winser AJ, Harrison I |
335 - 345 |
Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques Pan JL, Fonstad CG, Matney K |
346 - 352 |
Effect of solution thickness on ZnSe crystals grown from Se/Te mixed solutions Kato H, Udono H, Kikuma I |
353 - 360 |
Growth of dislocation-free ZnSe single crystal by CVT method Fujiwara S, Namikawa Y, Irikura M, Matsumoto K, Kotani T, Nakamura T |
361 - 367 |
Polarity effects of substrate surface in homoepitaxial ZnO film growth Zhu S, Su CH, Lehoczky SL, Harris MT, Callahan MJ, McCarty P, George MA |
368 - 378 |
Enhancement in the crystalline quality of palladium silicide films: multiple versus single deposition Mirowski E, Leone SR |
379 - 384 |
The shift of the growth interface during the Bridgman process due to the solute redistribution Jie WQ |
385 - 389 |
Growth of large PrBa2Cu3O7-delta single crystals by modified TSSG method using zirconium dioxide crucibles Zhokhov AA, Emelchenko GA, Naumenko IG, Barilo SN, Khasanov SS, Zverkov SA, Lynn JW |
390 - 396 |
Liquid injection metal organic chemical vapour deposition of lead-scandium-tantalate thin films for infrared devices Crosbie MJ, Lane PA, Wright PJ, Williams DJ, Jones AC, Leedham TJ, Reeves CL, Jones J |
397 - 403 |
Structural studies of epitaxial BaTiO3 film deposited on MgO-buffered r-plane cut sapphire Lei CH, Jia CL, Lisoni JG, Siegert M, Schubert J, Buchal C, Urban K |
404 - 408 |
The colossal magnetoresistance (LaxSn1-x)(y)MnO3-delta films studied by X-ray photoemission spectroscopy Guo XX, Chen ZH, Cui DF, Zhou YL, Huang HZ, Zhang HX, Liu FQ, Ibrahim K, Qian HJ |
409 - 412 |
Growth of Na0.95K0.05Y(WO4)(2) crystals Cheng ZX, Zhang SJ, Han JR, Chen HC, Hua Y |
413 - 418 |
Domain walls characterization of the opposite domain lithium niobate structures Bermudez V, Caccavale F, Dieguez E |
419 - 422 |
Fabrication of homostructural ZnO p-n junctions Ryu YR, Kim WJ, White HW |
423 - 433 |
Effects of diabetic human blood addition on morphology of cupric chloride dendrites grown from aqueous solutions Shibata T, Matsumoto S, Kogure M, Iguchi T, Tanaka A, Nagano T, Ogawa T |
434 - 443 |
Thermodynamic analysis of molecular beam epitaxy of MgO(s) I. MgO vaporization by electron bombardment Vassent JL, Marty A, Gilles B, Chatillon C |
444 - 450 |
Thermodynamic analysis of molecular beam epitaxy of MgO(s) II. Epitaxial growth of MgO layers on Fe(001) substrates Vassent JL, Marty A, Gilles B, Chatillon C |
451 - 464 |
Secondary nucleation of gibbsite crystals from synthetic Bayer liquors: effect of alkali metal ions Li J, Prestidge CA, Addai-Mensah J |
465 - 476 |
Solute convection during the whole process of protein crystal growth Qi JW, Wakayama NI |
477 - 480 |
The effect of benzotriazoles on calcium carbonate scale formation Zafiropoulou A, Dalas E |
481 - 484 |
Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals Naoi H, Shaw DM, Collins GJ, Sakai S |
485 - 488 |
Synthesis of titanium carbide nanowires Qi SR, Huang XT, Gan ZW, Ding XX, Cheng Y |
489 - 494 |
Recrystallization mechanism for the grain refinement in undercooled DD3 single-crystal superalloy Liu F, Guo XF, Yang GC |
495 - 495 |
Self-assembled InAs quantum wires on InP (001) (vol 219, pg 180, 2000) Wu J, Zeng YP, Sun ZZ, Lin F, Xu B, Wang ZG |