Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.3, No.7 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (17 articles)

301 - 304	Lithium diffusion in layered LixCoO2 Van der Ven A, Ceder G
305 - 308	Importance of heat transfer by radiation in Li-ion batteries during thermal abuse Hatchard TD, MacNeil DD, Stevens DA, Christensen L, Dahn JR
309 - 311	Electrochemistry of the layered manganese dioxides: A(x)Mn(1-y)(Co, Ni, Fe)yO(2) (A = Li, K) rate effects Zhang F, Whittingham MS
312 - 315	Electrochemical properties of Li-Zn alloy electrodes prepared by kinetically controlled vapor deposition for lithium batteries Shi Z, Liu ML, Gole JL
316 - 318	A high-rate, high-capacity, nanostructured tin oxide electrode Li NC, Martin CR, Scrosati B
319 - 320	In situ Raman spectroscopy on an operating AA Zn-MnO2 battery under high discharge currents Cai WB, Shi QF, Mansuetto MF, Scherson DA
321 - 324	Anion and cation transference numbers determined by electrophoretic NMR of polymer electrolytes sum to unity Walls HJ, Zawodzinski TA
325 - 326	Activation of boron-doped diamond with IrO2 clusters Duo I, Michaud PA, Haenni W, Perret A, Comninellis C
327 - 329	Divalent magnesium ionic conduction in Mg1-2x(Zr1-xNbx)(4)P6O24 (x=0-0.4) solid solutions Imanaka N, Okazaki Y, Adachi G
330 - 332	Proton exchange during the redox switching of polyaniline film electrodes Ybarra G, Moina C, Florit MI, Posadas D
333 - 334	Common-base operation of GaN bipolar junction transistors Cao XA, Dang GT, Zhang AP, Ren F, Abernathy CR, Pearton SJ, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Chu SNG
335 - 337	Structural evolution of Pd/GaN(0001) films during postannealing Kim CC, Kim WH, Je JH, Kim DW, Baik HK, Lee SM
338 - 339	Microporous silicon as a light trapping layer for photodiodes Zheng JP, Charbel PT, Kwok HS
340 - 342	Photoresist patterning and ion implantation degradation effects on flash memory device yield Cha CL, Ngo Q, Chor EF, See AK, Lee TJ
343 - 345	Impact of cooling rate in annealing for iron gettering in p/p(+) silicon device wafers Horikawa M
346 - 349	Initial stage of the ultrathin oxide growth in water vapor on Si(100) surface Kim YB, Tuominen M, Raaijmakers I, de Blank R, Wilhelm R, Haukka S
350 - 351	Orange and red emitting long-lasting phosphors MO : Eu3+ (M = Ca, Sr, Ba) Fu J