Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.6, No.3 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (17 articles)

B9 - B11	Anion-exchange inhibition of filiform corrosion on organic coated AA2024-T3 aluminum alloy by hydrotalcite-like pigments Williams G, McMurray HN
A47 - A49	Fast lithium-ion conducting glass-ceramics in the system Li2S-SiS2-P2S5 Hayashi A, Ishikawa Y, Hama S, Minami T, Tatsumisago M
A50 - A52	Direct X-ray diffraction evidence for imidazolium intercalation into graphite from an ionic liquid Sutto TE, Trulove PC, De Long HC
A53 - A55	Lithium iron(II) phospho-olivines prepared by a novel carbothermal reduction method Barker J, Saidi MY, Swoyer JL
A56 - A58	Preparation and characterization of multiwalled carbon nanotubes grown directly onto a conducting support Luo Y, Vander Wal R, Hall LJ, Scherson DA
B12 - B14	Self-organized porous titanium oxide prepared in H2SO4/HF electrolytes Beranek R, Hildebrand H, Schmuki P
B15 - B18	Electrodegradation of chlorofluorocarbons 11 and 113 at small concentrations in closed cells Cabot PL, Segarra L, Casado J
C33 - C37	Real time observation by atomic force microscopy of spontaneous recrystallization at room temperature in electrodeposited copper metallization Buckley DN, Ahmed S
C38 - C41	Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating Wang Z, Ida T, Sakaue H, Shingubara S, Takahagi T
C42 - C46	Modeling pattern density dependent bump formation in copper electrochemical deposition Im YH, Bloomfield MO, Sen S, Cale TS
C47 - C50	Silicon texturing in alkaline media conducted under extreme negative potentials Ein-Eli Y, Starosvetsky D
C51 - C52	Selective copper deposition on barrier layer Ta and TaN in the presence of a copper seed layer Liu CY, Bard AJ
G31 - G33	Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs Luo B, Kim J, Ren F, Baca AG, Briggs RD, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R
G34 - G36	Nature of planar defects in ion-implanted GaN Wang YG, Zou J, Kucheyev SO, Williams JS, Jagadish C, Li G
G37 - G40	Electrical characterization of impurity-free disordered p-type GaAs Deenapanray PNK, Coleman VA, Jagadish C
G41 - G44	p(+)/n ultrashallow junctions in Si1-xGex formed by molecular beam epitaxy Thompson PE, Bennett J
G45 - G47	Formation of tungsten oxide defects during tungsten CMP Jeong JY, Lee WG