| IX - IX |
Dedication to Prof. August (Gus) F Witt
Feigelson RS |
| XI - XVI |
50 years of progress in crystal growth - Preface
Feigelson RS |
| 499 - 518 |
Notes on interface growth kinetics 50 years after Burton, Cabrera and Frank
Chernov AA |
| 519 - 529 |
Constitutional supercooling surface roughening
Jackson KA |
| 530 - 540 |
Morphology: from sharp interface to phase field models
Sekerka RF |
| 541 - 549 |
Dendritic crystal growth in pure materials
Glicksman ME, Lupulescu AO |
| 550 - 564 |
A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors
Hurle DTJ, Rudolph P |
| 565 - 577 |
Research on macro- and microsegregation in semiconductor crystals grown from the melt under the direction of August F Witt at the Massachusetts Institute of Technology
Wang CA, Carlson D, Motakef S, Wiegel M, Wargo MJ |
| 578 - 592 |
Progress in the melt growth of III-V compounds
Mullin JB |
| 593 - 604 |
Czochralski growth of oxides
Brandle CD |
| 605 - 619 |
Basic studies of molecular beam epitaxy - past, present and some future directions
Joyce BA, Joyce TB |
| 620 - 630 |
Development and current status of organometallic vapor phase epitaxy
Stringfellow GB |
| 631 - 638 |
Fundamentals and applications: a 50-year retrospective of the Japanese crystal growth community
Sunagawa I |
