445 - 449 |
Growth and luminescent properties of Pr : KY3F10 single crystal Yoshikawa A, Kamada K, Nikl M, Aoki K, Sato H, Pejchal J, Fukuda T |
450 - 458 |
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes Tinjod F, de Mierry P, Lancefield D, Bougrioua Z, Laugt S, Tottereau O, Lorenzini P, Chenot S, Virey E, Kokta MR, Stone-Sundberg JL, Pauwels D |
459 - 465 |
Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure Peng CT, Chen NF, Wu JL, Yin ZG, Yu Y |
466 - 472 |
Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition Hao MS, Egawa T, Ishikawa H |
473 - 480 |
Ultra-low-temperature homoepitaxial growth of Sb-doped silicon Blacksberg J, Hoenk ME, Nikzad S |
481 - 485 |
Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates Lin JC, Su YK, Chang SJ, Chen WR, Chen RY, Cheng YC, Lin WJ |
486 - 490 |
High growth rates (> 30 mu m/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor Myers RL, Shishkin Y, Kordina O, Saddow SE |
491 - 498 |
Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition Gu JH, Zhou YQ, Zhu MF, Liu FZ, Liu JL |
499 - 505 |
Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques Ru G, Yu X, Chen Z, Zhang J, Lin J, Choa FS |
506 - 513 |
High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition Lu P, Edgar JH, Glembocki OJ, Klein PB, Glaser ER, Perrin J, Chaudhuri J |
514 - 520 |
Epitaxial Fe3Si filMS stabilized on GaAs(113)A substrates Muduli PK, Herfort J, Schonherr HP, Ploog KH |
521 - 526 |
Preparation and study of stoichlometric ZnO by MOCVD technique Wang X, Yang TP, Du GT, Liang HW, Chang YC, Liu WF, Xu YB |
527 - 533 |
Single crystal Ag7Te4 nanowire arrays prepared by DC electrodeposition from aqueous solution Jia C, Zhang B, Liu WF, Jin CG, Yao LZ, Cai WL, Li XG |
534 - 540 |
Shape-controlled synthesis of Cu2O nanocrystals assisted by triton X-100 Luo F, Wu D, Gao L, Lian SY, Wang EB, Kang ZH, Lan Y, Xu L |
541 - 548 |
Supersaturation-controlled synthesis of two types of single-sided ZnO comb-like nanostructures by thermal evaporation at low temperature Zhang YH, Liu J, Liu T, You LP, Li XG |
549 - 554 |
Selective growth of ZnO nanoneedles on Si substrates by metalorganic chemical vapor deposition Tak Y, Yong KJ, Park C |
555 - 560 |
Large-area synthesis of single-crystal boehmite nanobelts with high luminescent properties Gao P, Xie Y, Chen Y, Ye LN, Guo QX |
561 - 565 |
Highly aligned ZnS nanorods grown by plasma-assisted metalorganic chemical vapor deposition Feng QJ, Shen DZ, Zhang JY, Liang HW, Zhao DX, Lu YM, Fan XW |
566 - 571 |
Catalytic growth of aluminum nitride whiskers by a modified carbothermal reduction and nitridation method Jung WS, Joo HU |
572 - 578 |
Growth characteristics of ultra-thin epitaxial CaxMg1-xF2 alloys on Si(111) substrates Maeda M, Matsudo N, Watanabe S, Tsutsui K |
579 - 585 |
Effect of 2-methoxyethanol on structure and dielectrical properties of (Pb0.25Ba0.15Sr0.6)TiO3 thin films by modified sol-gel technique Sun XH, Sun CL, Xu S, Li MY, Zhao XZ |
586 - 594 |
The effect of deposition temperature and RF power on the electrical and physical properties of the MgTiO3 thin films Huang CL, Chen YB |
595 - 599 |
Preparation and characterization of BiFeO3 thin films grown on LaNiO3-coated SrTiO3 substrate by chemical solution deposition Li YW, Sun JL, Chen J, Meng XJ, Chu JH |
600 - 605 |
Low-temperature solid-phase synthesis of pure CdTiO3 submicrocrystals using CdO2 nanoparticles as a precursor Zhang YC, Wang GL, Hu XY, Zhou WD |
606 - 612 |
Diffusion of phosphorus and arsenic using ampoule-tube method on undoped ZnO thin films and electrical and optical properties of P-type ZnO thin films So SJ, Park CB |
613 - 619 |
Dielectric properties and high tunability of (100)- and (110)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition Tang XG, Xiong HF, Jiang LL, Chan HLW |
620 - 626 |
Light emission from as-prepared and oxidized Si nanowires with diameters of 5-15 nm Zhang ZY, Wu XL, Shen JC, Yang LW, Shi Y, Chu PK, Siu GG |
627 - 632 |
Preferred orientation controlling of PZT (52-48) thin films prepared by sol-gel process Chen Z, Yang CT, Li B, Sun MX, Yang BC |
633 - 641 |
Effect of NaOH(aq) treatment on the phase transformation and morphology of calcium phosphate deposited by an electrolytic method Shih WJ, Chen YH, Wang SH, Li WL, Hon MH, Wang MC |
642 - 648 |
Fabrication of CdS@TiO2 coaxial composite nanocables arrays by liquid-phase deposition Hsu MC, Leu IC, Sun YM, Hon MH |
649 - 660 |
Studies on acenaphthene (C12H10) single crystals grown by vertical Bridgman technique Babu RR, Balamurugan N, Vijayan N, Gopalakrishnan R, Bhagavannarayana G, Ramasamy P |
661 - 669 |
Crystal growth of CaMn1-xMoxO3 perovskites by the floating-zone technique (0 <= x <= 0.15) Miclau M, Grebille D, Martin C |
670 - 680 |
Differential thermal analysis and solution growth of intermetallic compounds Janssen Y, Angst M, Dennis KW, McCallum RW, Canfield PC |
681 - 691 |
Beyond Archimedean solids: Star polyhedral gold nanocrystals Burt JL, Elechiguerra JL, Reyes-Gasga J, Montejano-Carrizales JM, Jose-Yacaman M |