Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.7, No.2 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (24 articles)

F5 - F7	Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping Liu PT, Chen CW, Chang TC, Tseng TY
F8 - F10	Sealing of porous low-k dielectrics - Ellipsometric porosimetry study of UV-O-3 oxidized SiOxCy films Whelan CM, Le QT, Cecchet F, Satta A, Pireaux JJ, Rudolf P, Maex K
H1 - H4	High-temperature spray pyrolysis of Y2O3 : Eu3+ red phosphor Shimomura Y, Kijima N
H5 - H8	Electrochromic mechanism of IrO2 prepared by pulsed anodic electrodeposition Jung YW, Lee J, Tak Y
H9 - H11	Fluorescence switching based on the redox reaction of quinones induced by complexation with rare-earth metals Kamimura T, Nishiumi T, Higuchi M, Yamamoto K
J1 - J3	Characterization of Ni-doped BST thin films on LSCO buffer layers prepared by pulsed laser deposition Kim HS, Lim MH, Kim HG, Kim ID
J4 - J8	Morphology and phase transformation at a solder joint in a solid-state reaction Chang TC, Hon MH, Wang MC
A23 - A26	Overcharge protection for rechargeable lithium batteries using electroactive polymers Chen GY, Richardson TJ
A27 - A29	Lithium insertion/removal mechanism of LiCoVO4 in lithium-ion cells Shirakawa J, Nakayama M, Ikuta H, Uchimoto Y, Wakihara M
A30 - A32	Li conductivity in LixMPO4 (M = Mn, Fe, Co, Ni) olivine materials Morgan D, Van der Ven A, Ceder G
A33 - A36	Interfacial capacitance and electronic conductance of activated carbon double-layer electrodes Hahn M, Baertschi M, Barbieri O, Sauter JC, Kotz R, Gallay R
C17 - C19	Self-aligned deposition process for ultrathin electroless barriers and copper films on low-k dielectric films Chen GS, Chen ST, Louh RF, Yang TJ, Lin CK
C20 - C24	Effect of additives on hydrogen evolution and absorption during Zn electrodeposition investigated by EQCM Song KD, Kim KB, Han SH, Lee H
E11 - E13	In situ observation of high-temperature LaMnO3 surfaces Ashida T, Katsumata T
F11 - F14	Characterization of LSCO/Ir and LSCO/Ru structure as diffusion barrier layers for highly integrated memory devices Kim ID, Han KY, Kim HG
G21 - G24	Comparison of interface state density characterization methods for SiO2/4H-SiC MOS diodes LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F
G25 - G27	Reduction of polysilicon gate depletion effect in NMOS devices using laser thermal processing Chong YF, Gossmann HJL, Pey KL, Thompson MO, Wee ATS, Tung CH
G28 - G30	Measurement of adhesion strength in copper interconnection layers Hara T, Uchida M, Fujimoto M, Doy TK, Balakumar S, Babu N
G31 - G33	Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain Zan HW, Chang TC, Shih PS, Peng DZ, Kuo PY, Huang TY, Chang CY, Liu PT
G34 - G36	Properties of (Ga, Mn)N with and without detectable second phases Thaler GT, Frazier RM, Stapleton J, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM
G37 - G39	Symmetric gate-overlapped LDD poly-Si TFTs with selective and isotropic deposited Ni sub-gate Chen BT, Tseng CH, Cheng HC, Chao CW, Chang TK, Lu JH, Chin A
G40 - G43	Impact of abrasive particles on the material removal rate in CMP - A microcontact perspective Jeng YR, Huang PY
G44 - G46	Ferromagnetic AlGaCrP films by ion implantation Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM
H12 - H14	Carbon dioxide gas sensor suitable for in situ monitoring Imanaka N, Oda A, Tamura S, Adachi G, Maekawa T, Tsumeishi T, Ishikawa H