Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (25 articles)

483 - 486	Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water Nishiyama H, Miura H, Yasui K, Inoue Y
487 - 489	Ultra-fast crystallization due to confinement Grossier R, Magnaldo A, Veesler S
490 - 494	In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy Wu JJ, Okuura K, Okumura K, Miyake H, Hiramatsu K, Chen ZT, Egawa T
495 - 501	Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace Su WJ, Zuo R, Mazaev K, Kalaev V
502 - 506	Characterization of (In1-xAlx)(2)S-3 thin films grown by co-evaporation Couzinie-Devy F, Arzel L, Barreau N, Guillot-Deudon C, Harel S, Lafond A, Kessler J
507 - 513	Characterization of detector-grade CdZnTe crystals grown by traveling heater method (THM.) Awadalla SA, Mackenzie J, Chen H, Redden B, Bindley G, Duff MC, Burger A, Groza M, Buliga V, Bradley JP, Dai ZR, Teslich N, Black DR
514 - 519	Effect of reactor pressure on catalyst composition and growth of GaSb nanowires Weng XJ, Burke RA, Dickey EC, Redwing JM
520 - 526	A study of control growth of three-dimensional nanowire networks of tungsten oxides: From aligned nanowires through hybrid nanostructures to 3D networks Li ZL, Liu F, Xu NS, Chen J, Deng SZ
527 - 531	Evolution of resonant Raman scattering spectra of ZnO crystallites upon post-growth thermal annealing Liu HF, Chua SJ, Hu GX, Gong H
532 - 541	Impact of the H-2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si Hartmann JM, Abbadie A, Barnes JP, Fedeli JM, Billon T, Vivien L
542 - 547	Growth and characterization of 1H-Imidazolinium Hydrogen L-tartrate single crystals Srinivasan TP, Indirajith R, Gopalakrishnan R
548 - 554	A unified interpretation of metastable zone widths and induction times measured for seeded solutions Kubota N
555 - 562	Computational simulations of Ribbon-Growth on substrate for photovoltaic silicon wafer Jeong HM, Chung HS, Lee TW
563 - 567	First evidence of crystalline KHSO4:Mn grown by an aqueous solution method and the investigation of the effect of ionizing radiation exposure Ayta WEF, Dantas NO, Silva ACA, Cano NF
568 - 572	Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method Shi YY, Yang Z, Cao HT, Liu ZM
573 - 579	Stabilities of crystal faces of anhydrite (CaSO4) compared by AFM observation of facet formation processes in aqueous solutions Shindo H, Igarashi T, Karino W, Seo A, Yamanobe-Hada M, Haga M
580 - 586	Structural and magnetic properties of Co68Fe24Zr8/Al2O3 multilayers Lidbaum H, Raanaei H, Papaioannou ET, Leifer K, Hjorvarsson B
587 - 594	Molecular precursor-mediated tuning of gold mesostructures: Synthesis and SERRS studies Mathew A, Sajanlal PR, Pradeep T
595 - 600	Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ, Hageman PR
601 - 606	Impact of Lu/Gd ratio and activator concentration on structure and scintillation properties of LGSO:Ce crystals Sidletskiy O, Bondar V, Grinyov B, Kurtsev D, Baumer V, Belikov K, Katrunov K, Starzhinsky N, Tarasenko O, Tarasova V, Zelenskaya O
607 - 610	Small angle grain boundary Ge films on biaxial CaF2/glass substrate Gaire C, Clemmer PC, Li HF, Parker TC, Snow P, Bhat I, Lee S, Wang GC, Lu TM
611 - 616	Co-crystallization of trace amounts of M2+ ions with ZnSeO4 center dot 6H(2)O at 25 degrees C Smolik M, Kowalik A
617 - 620	Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate Li YW, Shen YD, Yue FY, Hu ZG, Ma XM, Chu JH
621 - 623	Layer-by-layer growth of SrFeO3-delta thin films on atomically flat single-terminated SrRuO3/SrTiO3 (111) surfaces Chang J, Lee JW, Kim SK
624 - 627	Elimination of rotation domains in ZnO thin films on c-plane Al2O3 substrates Trautnitz T, Sorgenfrei R, Fiederle M