Journal of Crystal Growth

Journal of Crystal Growth, Vol.236, No.4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (30 articles)

501 - 510	The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry Voloshin AE, Lomov AA, Nishinaga T, Ge P, Huo C
511 - 515	Role of As-2 molecules on Ga-terminated GaAs(001) surfaces during the MBE growth Ishii A, Seino K, Aisaka T
516 - 522	Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors Wei X, Wang GH, Zhang GZ, Zhu XP, Ma XY, Chen LH
523 - 528	Dependence of Si melt flow in a crucible on surface tension variation in the Czochralski process Nakanishi H, Watanabe M, Terashima K
529 - 537	Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio Shin H, Arkun E, Thomson DB, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis RF
538 - 544	Effects of N+-implanted sapphire (0001) substrate on GaN epilayer Cho YS, Koh EK, Park YJ, Koh D, Kim EK, Moon Y, Leem SJ, Kim G, Byun D
545 - 550	3D numerical simulation and experimental investigations of melt flow in an Si Czochralski melt under the influence of a cusp-magnetic field Vizman D, Grabner O, Muller G
551 - 556	Method research and developing a method to control directed semiconductor crystallization in space Ginkin VP, Folomeev VI, Lukhanova TM, Rakov VV, Maronchuk II, Kartavykh AV, Egorov AV
557 - 562	Growth of Ge quantum dots on vicinal Si(001) substrate by solid phase epitaxy Hu DZ, Zhao DT, Jiang WR, Shi B, Fan YL, Jiang ZM
563 - 571	Pit formation during the morphological evolution of InGaAs/GaAs Chokshi N, Bouville M, Millunchick JM
572 - 576	RuSi2: evidence of a new binary phase in the ruthenium-silicon system Ivanenko L, Behr G, Spinella CR, Borisenko VE
577 - 582	Structural characteristics and field electron emission properties of nano-diamond/carbon films Jiang N, Eguchi K, Noguchi S, Inaoka T, Shintani Y
583 - 588	SrZrO3 single crystal growth by floating zone technique with radiation heating Souptel D, Behr G, Balbashov AM
589 - 595	Growth of large-size crystal of PbWO4 by vertical Bridgman method with multi-crucibles Yang PZ, Liao JY, Shen BF, Shao PF, Ni HH, Yin ZW
596 - 608	A volume radiation heat transfer model for Czochralski crystal growth processes Nunes EM, Naraghi MHN, Zhang H, Prasad V
609 - 612	New magnetic materials in ZnGeP2-Mn chalcopyrite system Medvedkin GA, Hirose K, Ishibashi T, Nishi T, Voevodin VG, Sato K
613 - 616	The growth of BaBPO5 crystals from Li4P2O7 flux Pan SL, Wu YC, Fu PZ, Zhang GC, Wang GF, Guan XG, Chen CT
617 - 620	Crystal growth of REMn2Si2 (RE = Y, Er) by a Pb flux method Okada S, Ogawa M, Shishido T, Iizumi K, Kudou K, Kanari H, Nakajima K, Rogl P
621 - 626	Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD Motlan, Goldys EM, Tansley TL
627 - 634	Preparation of nanocrystalline bismuth sulfide thin films by asynchronous-pulse ultrasonic spray pyrolysis technique Wang SY, Du YW
635 - 639	Heteroepitaxial growth of MgO films on Si(001) substrates using cubic SiC as a buffer layer Lee SY, Lee SH, Nah EJ, Lee SS, Kim Y
640 - 646	Growth of Ba1-xCaxTiO3 single-crystal fibers by a laser heated pedestal method Chen JC, Chen CY
647 - 654	Self-assembling quantum dot lattices through nucleation site engineering Gerardot BD, Subramanian G, Minvielle S, Lee H, Johnson JA, Schoenfeld WV, Pine D, Speck JS, Petroff PM
655 - 660	Ti-Si compounds formation by high-current ion implantation Liu ZQ, Feng JY, Li WZ
661 - 666	XPS and AFM investigations of annealing induced surface modifications of MgO single crystals Aswal DK, Muthe KP, Tawde S, Chodhury S, Bagkar N, Singh A, Gupta SK, Yakhmi JV
667 - 670	Investigations on the solidification behavior of alkaline earth borates Sabharwal SC, Sangeeta
671 - 675	Czochralski growth and topographic study of tetragonal (La,Sr)(AI,Ta)O-3 single crystals Xiao JZ, Shao MJ, Tian YL, Huang WX, Wang AH, Yin ST
676 - 686	Effects of solvent composition and temperature on polymorphism and crystallization behavior of thiazole-derivative Kitamura M, Nakamura K
687 - 694	Theoretical study on chemical vapor transport of ZnS-I-2 system. Part I. Kinetic process and one-dimensional model Zuo R, Wang WK
695 - 710	Theoretical study on chemical vapor transport of ZnS-I-2 system. Part II: numerical modeling Zuo R, Wang WK