Journal of Crystal Growth

Journal of Crystal Growth, Vol.220, No.4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (40 articles)

341 - 344	Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy Lima AP, Miskys CR, Karrer U, Ambacher O, Wenzel A, Rauschenbach B, Stutzmann M
345 - 350	Crystal growth of the quasi-one dimensional spin-magnet LiCuVO4 Prokofiev AV, Wichert D, Assmus W
351 - 354	Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy Zhang YH, Lu LW, Zhang MH, Huang Q, Bao CL, Zhou JM
355 - 363	AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs Umeno A, Bacchin G, Nishinaga T
364 - 378	Lateral OMVPE growth of GaAs on patterned substrates Reichert W, Cohen RM
379 - 383	Transmission electron microscopy study of hexagonal GaN film grown on GaAs (001) substrate by using AlAs nucleation layer Wan L, Duan XF, Chen H, Liu HF, Li ZQ, Huang Q, Zhou JM
384 - 392	Surface reconstruction phase diagrams for InAs, AlSb, and GaSb Bracker AS, Yang MJ, Bennett BR, Culbertson JC, Moore WJ
393 - 400	Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition Tateno K, Amano C
401 - 404	Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN Kangawa Y, Ito T, Mori A, Koukitu A
405 - 412	Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique Ramaiah KS, Su YK, Chang SJ, Juang FS, Chen CH
413 - 424	Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies Nakajima K, Ujihara T, Sazaki G, Usami N
425 - 431	Difference of anisotropic structures of InAs/GaAs quantum dots between organometallic vapor-phase epitaxy and molecular beam epitaxy Furukawa Y, Noda S
432 - 438	Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions Ng HM, Gmachl C, Chu SNG, Cho AY
439 - 443	Strain-compensated quantum cascade lasers operating at room temperature Liu FQ, Ding D, Xu B, Zhang YZ, Zhang QS, Wang ZG, Jiang DS, Sun BQ
444 - 448	High-temperature conductivity of solid and liquid CdTe Hoschl P, Belas E, Turjanska L, Grill R, Franc J, Fesh R, Moravec P
449 - 456	Facets formation of pyramidal Si nanocrystals selectively grown on Si(001) windows in ultrathin SiO2 films Shibata M, Nitta Y, Fujita K, Ichikawa M
457 - 460	The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy Gao F, Huang DD, Li JP, Lin YX, Kong MY, Li JM, Zeng YP, Lin LY
461 - 465	Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY
466 - 470	Large-scale synthesis of ultrafine Si nanoparticles by ball milling Lam C, Zhang YF, Tang YH, Lee CS, Bello I, Lee ST
471 - 479	Cellular-automata-based simulation of anisotropic crystal growth Chahoud M, Fehly D, Wehmann HH, Schlachetzki A
480 - 487	Crystal growth and characterization of the CMR compound La-1.2(Sr,Ca)(1.8)Mn2O7 Velazquez M, Haut C, Hennion B, Revcolevschi A
488 - 493	Enhanced thermal stability of NiSi films on Si(111) substrates by a thin Pt interlayer Liu JF, Chen HB, Feng JY
494 - 500	Structural investigation of gallium oxide (beta-Ga2O3) nanowires grown by arc-discharge Park GS, Choi WB, Kim JM, Choi YC, Lee YH, Lim CB
501 - 509	Effects of SiO2 overlayer at initial growth stage of epitaxial Y2O3 film growth Cho MH, Ko DH, Choi YG, Lyo IW, Jeong K, Whang CN
510 - 514	Czochralski grown Ga2O3 crystals Tomm Y, Reiche P, Klimm D, Fukuda T
515 - 521	HREM investigations of intermediate ZnO and ZnO/Y-ZrO2 layers in Y-ZrO2 bicrystals and ZnO films grown on Y-ZrO2 bicrystal substrates Roddatis VV, Stepantsov EA, Kiselev NA
522 - 530	Etch studies on GaPO4 single crystals Grassl M, Barz RU, Gille P
531 - 537	Anomalous effect of temperature on atomic layer deposition of titanium dioxide Aarik J, Aidla A, Mandar H, Sammelselg V
538 - 542	Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure Zeng W
543 - 547	Growth of laser single-crystals Er : YVO4 by floating zone method Yan XL, Wu X, Zhou JF, Zhang ZG, Wang JG
548 - 553	Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers Wang SZ, Xie SW, Pang QJ, Zheng H, Xia YX, Ji RB, Wu Y, He L, Zhu ZM, Li GH, Wang ZP
554 - 559	Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition Wang H, Zhu Y, Ong PP
560 - 571	Computational modeling of SiC epitaxial growth in a hot wall reactor Ji W, Lofgren PM, Hallin C, Gu CY, Zhou G
572 - 578	Novel synthesis of gibbsite by laser-stimulated nucleation in supersaturated sodium aluminate solutions Blanks KA
579 - 591	Hydration of calcium sulfate hemihydrate (CaSO4 center dot 1/2H2O) into gypsum (CaSO4 center dot 2H(2)O). The influence of the sodium poly(acrylate)/surface interaction and molecular weight Boisvert JP, Domenech M, Foissy A, Persello J, Mutin JC
592 - 603	Microscopic study of polymorphism of a photographic coupler Li N, Shanks RA, Murphy DM
604 - 609	Low-pressure chemical vapor deposition of TaCN films by pyrolysis of ethylamido-tantalum Ohshita Y, Ogura A, Hoshino A, Hiiro S, Machida H
610 - 618	Physical chemistry of binary organic eutectic and monotectic alloys; 1,2,4,5-tetrachlorobenzene-beta-naphthol and 1,2,4,5-tetramethylbenzene-succinonitrile systems Rai US, Pandey P, Rai RN
619 - 630	Morphological instability due to double diffusive convection in directional solidification: the pit formation Lan CW, Tu CY
631 - 636	A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation Vladimirova M, Pimpinelli A, Videcoq A