Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.14, No.5 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (35 articles)

F5 - F8	CO2 Photoreduction in the Liquid Phase over Pd-Supported on TiO2 Nanotube and Bismuth Titanate Photocatalysts Raja KS, Smith YR, Kondamudi N, Manivannan A, Misra M, Subramanian V
A61 - A63	Improved Initial Performance of Si Nanoparticles by Surface Oxide Reduction for Lithium-Ion Battery Application Xun S, Song X, Grass ME, Roseguo DK, Liu Z, Battaglia VS, Liu G
A64 - A66	Activated Lithium-Metal-Oxides as Catalytic Electrodes for Li-O-2 Cells Trahey L, Johnson CS, Vaughey JT, Kang SH, Hardwick LJ, Freunberger SA, Bruce PG, Thackeray MM
A67 - A69	High-Performance Oxygen Reduction Catalyst Using Carbon-Supported La-Mn-Based Perovskite-Type Oxide Yuasa M, Shimanoe K, Teraoka Y, Yamazoe N
A70 - A74	Method Development to Evaluate the Oxygen Reduction Activity of High-Surface-Area Catalysts for Li-Air Batteries Lu YC, Gasteiger HA, Shao-Horn Y
A75 - A78	Electrochemical Na-Deintercalation from NaVO2 Didier C, Guignard M, Denage C, Szajwaj O, Ito S, Saadoune I, Darriet J, Delmas C
A79 - A82	Molten Salt Synthesis and Its Electrochemical Characterization of Co3O4 for Lithium Batteries Reddy MV, Beichen Z, Nicholette LJ, Kaimeng Z, Chowdari BVR
B47 - B49	Model- and Theory-Based Evaluation of Pt Dissolution for Supported Pt Nanoparticle Distributions under Potential Cycling Rinaldo SG, Lee W, Stumper J, Eikerling M
D45 - D47	Modification of Porous Silicon Formation by Varying the End of Range of Ion Irradiation Ow YS, Liang HD, Azimi S, Breese MBH
D48 - D51	Texture and Grain Size Investigation in the Copper Plated Through-Silicon via for Three-Dimensional Chip Stacking Using Electron Backscattering Diffraction Kadota H, Kanno R, Ito M, Onuki J
D52 - D56	MSA as a Supporting Electrolyte in Copper Electroplating for Filling of Damascene Trenches and Through Silicon Vias Cho SK, Kim MJ, Kim JJ
D57 - D61	Atomic Layer Deposition of RuAlO Thin Films as a Diffusion Barrier for Seedless Cu Interconnects Cheon T, Choi SH, Kim SH, Kang DH
E15 - E17	Electrochemical Fabrication of Anodic Aluminum Oxide Films with Encapsulated Silver Nanoparticles as Plasmonic Photoconductors Lau BC, Liu CY, Lin HY, Huang CH, Chui HC, Tzeng Y
E18 - E20	Pseudo-Hexagonal Composite Twins in Pulse Electroplated Copper Lin YW, Kuo JC
G17 - G19	The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics Jung HS, Jang JH, Cho DY, Jeon SH, Kim HK, Lee SY, Hwang CS
G20 - G22	Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma Xie Q, Deduytsche D, Schaekers M, Caymax M, Delabie A, Qu XP, Detavernier C
G23 - G26	Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films Park TJ, Sivasubramani P, Coss BE, Lee B, Wallace RM, Kim J, Rousseau M, Liu XY, Li HZ, Lehn JS, Hong DW, Shenai D
G27 - G30	TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer Xie Q, Musschoot J, Schaekers M, Caymax M, Delabie A, Lin D, Qu XP, Jiang YL, Van den Berghe S, Detavernier C
J19 - J21	Integrated Full-Bit Shift Register by Low-Temperature Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Jamshidi-Roudbari A, Khan SA, Hatalis MK
K25 - K27	Extremely High Surface Area Metallurgical-Grade Porous Silicon Powder Prepared by Metal-Assisted Etching Loni A, Barwick D, Batchelor L, Tunbridge J, Han Y, Li ZY, Canham LT
K28 - K31	Enhanced Stability of Carbon Nanotube Transparent Conductive Film with Sol-Gel Silica Layer Jeon J, Il Lee T, Choi JH, Oh HS, Kang JY, Chae SS, Baik HK, Lee W, Myoung JM
H181 - H183	Atomic Layer Deposition of p-Type Phosphorus-Doped Zinc Oxide Films Using Diethylzinc, Ozone and Trimethylphosphite Yuan H, Luo B, Campbell SA, Gladfelter WL
H184 - H186	Direct Observation of Heat Transport in Plural AlN Films Using Thermal Imaging and Transient Thermal Reflectance Method Lee T, Burzo MG, Komarov PL, Raad PE, Kim MJ
H187 - H190	Thermal Stability of Copper Contact Metallization Using Ru-Containing Liner Seo SC, Yang CC, Hu CK, Kerber A, Fan S, Horak D, Canaperi D, Rao SP, Haran B, Doris B
H191 - H193	High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal Lee YJ, Lu YL, Mu ZC, Hsueh FK, Chao TS, Wu CY
H194 - H196	Impact of Negative-Bias-Temperature-Instability on Channel Bulk of Polysilicon TFT by Gated PIN Diode Analysis Huang CS, Liu PT
H197 - H200	Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels Shao LJ, Nomura K, Kamiya T, Hosono H
H201 - H204	Effect of Pad Surface Micro-Texture on Coefficient of Friction and Removal Rate during Copper CMP Process Liao X, Zhuang Y, Borucki LJ, Theng S, Wei X, Ashizawa T, Philipossian A
H205 - H207	Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications Lim W, Jeong JH, Lee HB, Lee JH, Hur SB, Ryu JK, Kim KS, Kim TH, Song SY, Hur WG, Kim ST, Pearton SJ
H208 - H211	Development of a Nondestructive Method Utilizing X-ray Diffraction for the Evaluation of Grain Size Distributions of Cu Interconnects Inami T, Onuki J, Isshiki M
H212 - H214	Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization Zhang XG, Guo HX, Lin HY, Ivana, Gong XA, Zhou QA, Lin YR, Ko CH, Wann CH, Yeo YC
H215 - H217	Thermal Behavior of Sapphire-Based InGaN Light-Emitting Diodes with Cap-Shaped Copper-Diamond Substrates Horng RH, Hu AL, Lin RC, Peng KC, Chiang YC
H218 - H221	Surface Modification of Oxide Nanowires by Nitrogen Plasma Lim T, Lee S, Suh M, Ju S
H222 - H224	Improved Performance of Near-Ultraviolet Light Emitting Diodes on Selectively Etched GaN Templates Tsai TY, Wuu DS, Tu JH, Hung MT, Huang SC, Huang SY, Horng RH
H225 - H228	Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr0.52Ti0.48)O-3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory Bourim E, Park S, Liu X, Biju KP, Hwang H, Ignatiev A