| 693 - 696 |
Photodetector arrays from 100 mm diameter InGaAs/InP epitaxial wafers
Olsen GH, Dixon PE, Lange MJ, Sudol JJ, Cohen MJ, Sugg AR, Dries JC |
| 697 - 700 |
c-axis-oriented YBa2CU3O7-x thick films using multi-step deposition
Ueno Y, Sakakibara N |
| 701 - 705 |
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
Aderhold J, Davydov VY, Fedler F, Klausing H, Mistele D, Rotter T, Semchinova O, Stemmer J, Graul J |
| 706 - 718 |
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
Zheleva TS, Nam OH, Ashmawi WM, Griffin JD, Davis RF |
| 719 - 725 |
Accurate determination of the lattice constant of molecular beam epitaxial CdHgTe
Skauli T, Colin T |
| 726 - 734 |
Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures
Gray AL, Stintz A, Malloy KJ, Newell TC, Lester LF |
| 735 - 740 |
Electrochemical etching of highly conductive GaN single crystals
Nowak G, Xia XH, Kelly JJ, Weyher JL, Porowski S |
| 741 - 746 |
The application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth
Riesz F, Zytkiewicz ZR |
| 747 - 750 |
Growth of single crystals of bismuth molybdenum oxides
Yue S, Tian ML, Mao ZW, Chen L, Zhang YH |
| 751 - 754 |
Scintillation and mechanical properties of CsI(Tl,Br) crystals pulled from melt
Zaslavsky BG, Vasetsky SI, Kudin AM, Gres VY, Shpilinskaya LN, Charkina TA, Kovaleva LV, Mitichkin AI, Boyarintsev AN, Sumarokov SY |
| 755 - 759 |
Growth of zinc cadmium thiocyanate single crystal for laser diode frequency-doubling
Jiang XN, Xu D, Yuan DR, Lu MK, Guo SY, Zhang GH, Wang XQ, Fang Q |
| 760 - 766 |
The effect of NaCl melt-additive on the growth and morphology of LiB3O5 (LBO) crystals
Kim JW, Yoon CS, Gallagher HG |
| 767 - 772 |
Structural and optical characterization of Cu3N films prepared by reactive RF magnetron sputtering
Kim KJ, Kim JH, Kang JH |
| 773 - 778 |
Microstructural characterization of ultrarapid quenched bismuth and antimony tellurides alloys
Koukharenko E, Frety N, Shepelevich VG, Tedenac JC |
| 779 - 785 |
Single-crystal growth and phase diagram of Tb2Fe17 compound
Chen JL, Wu GH, Zhao DQ, Gao SX, Zhan WS, Li YX, Qu JP, Xu GZ |
| 786 - 790 |
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Li N, Fu L, Li N, Chan YC, Lu W, Shen SC, Tan HH, Jagadish C |
| 791 - 796 |
Microstructure of Al2O3/ZrO2 eutectic fibers grown by the micro-pulling down method
Lee JH, Yoshikawa A, Durbin SD, Yoon DH, Fukuda T, Waku Y |
| 797 - 800 |
Growth and properties of NaEr(WO4)(2) crystals
Cheng ZX, Lu QM, Zhang SJ, Liu JH, Yi XJ, Song F, Kong YF, Han JR, Chen HC |
| 801 - 805 |
Synthesis of large single crystals of templated Y faujasite
Ferchiche S, Valcheva-Traykova M, Vaughan DEW, Warzywoda J, Sacco A |
| 806 - 815 |
Influence of growth direction on the microstructure of unidirectionally solidified Cu-Pb monotectic alloy using zone-melt technique
Aoi I, Makoto I, Yoshida M, Fukunaga H, Nakae H |
| 816 - 821 |
Solidification with a quasiequilibrium mushy region: exact analytical solution of nonlinear model
Alexandrov DV |
| 822 - 831 |
Crystal growth in the presence of surface melting: supersaturation dependence of the growth of columnar ice crystals
Libbrecht KG, Yu H |
| 832 - 851 |
Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals
Klein O, Philip P, Sprekels J, Wilmanski K |
| 852 - 861 |
Shaped melt column optimal choice on the basis of an equilibrium growth angle value
Kuandykov LL, Antonov PI |
