Advanced Materials

Advanced Materials, Vol.28, No.20 Entire volume, number list

ISSN: 0935-9648 (Print)

In this Issue (12 articles)

3801 - 3801	Metal Oxide Heterointerfaces in Hybrid Electronic Platforms McLachlan MA, Ratcliff EL
3802 - 3813	The Future of Using Earth-Abundant Elements in Counter Electrodes for Dye-Sensitized Solar Cells Briscoe J, Dunn S
3814 - 3830	Electronic Structure and Properties of Organic Bulk-Heterojunction Interfaces Street RA
3831 - 3892	Recent Developments in p-Type Oxide Semiconductor Materials and Devices Wang ZW, Nayak PK, Caraveo-Frescas JA, Alshareef HN
3893 - 3921	Surface Structure Modification of ZnO and the Impact on Electronic Properties Hewlett RM, McLachlan MA
3922 - 3922	A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors Zhang WM, Han Y, Zhu XX, Fei ZP, Feng Y, Treat ND, Faber H, Stingelin N, McCulloch I, Anthopoulos TD, Heeney M
3928 - 3928	Comparison of the Impact of Zinc Vacancies on Charge Separation and Charge Transfer at ZnO/Sexithienyl and ZnO/Fullerene Interfaces Li H, Bredas JL
3937 - 3937	Thermal and Environmental Stability of Semi-Transparent Perovskite Solar Cells for Tandems Enabled by a Solution-Processed Nanoparticle Buffer Layer and Sputtered ITO Electrode Bush KA, Bailie CD, Chen Y, Bowring AR, Wang W, Ma W, Leijtens T, Moghadam F, McGehee MD
3944 - 3944	Interfacial Characteristics of Efficient Bulk Heterojunction Solar Cells Fabricated on MoOx Anode Interlayers Jasieniak JJ, Treat ND, McNeill CR, de Villers BJT, Della Gaspera E, Chabinyc ML
3952 - 3952	Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants Schiessl SP, Faber H, Lin YH, Rossbauer S, Wang QX, Zhao K, Amassian A, Zaumseil J, Anthopoulos TD
3960 - 3960	Hybridization-Induced Carrier Localization at the C-60/ZnO Interface Kelly LL, Racke DA, Kim H, Ndione P, Sigdel AK, Berry JJ, Graham S, Nordlund D, Monti OLA
3966 - 3966	Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells Lee YH, Luo JS, Son MK, Gao P, Cho KT, Seo J, Zakeeruddin SM, Gratzel M, Nazeeruddin MK