611 - 615 |
Growth mechanism of high peritectic temperature Nd1+xBa2-xCu3O7-delta thick film on low peritectic temperature YBa2Cu3O7-delta seed film by liquid phase epitaxy Yao X, Nomura K, Nakamura Y, Izumi T, Shiohara Y |
616 - 622 |
Modulated growth of thick GaN with hydride vapor phase epitaxy Zhang W, Riemann T, Alves HR, Heuken M, Meister D, Kriegseis W, Hofmann DM, Christen J, Krost A, Meyer BK |
623 - 630 |
Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN Hansen M, Fini P, Craven M, Heying B, Speck JS, DenBaars SP |
631 - 636 |
GaInNAs quantum well structures for 1.55 mu m emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy Hakkarainen T, Toivonen J, Sopanen M, Lipsanen H |
637 - 645 |
MOCVD growth of device-quality GaN on sapphire using a three-step approach Liu BL, Lachab M, Jia A, Yoshikawaa A, Takahashi K |
646 - 653 |
Characterization of the islands nucleation in LPOMVPE grown In0.2Ga0.8As/GaAs multilayer in the near substrate/buffer interfacial regions Mogilyanski D, Gartstein E |
654 - 659 |
Microstructural characterization of Si cones fabricated by Ar+-sputtering Si/Mo targets Ma XL, Shang NG, Li Q, Lee CS, Bello I, Lee ST |
660 - 665 |
Liquid phase epitaxy growth of langasite film for resonators and oscillators Zhang H, Singh NB, Berghmans A, Adam JD, Tidrow S, Fazi C |
666 - 678 |
Preparation and structural analysis of Fe2+xTi1-x thin films in the C14 Laves phase stability range Koble J, Huth M |
679 - 682 |
Growth mechanism of single crystal NaFe4P12 nanowires Liu H, Hu XB, Wang JY, Zhang CQ, Zhao SR, Jiang HD, Gu MY, Zhang LM |
683 - 689 |
Spray pyrolysised tin disulphide thin film and characterisation Amalraj L, Sanjeeviraja C, Jayachandran M |
690 - 698 |
Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide Stuyven G, De Visschere P, Hikavyy A, Neyts K |
699 - 703 |
Growth and optical properties of ErCa4O(BO3)(3) crystals Jiang HD, Wang JY, Hu XB, Liu H, Zhang CQ, Teng B, Li J |
704 - 710 |
Formation of tetrahedral islands in epitaxial NiO layers deposited on MgO(111) Warot B, Snoeck E, Baules P, Ousset JC, Casanove MJ, Dubourg S, Bobo JF |
711 - 720 |
Computer simulation of growth process in synthetic quartz crystals grown from X-bar, Y-bar and rectangular Z-plate seeds Iwasaki H, Iwasaki F, Yokokawa H, Kurashige M, Oba K |
721 - 730 |
Mechanism and estimation of Al(OH)(3) crystal growth Farhadi F, Babaheidary MB |
731 - 739 |
Dendritic array growth in the systems NH4Cl-H2O and [CH2CN](2)-H2O: steady state measurements and analysis Hansen G, Liu S, Lu SZ, Hellawell A |
740 - 750 |
Dendritic array growth in the systems NH4Cl-H2O and [CH2CN](2)-H2O: the detachment of dendrite side arms induced by deceleration Liu S, Lu SZ, Hellawell A |
751 - 758 |
Dendritic array growth in the systems NH4Cl-H2O and [CH2CN](2)-H2O: dendrite tip behavior and the origin of side arm evolution Liu S, Lu SZ, Hellawell A |
759 - 761 |
Thermal gradient control at the solid-liquid interface in the laser-heated pedestal growth technique Andreeta MRB, Andreeta ERM, Hernandes AC, Feigelson RS |
762 - 772 |
General theory of multi-phase melt crystallization Charykov NA, Sherstnev VV, Krier A |
773 - 781 |
Composition and lattice structure of fivefold twinned nanorods of silver Hofmeister H, Nepijko SA, Ievlev DN, Schulze W, Ertl G |
782 - 785 |
Laser heated pedestal growth of Al2O3/GdAlO3 eutectic fibers Andreeta ERM, Andreeta MRB, Hernandes AC |