Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.11, No.7 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (32 articles)

A16 - A18	The synthesis of hollow spherical Li4Ti5O12 by macroemulsion method and its application in Li-ion batteries Huang JJ, Jiang ZY
C37 - C40	High-efficiency conversion of sputtered Ti thin films into TiO2 nanotubular layers Berger S, Macak JM, Kunze J, Schmuki P
C41 - C45	Characterization of phases in duplex stainless steel by magnetic force microscopy/scanning kelvin probe force microscopy Sathirachinda N, Gubner R, Pan J, Kivisakk U
E15 - E19	The role of the characteristics of p-Si BDD anodes on the efficiency of wastewater electro-oxidation processes Canizares P, Saez C, Martinez F, Rodrigo MA
E20 - E23	Investigation of formic acid oxidation on Ti/IrO2 electrodes using isotope labeling and online mass spectrometry Fierro S, Nagel T, Baltruschat H, Comninellis C
G23 - G26	Atomic layer deposition of silicon oxide thin films by alternating exposures to Si2Cl6 and O-3 Lee SW, Park K, Han B, Son SH, Rha SK, Park CO, Lee WJ
G27 - G29	Controlling the composition of doped materials by ALD: A case study for Al-doped TiO2 films Kim SK, Choi GJ, Hwang CS
G30 - G32	Effects of Ni substitution on structural, dielectrical, and ferroelectric properties of chemical-solution-deposited multiferroic BiFeO3 films Singh SK, Palai R, Maruyama K, Ishiwara H
G33 - G36	Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate Eom D, Hwang CS, Kim HJ, Cho MH, Chung KB
G37 - G39	Polysilicon-oxide-nitride-oxide-silicon-type flash memory using an Y2O3 film as a charge trapping layer Pan TM, Yeh WW
J61 - J63	Effects of ZnO addition on doping of Eu3+ ions into Y2O3 Tanaka M, Miyako Y, Nishigaki K, Kurita A, Hanzawa H
J64 - J67	Preparation of fine-sized SrSi2O2-delta N2+2/3 delta : Eu2+ phosphor by spray pyrolysis and its luminescent characteristics Jung KY, Seo JH
K69 - K72	Electrochemical synthesis and nanoscale photoluminescence of poly(3-butylthiophene) nanowire Park DH, Kim M, Kim MS, Kim DC, Song H, Kim J, Joo J
A109 - A111	UV treatment effect on TiO2 electrodes in dye-sensitized solar cells with N719 sensitizer investigated by infrared absorption spectroscopy Hirose F, Kuribayashi K, Suzuki T, Narita Y, Kimura Y, Niwano M
A112 - A115	Crystalline Ag nanocluster-incorporated RuO2 as an electrode material for thin-film micropseudocapacitors Ahn HJ, Sung YE, Kim WB, Seong TY
A119 - A124	Transmission electron microscope studies of LiNi1/3Mn1/3Co1/3O2 before and after long-term aging at 70 degrees C Gabrisch H, Yi TH, Yazami R
B109 - B112	Catalytic activity of zirconium oxynitride prepared by reactive sputtering for ORR in sulfuric acid Maekawa Y, Ishihara A, Kim JH, Mitsushima S, Ota KI
B113 - B116	Degradation mitigation in polymer electrolyte membranes using cerium oxide as a regenerative free-radical scavenger Trogadas P, Parrondo J, Ramani V
B117 - B121	Development and evaluation of a cathode-supported SOFC having a honeycomb structure Yamaguchi T, Shimizu S, Suzuki T, Fujishiro Y, Awano M
B122 - B126	Estimated rate constants for CO poisoning of high-performance Pt/Ru-C anodes Nwoga TT, Van Zee JW
H165 - H168	Dielectric hafnium oxide improved by supercritical carbon dioxide fluid treatment for pentacene thin-film transistors Liu PT, Chou YM, Yang PY
H169 - H172	Wet mesa etching process in InGaN-based light emitting diodes Yang CC, Lin CF, Jiang RH, Liu HC, Lin CM, Chang CY, Wuu DS, Kuo HC, Wang SC
H173 - H175	Preparation of V2O3 thin films by the reduction of VO2 in a very low pressure Yun SJ, Chae BG, Lim JW, Noh JS, Kim HT
H176 - H178	Enhancement of photosensitivity in CdS thin films incorporated by hydrogen Hur SG, Kim ET, Lee JH, Kim GH, Yoon SG
H179 - H181	The impact of boron halo on phosphorus junction formation and stability Yeong SH, Colombeau B, Mok KRC, Benistant F, Chan L, Srinivasan MP
H182 - H184	Impact of carbon incorporation on the effective work function of WN and TaN metal gate electrodes Alshareef HN, Quevedo-Lopez M, Wen HC, Huffman C, El-Bouanani M, Gnade BE
H185 - H188	Ni/Au ohmic contacts to p-type N-doped ZnO Lu YF, Ye ZZ, Zeng YJ, Zhu LP, Zhao BH
H189 - H192	Effects of an undoped Si1-xCx buffer layer on performance of Si nanocrystal light-emitting diodes Huh C, Cho KS, Kim KH, Hong J, Ko H, Kim W, Sung GY
H193 - H196	InAs channel-based quantum well transistors for high-speed and low-voltage digital applications Kuo CI, Hsu HT, Chang EY
H197 - H201	Mixed organic/inorganic abrasive particles during oxide CMP Armini S, Whelan CM, Moinpour M, Maex K
H202 - H203	Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer Lin CC, Chang TC, Tu CH, Chen WR, Hu CW, Sze SM, Chang CY, Tseng TY
H204 - H206	High-quality HfO2 formation using Zr reduced high-purity TEMAH Miya H, Asai M, Hirahara K, Kinoshita Y, Hirose F